BLF245C RF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF245C is a VDMOS transistor designed for large signal amplifier applications in the VHF frequency range. PACKAGE STYLE .400 8L FLG C D A B F U LL R G FEATURES INCLUDE: O F E .1925 • PG = 16 dB Typical at 175 MHz • 30:1 Load VSWR Capability • Omnigold™ metalization system .125 H 4 x .060 R I J K N L M MAXIMUM RATINGS D IM M IN IM U M M A X IM U M inches / m m inches / m m .030 / 0.76 A ID 6.0 A VDS 65 V D ±20 V F .380 / 9.65 .390 / 9.91 VGS G .735 / 18.67 .765 / 19.43 H .645 / 16.38 .655 / 16.64 PDISS 68 W @ TC = 25 °C I .895 / 22.73 .905 / 22.99 J .420 / 10.67 .430 / 10.92 K .003 / 0.08 .007 / 0.18 L .120 / 3.05 .130 / 3.30 M .159 / 4.04 .175 / 4.45 .395 / 10.03 .405 / 10.29 B .115 / 2.92 TSTG -65 °C to +200 °C θJC 1.8 °C/W CHARACTERISTICS SYMBOL .065 / 1.65 .075 / 1.91 .130 / 3.30 E -65 °C to +150 °C TJ .125 / 3.18 .360 / 9.14 C .280 / 7.11 N O COMMON SOURCE NONE TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVDSS ID = 10 mA 65 V IDSS VDS = 28 V VGS = 0 V 2.0 mA IGSS VDS = 0 V VGS = ±20 V 1.0 µA VGS(th) VDS = 10 V ID = 10 mA 2.0 4.5 V gfs VDS = 10 V ID = 1.5 A 1.2 Ciss Coss Crss VDS = 28 V VGS = 0 V f = 1.0 MHz PG ηD VDS = 28 V IDQ = 25 mA Pout = 30 W f = 150 MHz ψ VSWR = 30:1 AT ALL PHASE ANGLES 13 50 1.9 S 125 75 7.0 pF 16 60 dB % NO DEGRADATION IN OUTPUT POWER A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1