LT1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B C 45° ØA ØD DESCRIPTION: E The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F H G MAXIMUM RATINGS 200 mA IC DIM PDISS inches / mm inches / mm .200 / 5.080 A 20 V VCE MAXIMUM MINIMUM O 2.5 W @ TC = 50 C B .029 / 0.740 .045 / 1.140 C .028 / 0.720 .034 / 0.860 D .335 / 8.510 .370 / 9.370 E .305 / 7.750 .335 / 8.500 .240 / 6.100 TJ -65 °C to +200 °C F TSTG -65 °C to +200 °C H θJC 70 °C/W .260 / 6.600 .500 / 12.700 G .016 / 0.407 .020 / 0.508 1 = EMITTER 2 = BASE 3 = COLLECTOR(CASE) NONE CHARACTERISTICS SYMBOL TA = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 5.0 mA 20 V BVCBO IC = 1.0 mA 40 V BVEBO IE = 100 µA 3.5 V ICBO VCB = 10 V hFE VCE = 5.0 V IC = 50 mA VCE(SAT) IC = 50 mA IB = 5.0 mA ft VCE = 14 V IC = 90 mA Ccb VCB = 10 V NF VCE = 8.0 V IC = 50 mA f = 300 MHz 2.5 dB GUmax VCE = 14 V IC = 90 mA f = 300 MHz 15 dB 70 f = 300 MHz µA 300 --- 500 mV 3.0 GHz f = 1.0 MHz 1.6 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 Specifications are subject to change without notice. 50 pF REV. A 1/1