HD-6402/883 S E M I C O N D U C T O R CMOS Universal Asynchronous Receiver Transmitter (UART) March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HD-6402/883 is a CMOS UART for interfacing computers or microprocessors to an asynchronous serial data channel. The receiver converts serial start, data, parity and stop bits. The transmitter converts parallel data into serial form and automatically adds start, parity and stop bits. The data word length can be 5, 6, 7 or 8 bits. Parity may be odd or even. Parity checking and generation can be inhibited. The stop bits may be one or two or one and one-half when transmitting 5-bit code. • 8.0MHz Operating Frequency (HD-6402/883B) • 2.0MHz Operating Frequency (HD-6402/883R) • Low Power CMOS Design • Programmable Word Length, Stop Bits and Parity • Automatic Data Formatting and Status Generation • Compatible with Industry Standard UARTs • Single +5V Power Supply • CMOS/TTL Compatible Inputs The HD-6402/883 can be used in a wide range of applications including modems, printers, peripherals and remote data acquisition systems. Utilizing the Harris advanced scaled SAJI IV CMOS process permits operation clock frequencies up to 8.0MHz (500K Baud). Power requirements, by comparison, are reduced from 300mW to 10mW. Status logic increases flexibility and simplifies the user interface. Ordering Information PACKAGE CERDIP TEMPERATURE RANGE -55oC to +125oC 2MHz = 125K BAUD HD1-6402R/883 8MHz = 500K BAUD HD1-6402B/883 PKG. NO. F40.6 Pinout HD-6402/883 (CERDIP) TOP VIEW VCC 1 40 TRC NC 2 39 EPE GND 3 38 CLS1 RRD 4 37 CLS2 RBR8 5 36 SBS RBR7 6 35 PI RBR6 7 34 CRL RBR5 8 33 TBR8 RBR4 9 32 TBR7 RBR3 10 31 TBR6 RBR2 11 30 TBR5 RBR1 12 29 TBR4 PE 13 28 TBR3 FE 14 27 TBR2 OE 15 26 TBR1 SFD 16 25 TRO RRC 17 24 TRE DRR 18 23 TBRL DR 19 22 TBRE RRI 20 21 MR CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1997 5-107 File Number 2953.1 HD-6402/883 Control Definition CONTROL WORD CHARACTER FORMAT CLS 2 CLS 1 PI EPE SBS START BIT DATA BITS PARITY BIT 0 0 0 0 0 1 5 ODD 1 0 0 0 0 1 1 5 ODD 1.5 0 0 0 1 0 1 5 EVEN 1 0 0 0 1 1 1 5 EVEN 1.5 0 0 1 X 0 1 5 NONE 1 0 0 1 X 1 1 5 NONE 1.5 0 1 0 0 0 1 6 ODD 1 0 1 0 0 1 1 6 ODD 2 0 1 0 1 0 1 6 EVEN 1 0 1 0 1 1 1 6 EVEN 2 0 1 1 X 0 1 6 NONE 1 0 1 1 x 1 1 6 NONE 2 1 0 0 0 0 1 7 ODD 1 1 0 0 0 1 1 7 ODD 2 1 0 0 1 0 1 7 EVEN 1 1 0 0 1 1 1 7 EVEN 2 1 0 1 X 0 1 7 NONE 1 1 0 1 x 1 1 7 NONE 2 1 1 0 0 0 1 8 ODD 1 1 1 0 0 1 1 8 ODD 2 1 1 0 1 0 1 8 EVEN 1 1 1 0 1 1 1 8 EVEN 2 1 1 1 X 0 1 8 NONE 1 1 1 1 x 1 1 8 NONE 2 5-108 STOP BITS HD-6402/883 Absolute Maximum Ratings Thermal Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V Input, Output or I/O Voltage Applied. . . . . GND -0.5V to VCC +0.5V Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Typical Derating Factor . . . . . . . . . . . . 1mA/MHz Increase in ICCOP Thermal Resistance θJA θJC CERDIP Package . . . . . . . . . . . . . . . . 50oC/W 12oC/W Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1643 Gates CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range . . . . . . . . . . . . . . . .-55oC to +125oC TABLE 1. HD-6402/883 D.C. ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested D.C. PARAMETER SYMBOL CONDITIONS LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS Logical ‘‘1’’ Input Voltage VIH VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC 2.3 - V Logical ‘‘0’’ Input Voltage VIL VCC = 4.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC - 0.8 V Input Leakage Current IID VIN = GND or VCC, VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC -1.0 1.0 µA Logical ‘‘1’’ Output Voltage VOH IOH = -2.5mA, VCC = 4.5V (Note 1) 1, 2, 3 -55oC ≤ TA ≤ +125oC 3.0 - V Logical ‘‘1’’ Output Voltage VOH IOH = -100µA VCC = 4.5V (Note 1) 1, 2, 3 -55oC ≤ TA ≤ +125oC VCC -0.4 - V Logical ‘‘0’’ Output Voltage VOL IOL = +2.5mA, VCC = 4.5V (Note 1) 1, 2, 3 -55oC ≤ TA ≤ +125oC - 0.4 V Output Leakage Current IO VO = GND or VCC, VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC -1.0 1.0 µA Standby Supply Current ICCSB VIN = GND or VCC; VCC = 5.5V, Output Open 1, 2, 3 -55oC ≤ TA ≤ +125oC - 100 µA TABLE 2. HD-6402/883 A.C. ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested A.C. PARAMETER SYMBOL Clock Frequency (1) fCLOCK Pulse Widths, CRL, DRR, TBRL (2) tPW Pulse Width MR (3) tMR LIMITS HD-6402/883R LIMITS HD-6402/883B (NOTE 1) CONDITIONS GROUP A SUBGROUPS TEMPERATURE MIN MAX MIN MAX UNITS VCC = 4.5V CL = 50pF 9, 10, 11 -55oC ≤ TA ≤ +125oC - 2.0 - 8.0 MHz 9, 10, 11 -55oC ≤ TA ≤ +125oC 150 - 75 - ns 9, 10, 11 -55oC ≤ TA ≤ +125oC 150 - 150 - ns 50 - 20 - ns Input Data Setup Time (4) tSET 9, 10, 11 -55oC ≤ TA ≤ +125oC Input Data Hold Time (5) tHOLD 9, 10, 11 -55oC ≤ TA ≤ +125oC 60 - 20 - ns Output Enable Time (6) tEN 9, 10, 11 -55oC ≤ TA ≤ +125oC - 160 - 35 ns NOTE: 1. Interchanging of force and sense conditions is permitted. 2. Tested with input levels of VIH = 2.76V and VIL = 0.4V. Rise and fall times are driven at 1ns/V. 5-109 HD-6402/883 TABLE 3. HD-6402/883 ELECTRICAL PERFORMANCE SPECIFICATIONS LIMITS A.C. PARAMETER SYMBOL Input Capacitance CIN Output Capacitance CO Operating Supply Current ICCOP CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 TA = +25oC - 25.0 pF 1 TA = +25oC - 25.0 pF 1 -55oC ≤ TA ≤ +125oC - 2.0 mA f = 1Mhz All Measurements are Referenced to Device GND VCC = 5.5V, Clock Freq. = 2MHz, VIN = VCC or GND, Outputs Open NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. These parameters are characterized upon initial design and after major process and/or design changes. TABLE 4. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD SUBGROUPS Initial Test 100%/5004 - Interim Test 100%/5004 1, 7, 9 PDA 100% 1 Final Test 100% 2, 3, 8A, 8B, 10, 11 - 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Samples/5005 1, 7, 9 Group A Group C and D 5-110 HD-6402/883 Burn-In Circuits HD-6402/883 CERDIP DETAIL VCC A VCC R1 C 1 F0 40 A R1 2 VCC 39 R1 R1 3 GND R1 4 GND VCC 38 R1 VCC 37 R1 DETAIL VCC B NOTE: ONE PER BOARD A 5 A 6 A 7 R1 2 3 14 4011 QUAD NAND GATE 8 4 5 A 9 32 A 10 31 6 DIP HD-6402/883 VCC R1 30 GND R1 12 29 VCC R1 13 28 GND 14 27 VCC R1 A 8 11 A B C (NOTE 5) 15 26 GND 16 25 F0 17 24 A 18 23 B 19 22 GND R1 R1 VCC A 7 GND R1 11 9 VCC R1 A 12 10 33 R1 A 13 GND 34 R1 A 1 GND 35 R1 A C VCC 36 F0 R1 20 NOTES: 1. VCC = 5.5V ± 0.5V 2. F0 = 100kHz ± 10% 3. R1 = 47kΩ, 1/4W ± 10% 4. C = 0.01µF minimum 5. One socket per board should not be loaded, but rather have pin 24 go the “C” of the 4011. 5-111 21 (NOTE 5) A GND HD-6402/883 Die Characteristics DIE DIMENSIONS: 126.4 mils x 134.3 mils x 19 mils METALLIZATION: Type: Si-Al Thickness: 10kÅ GLASSIVATION: Type: SiO2 Thickness: 7kÅ - 9kÅ WORST CASE CURRENT DENSITY: 1.42 x 105 A/cm2 - 12kÅ Metallization Mask Layout HD-6402/883 RBR8 RRD GND NC VCC TRC EPE CLS1 CLS2 SBS PI CRL TBR8 RBR7 RBR6 TBR7 RBR5 TBR6 RBR4 TBR5 RBR3 TBR4 RBR2 RBR1 TBR3 PE TBR2 FE TBR OE RO SFD RRC DRR DR RRI MR 5-112 TBRE TBRL TRE