HITACHI 1SS286

1SS286
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching
ADE-208-302A (Z)
Rev. 1
Sep. 1995
Features
• Very low reverse current.
• Detection efficiency is very good.
• Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
Cathode band
Mark
Package Code
1SS286
Green
7
MHD
7
Outline
2
1
Cathode band
1. Cathode
2. Anode
1SS286
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
25
V
Forward current
IF
35
mA
Power dissipation
Pd
150
mW
Junction temperature
Tj
100
°C
Storage temperature
Tstg
–55 to +100
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
VF
—
—
0.6
V
IF = 10mA
Reverse voltage
VR
25
—
—
V
IR = 10µA
Reverse current
IR
—
—
10
nA
VR= 10V
Capacitance
C
—
—
1.2
pF
VR = 0V, f = 1MHz
Capacitance deviation
∆C
—
—
0.1
pF
VR = 0V, f = 1MHz
Forward voltage
deviation
∆VF
—
—
10
mV
IF = 10mA
ESD-Capability
—
10
—
—
V
* C = 200pF, Both forward and
reverse direction 1 pulse.
Notes: 1. Failure criterion; IR ≥ 20µA
2. Each group shall unify a multiple of 4 diodes
Rev.1, Sep. 1995, page 2 of 6
1
1SS286
–1
10
10–2
Forward current I F (A)
–3
10
10 –4
–5
10
–6
10
–7
10
–8
10
–9
10
0
0.2
0.4
0.6
0.8
1.0
Forward voltage VF (V)
Fig.1 Forward current Vs. Forward voltage
Reverse current I R (A)
10
10
–6
–7
–8
10
–9
10
–10
10
0
5
10
20
15
Reverse voltage VR (V)
25
Fig.2 Reverse current Vs. Reverse voltage
Rev.1, Sep. 1995, page 3 of 6
1SS286
1.0
Capacitance C (pF)
f = 1MHz
10
–1
–2
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
Rev.1, Sep. 1995, page 4 of 6
40
1SS286
Package Dimensions
Unit: mm
2.4 Max
26.0 Min
1
φ 0.4
7
φ 2.0
Max
26.0 Min
1 Cathode
2
2 Anode
Cathode band (Green)
HITACHI Code
MHD
JEDEC Code
DO-34
EIAJ Code
—
Weight (g)
0.084
Rev.1, Sep. 1995, page 5 of 6
1SS286
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.1, Sep. 1995, page 6 of 6