HITACHI 2SK2315

2SK2315
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
2.5 V gate drive device can be driven from 3 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
UPAK
3
2 1
4
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SK2315
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
60
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
2
A
4
A
2
A
Drain peak current
I D(pulse)*
Body to drain diode reverse drain current
I DR
1
2
Channel dissipation
Pch*
1
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the alumina ceramic board (12.5 × 20 × 0.7mm)
3. Marking is “TY”
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±5
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current I DSS
—
—
5
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
0.5
—
1.5
V
I D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.4
0.6
Ω
I D = 0.3 A
VGS = 3 V*1
—
0.35
0.45
Ω
ID = 1 A
VGS = 4 V*1
Forward transfer admittance
|yfs|
1.5
1.8
—
S
ID = 1 A
VDS = 10 V*1
Input capacitance
Ciss
—
173
—
pF
VDS = 10 V
Output capacitance
Coss
—
85
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
23
—
pF
f = 1 MHz
Turn-on time
t on
—
21
—
ns
I D = 1 A, RL = 30 Ω
Turn-off time
t off
—
85
—
ns
VGS = 10 V
Note
2
1. Pulse Test
2SK2315
Power vs. Temperature Derating
Maximum Safe Operation Area
5
100 µs
I D (A)
2
0.4
0.5
0.05
0.02
0.01
0
50
100
150
Ambient Temperature
200
0.005
0.2
Typical Output Characteristics
1
(A)
ID
3V
0.5 1
2
5
10 20
50 100 200
V DS (V)
2.5 V
2V
4
3
2
4
6
Drain to Source Voltage
8
10
V DS (V)
Tc = 75 °C
25 °C
–25 °C
2
1
V GS = 1.5 V
0
Ta = 25 °C
1 shot pulse
Ta = 25 °C
Pulse Test
3
2
Operation in
this area is
limited by R DS(on)
5
Drain Current
I D (A)
Drain Current
4
m
Typical Transfer Characteristics
5
10 V
5V
4V
3.5 V
s
10
Drain to Source Voltage
Ta (°C)
m
s
0.2
0.1
=
n
t io
ra
pe
0.8
1
1
O
Drain Current
1.2
PW
C
D
Channel Dissipation Pch** (W)
(** on the almina ceramic board)
1.6
0
V DS = 10 V
Pulse Test
1
2
3
Gate to Source Voltage
4
5
V GS (V)
3
2SK2315
Static Drain to Source State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
R DS(on) ( Ω)
Pulse Test
Ta = 25 °C
0.8
0.6
I D= 2 A
0.4
1A
0.2
0
4
Drain to Source On State Resistance
R DS(on) ( Ω )
1.0
0.5 A
4
8
12
Gate to Source Voltage
16
0.8
I D= 2 A
0.6
VGS = 3 V
1A
0.2
0
–40
VGS = 10 V
2
Ta = 25 °C
Pulse Test
1
VGS = 3 V
0.5
10 V
0.2
0.1
0.2
V GS (V)
Static Drain to Source on State Resistance
vs. Temperature
1.0
0.4
5
0.05
0.1
20
0.5 A
1A
0.5 A
I D= 2 A
0
40
80
120
160
Case Temperature Tc (°C)
0.5
1
Drain Current
2
5
I D (A)
10
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source Saturation Voltage
V DS(on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
5
2
Tc = –25 °C
25 °C
75 °C
1
0.5
V DS = 10 V
Pulse Test
0.2
0.1
0.1
0.2
0.5
1
2
Drain Current I D (A)
5
10
2SK2315
Typical Capacitance vs.
Drain to Source Voltage
100
Coss
Crss
10
VGS = 0
f = 1 MHz
1
0
10
20
30
40
20
12
VDS
40
50
0
Reverse Drain Current I DR (A)
Switching Time t (ns)
50
tf
t d(on)
5
2
0.05 0.1
V GS = 10 V, PW = 2 µs
V DD = 30 V, duty < 1 %
0.2
0.5
Drain Current
1
2
I D (A)
2
4
6
8
Gate Charge Qg (nc)
0
10
5
t d(off)
10
4
V DD = 50 V
25 V
10 V
Reverse Drain Current vs.
Souece to Drain Voltage
100
tr
8
I D= 2 A
20
Switching Characteristics
20
16
60
Drain to Source Voltage V DS (V)
200
VGS
V DD = 50 V
25 V
10 V
80
Gate to Source Voltage
V DS (V)
Ciss
Drain to Source Voltage
Capacitance C (pF)
100
V GS (V)
Dynamic Input Characteristics
1000
5
Pulse Test
4
3
10 V
2
5V
V GS = 0
1
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
V SD (V)
5
Unit: mm
1.5 1.5
3.0
0.44 Max
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
(0.2)
(2.5)
(1.5)
(0.4)
0.53 Max
0.48 Max
1.5 ± 0.1
0.44 Max
2.5 ± 0.1
4.25 Max
φ1
0.8 Min
1.8 Max
0.4
4.5 ± 0.1
UPAK
—
Conforms
0.050 g
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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