HITACHI ECN3067SLV

P3/9
ECN3067
4.Electrical Characteristics
Unless otherwise specified, Vcc=15V,VS=325V
Suffix T: Top arm
B: Bottom Arm
Ta = 25°C
No.
Items
1 Standby Current
2
Symbols Terminal
IS
VS1,VS2
ISB
BU-MU,BV-
MIN.
-
TYP.
15
MAX.
0.25
30
Unit
mA
mA
10
2.5
20
3.5
mA
V
MV,BW-MW
3
4
Output device FVD
5
6
7
8
Turn On Delay
Time
Turn Off Delay
Time
ICC
VFT
VCC
MU,MV,MW
-
VFB
MU,MV,MW
-
2.5
3.5
V
TdONT
MU,MV,MW
-
1.0
2.0
ms
TdONB MU,MV,MW
TdOFFT MU,MV,MW
-
1.0
1.0
2.0
2.0
ms
ms
3.5
-100
1.0
2.5
2.5
-
2.0
3.5
3.5
1.5
-
ms
V
V
V
V
mA
-30
-
-
mA
Condition
Input=“H”
BU-MU,BV-MV,
BW-MW=15V
I=1.5A
PW<5ms
I=1.5A
PW<5ms
I=1.5A
Resistive
Load
9
10 Diode FVD
11
12 Input Voltage
13
14 Input Current
TdOFFB
VFDT
VFDB
VIH
VIL
IIL
15
IIH
16 VB Output Voltage
17 VB Output Current
VB
IB
CB
CB
6.8
50
7.5
-
8.2
-
V
mA
18 Over Current
reference Voltage
19 Fault output on
resistance
20 Vcc Under Voltage Negative Going
21
Reset Hysterisis
22 VBU,BV,BW Under
Negative Going
23 Voltage
Reset Hysterisis
24 Fault reset delay time
25 OC shutdown delay
Vref
RS
0.45
0.5
0.55
V
Ronf
F
-
300
400
W
Note 2
Vuvb
Vrhb
Vuvt
Vrht
tflrs
toc
VCC
9.8
0.1
9.8
0.1
6.5
-
11.4
0.4
11.4
0.4
10
2.0
13.0
0.9
13.0
0.9
20
3.0
V
V
V
V
ms
ms
Note 3
MU,MV,MW
MU,MV,MW
MU,MV,MW
UT,VT,WT,
UB,VB,WB
UT,VT,WT,
UB,VB,WB
VCC
BU-MU,BVMV,BW-MW
F
RS
Note 1. Pull Up Resistance are typically 200kW
Note 2. The equivalent circuit around F terminal is shown
below.
Note 3. Please see item 5.4.
Note 4. Please see item 5.4.
I=1.5A
PW<5ms
Input=0V
Note 1
Input=5V
Note 1
dVLOAD=
0.2V
Note 4
CB
F
PDE-3067-1
P4/9
ECN3067
5. Function
5.1. Truth Table
Terminal
UT,VT,WT,
UB,VB,WB
UT,UB
VT,VB
WT,WB
Input
L
H
UT&UB=L
VT&VB=L
WT&WB=L
Output
ON
OFF
OFF
OFF
OFF
5.2 Timing Chart(Example of Brushless Motor drive)
UT
Top Arm
VT
W T
UB
Bottom Arm
VB
W B
M U
OUTPUT
M V
OUTPUT
M W OUTPUT
5.3 Over Current Operation
This IC detects over current by checking the
VB
Voltage drop at the external resistance RS. When
typ 200kW
the input voltage at RS terminal exceeds the
internal reference voltage (Vref), this IC turns off
the output of all arms circuit and F terminal output
typ 220kW
RS
typ 300W
S
Latch
R
typ
5pF
Vref
becomes “L”. After over current detection, reset is
done when all six inputs are referenced to high level.
Reset signal
RS terminal inner equivalent circuit
In case of not using this function, please connect
this terminal to GL terminal (within 100 W).
PDE-3067-1
P5/9
ECN3067
5.4 Undervoltege Detection
1) When Vcc supply voltage becomes below Vuvb(11.4V typ.), all of the IGBTs shut off and F
terminal output becomes “L”.
2) When between BU-MU, BV-MV or BW-MW voltage become below Vuvt(11.4V typ.), top arm
IGBT of under voltage detected phase shuts off. In this time, F terminal output doesn’t change.
Note 1. When VCC supply voltage becomes lower, driving capability of IGBT also becomes lower.
Accordingly, power dissipation becomes higher and this causes temperature raise of IC.
In case of junction temperature exceeds 135°C, IC may deteriorate or breakdown.
5.5 Definition of switching delay
50%
Input
(UT,UB VT,VB WT,WB)
50%
80%
20%
Output Current
(MU,MV,MW)
Tdon
Tdoff
Input
(UT,UB VT,VB WT,WB)
RS
50%
50%
F
50%
Output
(MU,MV,MW)
50%
50%
tflt
toc
tflrs
PDE-3067-1
P6/9
ECN3067
6.Standard Application
No
ITEMS
1 VB Smoothing Capacitor
2 Boot Strap Capacitor
3 Boot Strap Diode
SYMBOLS UNIT VALUESTOL.
REMARK
Co
Stress Voltage 8V
mF
³ 0.22
Cb
Stress Voltage Vcc
mF
³ 3.3
Db
- Hitachi DFG1C6, Breakdown Voltage : ³ 600V,
DFM1F6
Current : ³1.0A
or equivalent
Trr : £ 200ns
4 Sensing Resistor
Rs
W Note1
5 Load resistor for F terminal
Rf
kW
³ 5.6
6 Resistor of boot strap
Rb
W Note2
Note1. Over-current detection level is determined by the following equation.
Io=Vref / Rs (A)
Note2. Current limiting resistance Rb is prevention over current protection from operation at initial
charge. Rb is about determined by the following equation.
ibpeak=Vref / Rs = VCC / Rb
Rb > ( VCC * Rs ) / Vref * 2
( * 2 shows the margin. Top arms are off state. Ibpeak is one phase only.)
ibpeak : Peak current of the initial charge for Cb
Vref
; Over Current reference Voltage
Cb
Cb
Cb
Db
Db
Db
Rb
Vs
Bw
Bv
Bu
Vs1
Vs2
VCC
Vcc
C
0
VB
Supply
CB
UT
VT
WT
VB
Top Arm
Motor
Driver
Mu
Control IC
Mv
Input
Microprocessor
Mw
buffer
UB
VB
WB
Bottom Arm
Driver
Fault
UV detection
OC protection
F
To microprocessor
power supply
R
GL
RS
GH1
GH2
f
RS
Block Diagram(example for boot strap)
PDE-3067-1
P7/9
ECN3067
7. Pin Assignment
Pin No. Terminal Name
1
MV
2
VS2
3
MW
4
GH2
5
BW
6
BV
7
VCC
8
CB
9
GL
10
F
11
RS
12
WB
Pin No.
13
14
15
16
17
18
19
20
21
22
23
Terminal Name
VB
UB
WT
VT
UT
BU
VS1
Non Connection
Non Connection
MU
GH1
8. Package Outline
ECN3067SLV
(SP-23TE)
ECN3067SLR
(SP-23TFA)
PDE-3067-1
P8/9
ECN3067
9.Package Dimension ( unit: mm )
(1) ECN3067SLV
±0.25
30.18
f3.80
19.81
±0.05
17.78
+0.06
-0.04
±0.33
1.27
+0.09
-0.1
5.08
27.94
4.14
0.70
M
-0.1
±0.25
±0.12
±0.05
3.80
0.25
1.12
0.40
23
1
±0.12
+0.05
±0.19
10.70
±0.13
2-R1.84
17.50
1.55
2.79
4.32
4.50
±0.05
4.29
(2) ECN3067SLR
30.18±0.25
19.81
f3.80±0.05
17.50±0.13
3.80±0.05
1.55
+0.05
-0.1
23
27.94
+0.09
-0.1
0.25 M
9.1±1.0
0.7
0°+10°
-0°
0.42 typ
2.2±0.3
+10°
0° -0°
1
16.3±0.5
10.70±0.12
2-R1.84±0.19
1.27
6.8±1.0
1.12
4.5±0.12
2.79
4.32±0.05
PDE-3067-1
P9/9
ECN3067
10.Note of the design margin under the SOA
Following figure Indicates the evaluation as the reference of the SOA (safetyoperation area) under the
Tj=135°C ( the junction temperature is equal to 135°C) . Dot mark ( · ) shows the points of the IC destruction.
The plural points under the same voltage Indicates the dispersion of the sample.
10
Tj=25'C
IM (A)
8
6
Tj=135'C
4
2
0
0
100
200
300
400
500
600
VM (V)
Fig. The Safety Operation Area in ECN3067 (reference)
In this figure, IM and VM are the current and the voltage at the terminal of motorwiring at the change of
phase (turn on and turn off).
PDE-3067-1
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
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