HITACHI HVC369

HVC369B
Variable Capacitance Diode for VCO
ADE-208-446B (Z)
Rev.2
Mar. 2000
Features
•
•
•
•
Low capacitance and to be usable at GHz.
High capacitance ratio. (n = 2.3 min)
Low series resistance. (rs = 0.5Ω max)
Ultra small F lat P ackage (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVC369B
B3
UFP
Outline
Cathode mark
Mark
1
B3
2
1. Cathode
2. Anode
HVC369B
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
15
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
-55 to +125
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse current
I R1
—
—
10
nA
VR = 15V
I R2
—
—
100
C1
4.65
—
5.15
C4
1.85
—
2.15
Capacitance ratio
n
2.3
—
—
—
C1 / C4
Series resistance
rs
—
—
0.5
Ω
VR = 1V, f = 470 MHz
Capacitance
2
VR = 15V, Ta = 60 °C
pF
VR = 1V, f = 1 MHz
VR = 4V, f = 1 MHz
HVC369B
Main Characteristic
-10
12
10
f=1MHz
(pF)
10
Capacitance C
Reverse current I R (A)
10
-11
-12
10
-13
8
6
4
10
2
-14
10
0
4
8
12
16
0
0.1
20
Reverse voltage V R (V)
1.0
Reverse voltage V R (V)
10
Fig.2 Capacitance Vs. Reverse voltage
Fig.1 Reverse current Vs. Reverse voltage
0.6
0
f=470MHz
LF =∆(LogC)/∆(LogVR )
Series resistance r s (Ω)
0.5
0.4
0.3
0.2
-0.5
-1.0
0.1
0
0.1
1.0
10
Reverse voltage V R (V)
Fig.3 Series resistance Vs. Reverse voltage
-1.5
0.1
1.0
5.0
Reverse voltage V R (V)
Fig.4 Linearity factor Vs. Reverse voltage
3
HVC369B
Package Dimensions
1.2 ± 0.10
0.13 ± 0.05
1.6 ± 0.10
0.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass
4
UFP
—
Conforms
0.0016 g
HVC369B
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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