MICROWAVE CORPORATION HMC266 v01.0300 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Typical Applications Features The HMC266 is ideal for: Input IP3: Up to +17 dBm • 23, 26, & 38 GHz Point to Point Radios Sub-Harmonically Pumped (x2) LO • LMDS Small Size: 1.32mm x 1.47mm • SATCOM Functional Diagram The HMC266 chip is a broadband GaAs MMIC sub-harmonically pumped (x2) balanced passive mixer which can be used as an upconverter or downconverter in a small overall chip area of 1.9 mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. All data is with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). These devices are much smaller and more reliable than hybrid diode mixer designs. 5 MIXERS - CHIP General Description Electrical Specifications, TA = +25° C, LO Drive = +12 dBm IF = 1 GHz Parameter Units Min. 5 - 64 Typ. Max. Frequency Range, RF 20 - 40 GHz Frequency Range, LO 10 - 20 GHz Frequency Range, IF 1-3 GHz Conversion Loss 12 16 dB Noise Figure (SSB) 12 16 dB 2LO to RF Isolation 42 52 dB LO to RF Isolation 20 24 dB 2LO to IF Isolation 50 60 dB RF to IF Isolation 16 22 dB LO to IF Isolation 48 55 dB IP3 (Input) 10 13 dBm 1 dB Compression (Input) 0 +4 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC266 v01.0300 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Conversion Gain vs. Temperature @ LO = +12 dBm Isolation @ LO = +12 dBm 0 0 LO/RF -5 -55 C ISOLATION (dB) +25 C -10 RF/IF -20 -30 LO/IF -40 2LO/RF -50 -60 -15 2LO/IF -70 +85 C -80 -20 15 20 25 30 35 15 40 20 25 30 35 5 40 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Return Loss @ LO = +12 dBm Conversion Gain vs. LO Drive MIXERS - CHIP CONVERSION GAIN (dB) -10 0 0 -5 RETURN LOSS (dB) CONVERSION GAIN (dB) LO +14dBm +12dBm +10dBm +16dBm -10 -15 -5 -10 -15 RF +8dBm -20 -20 15 20 25 30 35 0 40 5 10 20 25 30 35 40 Upconverter Performance Conversion Gain @ LO = +12 dBm IF Bandwidth @ LO = +12 dBm 0 0 IF Return Loss CONVERSION GAIN (dB) CONVERSION GAIN (dB) 15 FREQUENCY (GHz) RF FREQUENCY (GHz) -5 -10 Conversion Gain -15 -20 -5 -10 -15 -20 0 1 2 RF FREQUENCY (GHz) 3 4 15 20 25 30 35 40 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 65 MICROWAVE CORPORATION HMC266 v01.0300 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Input IP3 vs. Temperature @ LO = +12 dBm Input IP3 vs. LO Drive 20 20 15 INPUT IP3 (dBm) INPUT IP3 (dBm) +16dBm +14dBm 10 +12dBm 5 +25C -55C 0 20 25 30 35 40 20 25 RF FREQUENCY (GHz) 30 35 40 RF FREQUENCY (GHz) Input IP2 vs. Temperature @ LO = +12 dBm Input IP2 vs. LO Drive 100 100 +16dBm 95 INPUT IP2 (dBm) INPUT IP2 (dBm) MIXERS - CHIP 10 5 0 5 +85C 15 90 85 95 +85C +25C 90 85 +12dBm -55C +14dBm 80 80 20 25 30 35 40 20 25 RF FREQUENCY (GHz) MxN Spurious Outputs as a Down Converter ±5 ±4 ±3 35 40 P1dB vs. Temperature @ LO = +12 dBm nLO mRF 30 RF FREQUENCY (GHz) 10 ±2 ±1 9 0 -2 67 -1 50 29 0 70 1 1 2 63 3 69 79 23 19 x 63 66 6 INPUT P1dB (dBm) 8 -3 +85C 7 +25C 6 5 4 3 2 -55C 1 0 RF = 27 GHz @ -10 dBm LO = 13 GHz @ +12 dBm drive level All values in dBc below IF power level 5 - 66 20 25 30 35 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 40 HMC266 v01.0300 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz Absolute Maximum Ratings RF / IF Input +13 dBm LO Drive +23 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Outline Drawing (See Handling Mounting Bonding) MIXERS - CHIP 5 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BOND PAD SPACING CENTER TO CENTER IS .006”. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 67 MICROWAVE CORPORATION HMC266 v01.0300 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz MMIC Assembly Techniques Ribbon Bond Ribbon Bond MIXERS - CHIP 5 5 - 68 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on the RF ports. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0300 HMC266 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 40 GHz GaAs Precautions MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding Ribbon bond with 0.076 mm x 0.013 mm (3 mil x 0.5 mil) size recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ulrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 MIXERS - CHIP Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 5 - 69