HMC342 v00.0301 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC342 is ideal for: Noise Figure : 3.5 dB • Microwave Point-to-Point Radios Gain: 20 dB • Millimeterwave Point-to-Point Radios Single Supply : +3V @ 36 mA • VSAT & SATCOM Small Size: 1.06 mm x 2.02 mm Functional Diagram General Description The HMC342 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 13 to 25 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.14 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of + 3.0V @ 36 mA with a noise figure of 3.5 dB. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). Electrical Specifications, TA = +25° C, Vdd = +3V Parameter Min. Frequency Range Gain Max. 13 - 25 16 Units GHz 21 26 dB Gain Variation Over Temperature .03 .04 dB/°C Noise Figure 3.5 4.5 dB Input Return Loss 6 13 dB Output Return Loss 6 14 dB Reverse Isolation 39 45 dB Output Power for 1dB Compression (P1dB) 1 5 dBm Saturated Output Power (Psat) 3 8 dBm Output Third Order Intercept (IP3) 8 13 dBm 41 mA Supply Current (Idd)(Vdd = +3V) 1 - 24 Typ. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC342 v00.0301 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz MMIC SUB-HARMONICALLY PUMPED MIXER @ 17Vdd - 25 GHz GainGaAs vs. Temperature @ Vdd = +3V Gain vs. Temperature = +5V 30 +25 C -55 C +85 C +25 C -55 C +85 C 25 GAIN (dB) GAIN (dB) 25 20 15 20 15 10 10 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 22 24 26 22 24 26 0 S11 -5 S11 -5 S22 RETURN LOSS (dB) RETURN LOSS (dB) 20 Return Loss @ Vdd = +5V 0 -10 -15 -20 -25 S22 -10 -15 -20 -25 -30 -30 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 18 20 FREQUENCY (GHz) Noise Figure vs. Temperature @ Vdd = +3V Noise Figure vs. Temperature @ Vdd = +5V 6 6 5 5 NOISE FIGURE (dB) NOISE FIGURE (dB) 18 FREQUENCY (GHz) Return Loss @ Vdd = +3V 1 AMPLIFIERS - CHIP 30 4 3 2 +25 C -55 C +85 C 1 4 3 2 +25 C -55 C +85 C 1 0 0 12 14 16 18 20 FREQUENCY (GHz) 22 24 26 12 14 16 18 20 22 24 26 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 25 HMC342 v00.0301 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz 21.4 4 21.3 3.8 21.2 3.6 21.1 3.4 21 3.2 0 -10 3 20.9 20.8 2.5 3.5 4 4.5 5 -30 -40 -50 -60 2.8 3 Vdd = +3V Vdd = +5V -20 ISOLATION (dB) GAIN dB) Isolation NOISE FIGURE (dB) AMPLIFIERS - CHIP 1 Gain & Noise Figure vs. Supply Voltage @ 18 GHz -70 5.5 12 14 16 Output P1dB @ Vdd = +3V 12 +25 C -55 C +85 C 24 26 22 24 26 22 24 26 +25 C -55 C +85 C 10 P1dB (dBm) P1dB (dBm) 22 14 10 8 6 8 6 4 4 2 2 0 0 12 14 16 18 20 22 24 26 12 14 16 FREQUENCY (GHz) 18 20 FREQUENCY (GHz) Output IP3 @ Vdd = +3V Output IP3 @ Vdd = +5V 30 30 +25 C -55 C +85 C 25 +25 C -55 C +85 C 25 20 IP3 (dBm) IP3 (dBm) 20 Output P1dB @ Vdd = +5V 14 12 15 10 20 15 10 5 5 12 14 16 18 20 FREQUENCY (GHz) 1 - 26 18 FREQUENCY (GHz) Vdd SUPPLY VOLTAGE (Vdc) 22 24 26 12 14 16 18 20 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC342 v00.0301 MICROWAVE CORPORATION GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Drain Bias Voltage (Vdd) +5.5 Vdc RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 3.62 mW/°C above 85 °C) 0.326 W Thermal Resistance (channel to die bottom) 276 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C 1 AMPLIFIERS - CHIP Absolute Maximum Ratings Outline Drawing Pad Descriptions Pad Number Function Description 1 RF Input This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz 2 RF Output This pad is AC coupled and matched to 50 Ohm from 13 - 25 GHz 3 Vdd Power supply for the 2-stage amplifier. An external RF bypass capacitor of 100 - 300 pF is required. The bond length to the capacitor should be as short as possible. The ground side of the capacitor should be connected to the housing ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 27 MICROWAVE CORPORATION HMC342 v00.0301 GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz AMPLIFIERS - CHIP 1 Assembly Diagrams Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical dieto-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. 1 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v00.0301 HMC342 GaAs MMIC LOW NOISE AMPLIFIER, 13 - 25 GHz GaAs Precautions MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Follow these precautions to avoid permanent damage. 1 Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. AMPLIFIERS - CHIP Cleanliness: Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 1 - 29