ETC CV111-3

CV111-3
The Communications Edge TM
UMTS-band High Linearity Downconverter
25
GND 2
GND
MIXIF
26
IF IN
GND
27
GND
RF IN
28
24
23
22
IF
RF OUT 1
21 IF OUT
IF Amp 20 GND
RF Amp
N/C 3
19 N/C
GND 4
18 GND
LO Driver Amp
N/C 5
15 LO IN
9
10
11
12
13
14
GND
LO
8
LO OUT
Typical applications include frequency down conversion,
modulation and demodulation for receivers used in
CDMA, CDMA2000, W-CDMA / IMT2000, GPRS and
EDGE mobile infrastructure technologies for UMTS
frequency bands.
17 BIAS
16 GND
RF
MIXRF 7
GND
GND 6
MIXLO
Functionality includes RF amplification, frequency
conversion and IF amplification, while an integrated LO
driver amplifier powers the passive mixer. The MCM is
implemented with reliable and mature GaAs MESFET
and InGaP HBT technology.
GND
RF: 1900 – 2200 MHz
50 – 200 MHz
IF:
+38 dBm Output IP3
+21 dBm Output P1dB
5.3 dB Noise Figure
Single supply operation (+5 V)
6x6 mm 28-pin QFN package
Low-side LO configuration
Common footprint with other
PCS/UMTS/cellular versions
The CV111-3 is a high linearity downconverter designed
to meet the demanding issues for performance,
functionality, and cost goals of current and next
generation mobile infrastructure basestations. It provides
high dynamic range performance in a low profile
surface-mount leadless package that measures 6 x 6 mm
square.
N/C
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Functional Diagram
GND
• High dynamic range downconverter
with integrated LO, IF, & RF amps
Product Description
GND
Product Features
Product Information
Specifications1
Parameters
RF Frequency Range
LO Frequency Range
IF Center Frequency Range
% Bandwidth around IF center frequency
SSB Conversion Gain
Gain Drift over Temp (-40° C to 85° C)
Output IP3
Output IP2
Output 1dB Compression Point
Noise Figure
LO Input Drive Level
LO-RF Isolation
LO-IF Isolation
Return Loss: RF Port
Return Loss: LO Port
Return Loss: IF Port
Operating Supply Voltage
Supply Current
FIT Rating
Junction Temperature
Units
Minimum
MHz
MHz
MHz
%
dB
dB
dBm
dBm
dBm
dB
dBm
dB
dB
dB
dB
dB
V
mA
failures
/1E9 hrs
°C
1900
1700
50
Typical
Maximum Comments
2200
2150
200
75
±7.5
21
±0.5
+38
+43
+21
5.3
0
40
25
14
14
207
+5
360
-2.5
+4.9
290
See note 2
See note 2
Temp = 25° C
Referenced to +25° C
See note 3
See note 3
See note 4
+2.5
PLO = 0 dBm
PLO = 0 dBm
+5.1
480
72.1
160
@ 70o C ambient, 90% confidence
See note 5
1. Specifications when using the application specific circuit (shown on page 3) with a low side LO = 0 dBm in a downconverting application over the operating case temperature range.
2. The IF bandwidth of the converter is defined as 15% around any center frequency in its operating IF frequency range. The bandwidth is determined with external components. Specifications are valid around
the total ±7.5% bandwidth. ie. with a center frequency of 80 MHz, the specifications are valid from 80 ± 6 MHz.
3. Assumes the supply voltage = +5 V. OIP3 is measured with Δf = 1 MHz with IFout = 5 dBm / tone.
4. Assumes LO injection noise is filtered at the thermal noise floor, -174 dBm/Hz, at the RF, IF, and Image frequencies.
5. The maximum junction temperature ensures a minimum MTBF rating of 1 million hours of usage.
Absolute Maximum Rating
Ordering Information
Parameters
Rating
Part No.
Description
Operating Case Temperature
Storage Temperature
DC Voltage
Junction Temperature
RF Input (continuous)
-40° to +85° C
-55° to +125° C
+6 V
+220 °C
+2 dBm
CV111-3
UMTS-band High Linearity Downconverter
Fully-Assembled Application Board,
RF = 1920 – 1980 MHz, IF = 75 MHz
Fully-Assembled Application Board,
RF = 2110 – 2170 MHz, IF = 75 MHz
CV111-3PCB75RX
CV111-3PCB75TX
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 4 April 2005
CV111-3
The Communications Edge TM
UMTS-band High Linearity Downconverter
Product Information
MIXIF
26
25
24
23
22
IF
RF OUT 1
GND 2
GND
GND
27
IF IN
RF IN
28
GND
GND
Device Architecture / Application Circuit Information
IF Amp 20 GND
RF Amp
N/C 3
19 N/C
GND 4
Gain
(dB)
Stage
Output
P1dB
(dBm)
Output
IP3
(dBm)
NF
(dB)
Current
(mA)
18 GND
LO Driver Amp
N/C 5
17 BIAS
16 GND
RF
MIXRF 7
15 LO IN
9
10
11
12
13
GND
N/C
GND
MIXLO
GND
LO OUT
LO
8
14
RF Amplifier
RF Filter
LO Amp / MMIC Mixer
IF Amplifier
CV111-1
13
-2
-9
19
21
41
3.2
----2.0
9
23
9.8
23
41
2.1
Cumulative Performance
140
--100
140
380
Cumulative Performance
Output Output
NF
P1dB
IP3
(dB)
(dBm)
(dBm)
13
21.0
41.0
3.2
11
19.0
39.0
3.3
2
6.5
22.2
4.5
21
21.0
38.1
5.3
21
21.0
38.1
5.3
Gain
(dB)
GND
GND 6
Typical Downconverter Performance Chain Analysis
21 IF OUT
RF Amp Matching
IF Amp Matching
IF Amp Bias
RF Amp Bias
RF Bandpass Filter /
Attenuator Pad
Optional IF
Lowpass Filter
Printed Circuit Board Material:
.014” FR-4, 4 layers, .062” total thickness
LO Amp Bias
LO Amp Bias
RF / IF Diplexer
(used for cellular versions only)
LO Lowpass Filter
(not used in this product)
CV111-3: The application circuit can be broken up into four main
functions as denoted in the colored dotted areas above: RF/IF
diplexing (purple; this is only used with the cellular-band CV
products), amplifier matching (green), filtering (red), and dc biasing
(blue). There are various placeholders for chip components in the
circuit schematic so that a common PCB can be used for all WJ
single-branch converters. Additional placeholders for other optional
functions such as filtering are also included.
image frequency. It is permissible to not use a filter and use a 2 dB
pad with R6, R7, and R16 instead with slightly degraded noise
figure performance.
RF / IF Amplifier Matching: The RF amplifier requires a
matching element (C12) for optimal gain and input return loss
performance. The IF amplifier requires matching elements to
optimize the performance of the amplifier to the desired IF center
frequency. Since IF bandwidths are typically on the order of 5 to
10%, a simple two element matching network, in the form of either
a high-pass or low-pass filter structure, is sufficient to match the
MMIC IF amplifier over these narrow bandwidths.
Proper
component values for other IF center frequencies can be provided by
emailing to [email protected]
IF and LO Lowpass Filtering (optional): Filtering of unwanted
RF and LO signals are typically performed in the IF chain. This
filtering function may be realized using lumped elements;
placeholders (L9, C21, C22) are provided in the application circuit
to allow for lumped-element filtering to be implemented if desired.
The LO lowpass filter is used only in the cellular-band CV products;
it should not be used for this product. L1 should be loaded with a 0
Ω jumper.
RF Bandpass Filtering: Bandpass filtering is recommended to
achieve the best noise figure performance with the downconverter.
The bandpass filter, implemented with a SAW filter on the
application circuit, allows for the suppression of noise from the
External Diplexer: This is only used with the cellular-band CV
products. The mixer performs the diplexing internally for the
CV111-3; therefore the components shown in the diplexer section
should be loaded as follows: C2 = C14 = 0 Ω.
DC biasing: DC bias must be provided for the RF, LO and IF
amplifiers in the converter. R1 sets the operating current for the last
stage of the LO amplifier and is chosen to optimize the mixer LO
drive level. Proper RF chokes and bypass capacitors are chosen for
proper amplifier biasing at the intended frequency of operation. The
“+5 V” dc bias should be supplied directly from a voltage regulator.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 4 April 2005
CV111-3
The Communications Edge TM
UMTS-band High Linearity Downconverter
Product Information
Bill of Materials
Downconverting Application Circuit: CV111-3PCB75RX
RF = 1920 – 1980 MHz, IF = 75 MHz
Ref. Desig.
(Targeted for UMTS-band Receive Path Downconversion Applications)
R1
R2, R3, R5
R16, C2, C14,
L1, L9
R6, R7, C11
C13, C15, C19
C20, C21, C22
L5, L6, L8, L10
R8
C1, C3, C5, C6
C4, C8
C7, C10, C16
C9
C12
C17
L2
L3
L4
L7
F1
D1
U1
Component
25.5 Ω chip resistor,
size 0805
0 Ω chip resistor
DNP
3.3 Ω chip resistor
100 pF chip capacitor
1000 pF chip capacitor
0.1 μF chip capacitor
0.018 μF chip capacitor
1.2 pF chip capacitor
22 pF chip capacitor
18 nH chip inductor
120 nH chip inductor
220 nH chip inductor,
size 0805
150 nH chip inductor
SAWTEK Filter 855938
1920 – 1980 MHz BW
Jumper wire
(or 0 Ω resistor)
CV111-3 WJ Converter
All components are of size 0603 unless otherwise specified.
DNP represents “Do Not Place”
Bill of Materials
Downconverting Application Circuit: CV111-3PCB75TX
RF = 2110 – 2170 MHz, IF = 75 MHz
Ref. Desig.
(Targeted for UMTS-band Transmit Path Error Correction Feedback applications)
R1
R2, R3, R5
R16, C2, C14,
L1, L9
R6, R7, C11
C13, C15, C19
C20, C21, C22
L5, L6, L8, L10
R8
C1, C3, C5, C6
C4, C8
C7, C10, C16
C9
C12
C17
L2
L3
L4
L7
F1
D1
U1
Component
25.5 Ω chip resistor,
size 0805
0 Ω chip resistor
DNP
3.3 Ω chip resistor
100 pF chip capacitor
1000 pF chip capacitor
0.1 μF chip capacitor
0.018 μF chip capacitor
1.2 pF chip capacitor
22 pF chip capacitor
18 nH chip inductor
120 nH chip inductor
220 nH chip inductor,
size 0805
150 nH chip inductor
SAWTEK Filter 855937
2110 – 2170 MHz BW
Jumper wire
(or 0 Ω resistor)
CV111-3 WJ Converter
All components are of size 0603 unless otherwise specified.
DNP represents “Do Not Place”
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 4 April 2005
CV111-3
The Communications Edge TM
UMTS-band High Linearity Downconverter
Product Information
Product Marking
Outline Drawing
The component will be lasermarked with a “CV111-3”
product label with a four-digit alphanumeric lot code
on the top surface of the package. Tape and reel
specifications for this part will be located on the
website in the “Application Notes” section.
ESD / MSL Information
ESD Classification:
Value:
Test:
Standard:
Class 1B
Passes 500 V to <1000 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Classification:
Value:
Test:
Standard:
Class III
Passes 500 V to <1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating:
Standard:
Level 1 at +250 °C convection reflow
JEDEC Standard J-STD-020B
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
FUNCTION
RF Amp Output
GND
N/C
GND
N/C
GND
Mixer RF Input
GND
N/C
GND
Mixer LO Input
GND
LO Amp Output
GND
Pin
15
16
17
18
19
20
21
22
23
24
25
26
27
28
FUNCTION
LO Amp Input
GND
LO Amp Bias
GND
N/C
GND
IF Amp Output/Bias
GND
IF Amp Input
GND
Mixer IF Output
GND
RF Amp Input
GND
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 4 April 2005