Preliminary IGW08T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology C • • • • • Approx. 1.0V reduced VCE(sat) compared to BUP305D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ • • Type IGW08T120 VCE IC VCE(sat),Tj=25°C Tj,max 1200V 8A 1.7V 150°C G E Package Ordering Code TO-247AC Q67040-S4513 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 16 TC = 100°C 8 Pulsed collector current, tp limited by Tjmax ICpul s 24 Turn off safe operating area - 24 VCE ≤ 1200V, Tj ≤ 150°C IF Diode forward current TC = 25°C 16 TC = 100°C 8 Gate-emitter voltage 1) Short circuit withstand time VGE ±20 V tSC 10 µs Ptot 70 W °C VGE = 15V, VCC ≤ 1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction temperature Tj -40...+150 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 1) 260 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit 1.7 K/W Characteristic IGBT thermal resistance, RthJC junction – case Thermal resistance, RthJA TO-247AC 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5 °C - 1.7 2.2 T j =1 2 5° C - 2.0 - T j =1 5 0° C - 2.2 - 5.0 5.8 6.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .5m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 8 A Gate-emitter threshold voltage VGE(th) I C = 0. 3m A, V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V mA T j =2 5 °C - - 0.2 T j =1 5 0° C - - 2.0 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 8 A - 5 - S Integrated gate resistor RGint Power Semiconductors none 2 Ω Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 600 - Output capacitance Coss V G E = 0V , - 36 - Reverse transfer capacitance Crss f= 1 MH z - 28 - Gate charge QGate V C C = 96 0 V, I C =8 A - 53 - nC nH pF V G E = 15 V Internal emitter inductance LE T O - 24 7A C - - 13 IC(SC) V G E = 15 V ,t S C ≤ 10 µs V C C = 6 0 0 V, T j = 25 ° C - 48 - measured 5mm (0.197 in.) from case Short circuit collector current 1) A Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 40 - - 23 - - 450 - - 70 - - 0.67 - - 0.7 - - 1.37 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 60 0 V, I C = 8 A, V G E =- 15 /1 5 V , R G = 81 Ω, 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. - 40 - - 26 - - 570 - - 140 - - 1.08 - - 1.2 - - 2.28 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) 2) T j =1 5 0° C, V C C = 60 0 V, I C =8 A , V G E =- 15 /1 5 V , R G = 8 1Ω , 2) L σ =1 8 0n H, 2) C σ = 3 9p F Energy losses include “tail” and diode reverse recovery. ns mJ Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series tp=2µs 10A TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 20A 15A TC=110°C 10A Ic 5A 0A 10Hz 50µs 1A 150µs 500µs 0,1A 20ms DC Ic 100Hz 1kHz 10kHz 0,01A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 81Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 15A 70W 60W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10µs 50W 40W 30W 20W 10A 5A 10W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 150°C) Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series 20A VGE=17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 20A 15V 15A 13V 11V 9V 10A 7V 5A 0A 15V 15A 13V 11V 9V 10A 7V 5A 0A 0V 1V 2V 3V 4V 5V 6V 0V 20A 15A 10A 5A TJ=150°C 25°C 0A 0V 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT VGE=17V 3,0V IC=15A 2,5V 2,0V IC=8A 1,5V IC=5A IC=2.5A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series 100ns td(off) tf tf t, SWITCHING TIMES t, SWITCHING TIMES td(off) td(on) 10ns tr 1ns 5A 10A 100 ns td(on) 10 ns 1 ns 15A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=81Ω, Dynamic test circuit in Figure E) tr 5Ω 50Ω 100Ω 150Ω 200Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81Ω, Dynamic test circuit in Figure E) Power Semiconductors 7V 6V max. 5V typ. 4V min. 3V 2V 1V 0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series Ets* 6,0mJ 4,0mJ Eoff * on 2,0mJ EEonoff* *) Eon and Ets include losses due to diode recovery 3,2 mJ E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Etsinclude losses due to diode recovery Ets* 2,8 mJ 2,4 mJ 2,0 mJ Eoff Eon * 1,6 mJ E Eoff * on 1,2 mJ 0,8 mJ 0,4 mJ 0,0mJ 5A 10A 0,0 mJ 15A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, RG=81Ω, Dynamic test circuit in Figure E) *) E on and E ts include losses due to diode recovery 1,5mJ E off Eon * E on* E off 1,0mJ 0,5mJ 100Ω 150Ω 200Ω *) Eon and Ets include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 2,0mJ 50Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=600V, VGE=0/15V, IC=8A, Dynamic test circuit in Figure E) E ts * 2,5mJ 5Ω 3mJ 2mJ Ets* off * 1mJ EE on EEonoff * 0,0mJ 50°C 100°C 0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=8A, RG=81Ω, Dynamic test circuit in Figure E) Power Semiconductors 500V 600V 700V 800V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=150°C, VGE=0/15V, IC=25A, RG=22Ω, Dynamic test circuit in Figure E) 7 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series 1nF 15V 240V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 960V 10V 100pF Coss 5V Crss 0V 0nC 25nC 10pF 0V 50nC 15µs 10µs 5µs 0µs 12V 14V 75A 50A 25A 0A 16V VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT tSC, SHORT CIRCUIT WITHSTAND TIME QGE, GATE CHARGE Figure 17. Typical gate charge (IC=8 A) 10V 12V 14V 16V 18V VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 8 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 600V VCE 30A 400V 20A 10A 200V 0V 30A 600V 20A 400V IC 200V 10A VCE IC 0A 0us 0.5us 1us 1.5us t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=81Ω, Tj = 150°C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TrenchStoP Series 0A 0us 0V 0.5us 1us 1.5us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=81Ω, Tj = 150°C, Dynamic test circuit in Figure E) 0 10 K/W D=0.5 0.2 R,(K/W) 0.187 0.575 0.589 0.350 0.1 -1 0.05 R1 10 K/W 0.02 0.01 τ, (s) 1.73*10-1 2.75*10-2 2.57*10-3 2.71*10-4 R2 C1= τ1/R1 C 2 = τ 2 /R 2 single pulse -2 10 K/W 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series dimensions TO-247AC symbol [mm] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 Q 10 0.0299 max H ∅P Power Semiconductors [inch] 3.61 6.12 0.1421 6.22 0.2409 0.2449 Preliminary / Rev. 1 Sep-03 Preliminary IGW08T120 TrenchStoP Series τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =180nH an d Stray capacity C σ =39pF. Figure B. Definition of switching losses Power Semiconductors 11 Preliminary / Rev. 1 Sep-03 Preliminary TrenchStoP Series IGW08T120 Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Preliminary / Rev. 1 Sep-03