IS7000 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR Dimensions in mm 2.54 DESCRIPTION The IS7000 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a space efficient, end-stackable 4 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO ( 300V min. ) APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances 7.0 6.0 1 4 2 3 1.2 5.08 4.08 7.62 4.0 3.0 13° Max 0.5 3.0 0.26 0.5 3.35 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation OPTION SM OPTION G 7.62 SURFACE MOUNT POWER DISSIPATION Total Power Dissipation 0.6 0.1 10.46 9.86 1.25 0.75 200mW 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 300V 0.1V 150mA 150mW ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92463m-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 4 Collector-emitter Breakdown (BVCEO ) Emitter-collector Breakdown (BVECO ) 1.2 V V µA IF = 10mA IR = 10µA VR = 4V 300 V IC = 0.1mA ( note 2 ) 0.1 V IE = 0.1mA nA VCE = 200V % 1mA IF , 2V VCE V 20mA IF , 100mA IC VRMS VPK See note 1 See note 1 Ω VIO = 500V (note 1) µs µs µs µs VCC = 10V, IC= 10mA, RL = 100Ω 10 Collector-emitter Dark Current (ICEO ) Coupled Current Transfer Ratio (CTR) 200 1000 4000 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 1.2 5300 7500 Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Turn-on Time Turn-off Time Note 1 Note 2 7/12/00 tr tf ton toff 1.4 TEST CONDITION 40 15 50 15 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92463m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 140 Collector current I C (mA) Collector power dissipation P C (mW) 200 150 100 50 10mA 120 100 2mA 80 60 1mA 40 IF = 0.5mA 20 0 0 -30 0 25 50 75 100 0 125 0.4 Forward Current vs. Ambient Temperature Relative current transfer ratio Forward current I F (mA) 1.6 2.0 IF = 1mA VCE= 2V 1.5 50 40 30 20 10 0 1.0 0.5 0 -30 0 25 50 75 100 125 -30 Ambient temperature TA ( °C ) 10-5 Collector dark current I CEO (A) 1.2 1.0 0.8 IF = 20mA IC = 100mA 0.6 0 25 50 75 Ambient temperature TA ( °C ) 100 Collector Dark Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature (V) CE(SAT) 1.2 Relative Current Transfer Ratio vs. Ambient Temperature 60 Collector-emitter saturation voltage V 0.8 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) 0.4 0.2 0 VCE= 200V 10-6 10-7 10-8 10-9 10-10 10-11 -30 0 25 50 75 Ambient temperature TA ( °C ) 7/12/00 4mA 100 -30 0 25 50 75 100 Ambient temperature TA ( °C ) DB92463m-AAS/A1