IS452 HIGH DENSITY MOUNTING HIGH VOLTAGE DARLINGTON OPTICALLY COUPLED ISOLATORS DESCRIPTION The IS452 is an optically coupled isolator consisting of an infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a space efficient dual in line plastic package. Dimensions in mm FEATURES l Marked as FPH1. l Current Transfer Ratio MIN. 1000% l High collector-emitter voltage, Vceo=300V l Isolation Voltage (3.75kVRMS ,5.3kVPK ) All electrical parameters 100% tested Drop in replacement for Sharp PC452 l l APPLICATIONS l Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 22/4/02 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92862l-AAS/A3 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 300V 0.1V 150mW POWER DISSIPATION Total Power Dissipation 170mW (derate linearly 2.26mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 1.2 Collector-emitter Breakdown (BVCEO) 300 Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 0.1 Current Transfer Ratio (CTR) 1000 10 200 Collector-emitter Saturation VoltageVCE (SAT) Input to Output Isolation Voltage VISO 1.2 3750 5300 Input-output Isolation Resistance RISO 5x1010 Output Rise Time tr Output Fall Time tf Note 1 22/4/02 1.4 4 3 18 18 TEST CONDITION V V µA IF = 10mA IR = 10µA VR = 4V V IC = 0.1mA V nA IE = 10uA VCE = 200V % 1mA IF , 2V VCE V 20mA IF , 100mA IC VRMS VPK See note 1 See note 1 Ω µs µs VIO = 500V (note 1) VCE = 2V , IC = 2mA, RL = 100Ω Measured with input leads shorted together and output leads shorted together. DB92862l-AAS/A3 TAPING DIMENSIONS Description Tape wide Pitch of sprocket holes Distance of compartment Distance of compartment to compartment 12/07/01 Symbol W P0 F P2 P1 Dimensions in mm ( inches ) 12 ± 0.3 ( .47 ) 4 ± 0.1 ( .15 ) 5.5 ± 0.1 ( .217 ) 2 ± 0.1 ( .079 ) 8 ± 0.1 ( .315 ) Appendix to Mini Flat Pack FPH-AAS/A1 CHARACTERISTIC CURVES Fig.1 Forward Current vs. Ambient Temperature Fig.2 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation Pc (mW) 60 F (mA) 50 Forward current I 40 30 20 10 0 -55 0 25 50 75 100 125 150 100 50 0 -55 o 3.5 3 125 o 2.5 2 1.5 o o 80 C 40 C o 20 C o 60 C 10 1 0.5 1 0 1 2 3 4 0.5 5 0.7 0.9 Forward current I F (mA) 1.1 1.3 1.5 1.7 1.9 Forward voltage (V) Fig.5 Current Transfer Ratio vs. Forward Current Fig.6 Collector Current vs. Collector-emitter Voltage 7000 100 VCE = 2V 6000 Collector current Ic (mA) Current transfer ratio CTR (%) 100 100 C 0 5000 4000 3000 2000 2mA 10mA 5mA 80 3mA 2.5mA 1.5mA 1.5mA 60 P C (MAX.) 1mA 40 20 1000 I F = 0.5mA 0 0.1 0 1 Forward current (mA) 12/07/01 75 100 Ic= 5mA 10mA 30mA 50mA 70mA 100mA 4 50 Fig.4 Forward Current vs. Forward Voltage Forward current (mA) Collector-emitter saturation voltage VCE (sat) (V) 5 25 Ambient temperature Ta ( C) Fig.3 Collector-emitter saturation Voltage vs. Forward current 4.5 0 o Ambient temperature Ta ( C) 10 0 1 2 3 4 5 Collector-emitter voltage V CE(V) Appendix to Mini Flat Pack FPH-AAS/A1 CHARACTERISTIC CURVES Relative current transfer ratio (%) 1.2 Fig.8 Collector-emitter Saturation Voltage vs. Ambient Temperature I F = 1mA VCE = 2V 1.0 0.8 0.6 0.4 0.2 1.2 Collector-emitter saturation voltage VCE (sat) (V) Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature 0 I F = 20mA I C = 100mA 1.0 0.8 0.6 0.4 0.2 20 40 60 100 80 20 40 60 80 O Ambient temperature Ta ( C) Fig.9 Collector Dark Current vs. Temperature Fig.10 Response Time vs. Load Resistance 1000 1000 (nA) VCE = 200V 500 s) CEO 100 Response time ( Collector dark current I VCE = 2V I C = 20mA Ta= 25 C tr O 10 200 100 tf 50 td ts 20 10 5 2 1 20 40 60 80 1 100 O VCE = 2V I C = 20mA Ta= 25 C O -5 1 10 Test Circuit for Response Time Fig.11 Frequency Response 0 0.1 Load resistance R L (k ) Ambient temperature Ta ( C) Voltage gain Av (dB) 100 O Ambient temperature Ta ( C) Input Vcc Output Input RD RL 10% Output 90% td ts -10 tr -15 R L = 1k 100 tf Test Circuit for Frequency Response 10 Vcc -20 RD -25 0.1 1 10 100 RL Output 500 Frequency f (kHz) 12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1 TEMPERATURE PROFILE OF SOLDERING REFLOW (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. 30 seconds 230 C 200 C 180 C 1 minute 25 C 2 minutes 1.5 minutes 1 minute (2) When using another soldering method such as infrated ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 12/07/01 Appendix to Mini Flat Pack FPH-AAS/A1