HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 VGS Continuous ±20 ±20 20 V VGSM Transient ±30 ±30 20 V ID25 TC = 25°C, Chip capability 100 106 A TO-264 AA (IXFK) 90N20 100N20 106N20 200 200 200 V 90 200 ID80 TC = 80°C, limited by external leads 76 - IDM TC = 25°C, pulse width limited by TJM 360 400 IAR TC = 25°C 50 50 EAR TC = 25°C 30 30 30 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 5 5 V/ns PD TC = 25°C 500 520 (TAB) G 200 V D S miniBLOC, SOT-227 B (IXFN) E153432 S G D A 424 A A G S W °C -55 ... +150 TJ TJM 150 °C Tstg -55 ... +150 °C 300 - °C t = 1 min t=1s - 2500 3000 V~ V~ Mounting torque Terminal connection torque 0.9/6 - TL 1.6 mm (0.063 in) from case for 10 s VISOL 50/60 Hz, RMS IISOL £ 1 mA Md 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. S D S G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier l ● ● ● ● ● Weight 10 30 g ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays ● ● VDSS VGS = 0 V, ID = 1 mA 200 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C TJ = 125°C IXFK90N20 IXFN100N20 IXFN106N20 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4 V ±200 nA 400 2 mA mA 0.023 0.023 0.020 W W W ● ● ● ● ● Advantages Easy to mount Space savings High power density ● ● ● 92804H (7/97) 1-4 IXFK100N20 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25, pulse test Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. C iss Coss IXFN90N20 VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 60 S 9000 pF 1600 pF 590 pF 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 ns td(off) RG = 1 W (External), 75 ns 30 ns 380 nC 70 nC 190 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B Source-Drain Diode 0.25 0.15 K/W 0.24 0.05 K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = 100 A, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % t rr QRM IRM K/W IXFK90N20 IXFN100N20 IXFN106N20 90 100 106 A A A IXFK90N20 IXFN100N20 IXFN106N20 360 424 A A 1.5 V 200 ns mC A IF = 50 A, -di/dt = 100 A/ms, VR = 100 V 3 38 TO-264 AA Outline Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. © 2000 IXYS All rights reserved IXFN106N20 Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK100N20 Fig. 1 Output Characteristics 200 ID - Amperes 160 200 9V 8V 7V VGS = 10V TJ = 25°C 180 160 140 120 6V 100 80 60 5V 40 140 TJ = 25°C 120 100 80 60 40 20 20 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 VDS - Volts 2.6 2.0 1.8 VGS = 10V 1.6 1.4 1.2 VGS = 15V 1.0 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 0 50 100 150 200 250 2.00 1.75 ID = 53A 1.50 1.25 1.00 0.75 0.8 300 0.50 -50 350 -25 0 ID - Amperes Fig. 5 Drain Current vs. Case Temperature 1.2 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage VGS(th) BVDSS 1.1 BV/VG(th) - Normalized 100 90N20 80 60 40 20 0 -50 25 TJ - Degrees C 106N20 ID - Amperes 5 2.25 2.2 RDS(on) - Normalized RDS(on) - Normalized 2.50 TJ = 25°C 2.4 4 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 120 IXFN106N20 Fig. 2 Input Admittance ID - Amperes 180 IXFN90N20 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFK100N20 Fig.7 Gate Charge Characteristic Curve IXFN90N20 Fig.8 Capacitance Curves 9000 14 Capacitance - pF VGE - Volts 10 Ciss 8000 VDS = 100V ID = 50A IG = 10mA 12 8 6 4 7000 f = 1MHz VDS = 25V 6000 5000 4000 3000 Coss 2000 2 Crss 1000 0 0 0 50 100 150 200 250 300 350 400 0 5 Gate Charge - nCoulombs 100 IXFN106N20 10 15 20 25 VDS - Volts Fig.9 Source Current vs. Source to Drain Voltage ID - Amperes 80 60 TJ = 125°C 40 TJ = 25°C 20 0 0.4 0.6 0.8 1.0 1.2 VSD - Volts Fig.10 Transient Thermal Impedance Thermal Response - K/W 0.5 0.1 0.01 0.001 0.01 0.1 1 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4