HiPerFETTM Power MOSFETs VDSS = ID25 = RDS(on) = IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Preliminary data sheet Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings VGS VGSM Continuous Transient ID25 IDM IAR 1000 1000 V V ±20 ±30 V V TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 15 60 15 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in) from case for 10 s Md Mounting torque 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TO-247 TO-264 Weight TO-247 TO-268 TO-264 (TAB) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) G D G = Gate S = Source 6 4 10 g g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 4 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 0.5 • ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2001 IXYS All rights reserved 1000 3.0 TJ = 25°C TJ = 125°C TAB = Drain Features z Test Conditions D (TAB) S 1.13/10 Nm/lb.in. 0.9/6 Nm/lb.in. z Symbol 1000 V 15 A 0.7 Ω V 5.0 V ±200 nA 50 2 µA mA 0.7 Ω z z z z IXYS advanced low Qg process International standard packages Epoxy meet UL 94 V-0, flammability classification Low RDS (on) low Qg Avalanche energy and current rated Fast intrinsic rectifier Advantages z z z Easy to mount Space savings High power density 98627A (9/01) IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 7 12 S 4500 pF 410 pF Crss 150 pF td(on) 28 ns TO-247 AD (IXFH) Outline 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 27 ns td(off) RG = 2.0 Ω (External), 67 ns 14 ns tf Qg(on) 130 170 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgs Qgd RthCK TO-247 TO-264 Source-Drain Diode Dim. nC nC 67 nC 0.35 0.25 0.15 K/W K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 15 A ISM Repetitive; pulse width limited by TJM 60 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V 250 ns µC A t rr QRM IRM IF = IS -di/dt = 100 A/µs, VR = 100 V 1 9 3 Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain 31 RthJC 2 TO-268 Outline Millimeter Min. Max. Inches Min. Max. A A1 A2 4.7 2.2 2.2 5.3 2.54 2.6 .185 .087 .059 .209 .102 .098 b b1 b2 1.0 1.65 2.87 1.4 2.13 3.12 .040 .065 .113 .055 .084 .123 C D E .4 20.80 15.75 .8 21.46 16.26 .016 .819 .610 .031 .845 .640 e L L1 5.20 19.81 5.72 20.32 4.50 0.205 .780 0.225 .800 .177 ∅P Q 3.55 5.89 3.65 6.40 .140 0.232 .144 0.252 R S 4.32 6.15 5.49 BSC .170 242 .216 BSC TO-264 AA Outline Dim. Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025