HiPerFETTM Power MOSFETs IXFX 44N60 IXFK 44N60 VDSS ID25 RDS(on) Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 44 176 44 A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J Maximum Ratings dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W PD TC = 25°C 5 V/ns 560 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C TL 1.6 mm (0.063 in.) from case for 10 s Md Mounting torque Weight TO-264 0.4/6 PLUS 247 TO-264 Nm/lb.in. 6 10 g g Symbol Test Conditions VDSS VGS = 0 V, ID = 3mA 600 V VGS(th) VDS = VGS, ID = 8mA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G D G = Gate S = Source (TAB) S D = Drain TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved = 600 V = 44 A = 130 mW 100 mA 2 mA 130 mW Advantages • PLUS 247TM package for clip or spring mounting • Space savings • High power density 98611B (7/00) 1-4 IXFK 44N60 IXFX 44N60 Symbol Test Conditions gfs VDS = 10 V; ID = 0.5 • ID25 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 30 45 S 8900 pF 1000 pF 330 pF 40 ns 50 ns 100 ns 40 ns 330 nC 60 nC 65 nC RthJC 0.22 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 44 A Repetitive; pulse width limited by TJM 176 A IF = IS, VGS = 0 V, Note 1 1.3 V 250 ns t rr QRM K/W IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 1.4 mC 8 A PLUS247TM (IXFX) Outline Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 TO-264 AA (IXFK) Outline Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T © 2000 IXYS All rights reserved Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 2-4 IXFK 44N60 IXFX 44N60 Figure 1. Output Characteristics at 25OC Figure 2. Output Characteristics at 125OC 80 100 O TJ = 25 C 60 60 ID - Amperes ID - Amperes 80 5V 40 5V 40 0 0 0 4 8 12 16 20 0 24 4 8 12 16 20 24 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.4 2.4 VGS = 10V VGS = 10V TJ = 125OC RDS(ON) - Normalized RDS(ON) - Normalized 6V 20 20 2.0 1.6 TJ = 25OC 1.2 0.8 0 20 40 60 80 2.0 ID = 44A 1.6 ID = 22A 1.2 0.8 25 100 50 ID - Amperes 75 100 Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves 60 60 50 50 40 30 20 10 150 TJ = 125oC 40 30 TJ = 25oC 20 10 0 -50 -25 125 TJ - Degrees C ID - Amperes ID - Amperes VGS = 10V 9V 8V 7V TJ = 125OC VGS = 10V 9V 8V 7V 6V 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Volts 3-4 IXFK 44N60 IXFX 44N60 Figure 7. Gate Charge Figure 8. Capacitance Curves 12 10000 Capacitance - pF 8 VGS - Volts Ciss VDS = 300V ID = 30A IG = 10mA 10 6 4 Coss 1000 Crss 2 0 f = 1MHz 0 50 100 150 200 250 300 350 400 100 0 5 10 15 Gate Charge - nC 20 25 30 35 40 VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 ID - Amperes 80 TJ = 125OC 60 40 TJ = 25OC 20 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4