HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS(on) 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings IXFK IXFN 50N50 55N50 IXFK 55N50 IXFN 50N50 VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C 500 500 500 500 V V VGS VGSM Continuous Transient ±20 ±30 ±20 ±30 V V ID25 IDM IAR TC = 25°C T C =25°C, TC = 25°C EAR TC = 25°C dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω PD 55 220 55 50 200 50 TC = 25°C 55 220 55 50 A 200 A 50 A 60 60 mJ 5 5 V/ns 600 TJ TJM Tstg VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md Mounting torque Terminal connection torque 300 t = 1 min t=1s Weight N/A N/A 0.9/6 N/A 10 °C N/A 2500 3000 V~ V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 2.5 IGSS VGS = ±20V; VDS = 0V IDSS VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C RDS(on) VGS = 10 V, ID = 0.5 • ID25 Note 1 55N50 50N50 © 2002 IXYS All rights reserved D (TAB) S miniBLOC, SOT-227 B (IXFN) E153432 S G S W °C °C °C -55 ... +150 150 -55 ... +150 1.6 mm (0.063 in) from case for 10 s D D 560 TL G V 4.5 V ±200 nA 25 2 µA mA 80 100 mΩ mΩ G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • Temperature and lighting controls Advantages • Easy to mount • Space savings • High power density 97502F (04/02) IXFK50N50 IXFN50N50 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10 V; ID = 0.5 • ID25 Note 1 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss 45 S 9400 pF 1280 pF 460 pF 45 ns 60 ns 120 ns 45 ns td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 1 Ω (External), tf Qg(on) Qgs 330 nC 55 nC 155 nC VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC TO-264 AA RthCK TO-264 AA RthJC miniBLOC, SOT-227 B RthCK miniBLOC, SOT-227 B 0.22 0.15 0.05 Source-Drain Diode (TJ = 25°C, unless otherwise specified) Symbol Test Conditions K/W VGS = 0 55N50 50N50 55 50 A A ISM Repetitive; pulse width limited by TJM 55N50 50N50 220 200 A A VSD IF = 100 A, VGS = 0 V Note 1 1.5 V 250 ns IF = 25 A, -di/dt = 100 A/µs, VR = 100 V IRM A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T K/W IS QRM Dim. K/W Characteristic Values Min. Typ. Max. t rr TO-264 AA Outline K/W 0.21 1.0 µC 10 A Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IXFK55N50 IXFN55N50 Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 miniBLOC, SOT-227 B M4 screws (4x) supplied Dim. Millimeter Min. Max. Inches Min. Max. A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFK50N50 IXFN50N50 100 VGS = 10V 9V 8V 7V 100 TJ = 125OC 80 ID - Amperes TJ = 25OC 120 ID - Amperes Figure 2. Output Characteristics at 125OC Figure 1. Output Characteristics at 25OC 140 6V 80 60 40 5V 4 8 12 16 20 5V 40 24 0 4 8 12 RDS(on) normalized to 0.5 ID25 value vs. ID 2.8 2.2 2.4 RDS(ON) - Normalized RDS(ON) - Normalized VGS = 10V TJ = 125OC 2.0 1.6 TJ = 25OC 1.2 0.8 0 20 40 60 80 100 2.0 VGS = 10V ID = 55A 1.6 1.4 ID = 27.5A 1.2 1.0 25 120 50 IXF_50N50 20 -25 0 25 50 75 TC - Degrees C © 2002 IXYS All rights reserved 125 150 Figure 6. Admittance Curves TJ = 125oC 60 40 TJ = 25oC 20 10 -50 100 80 ID - Amperes ID - Amperes IXF_55N50 30 0 75 TJ - Degrees C 100 40 24 1.8 Figure 5. Drain Current vs. Case Temperature 50 20 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ ID - Amperes 60 16 VDS - Volts VDS - Volts Figure 3. 6V 60 0 0 VGS = 10V 9V 8V 7V 20 20 0 IXFK55N50 IXFN55N50 100 125 150 0 3.0 3.5 4.0 4.5 VGS - Volts 5.0 5.5 6.0 IXFK50N50 IXFN50N50 Figure 7. Gate Charge IXFK55N50 IXFN55N50 Figure 8. Capacitance Curves 12 10000 Ciss 10 Capacitance - pF VDS = 250V ID = 27.5A VGS - Volts 8 6 4 f = 1MHz Coss 1000 Crss 2 0 0 50 100 150 200 250 300 100 350 0 5 10 Gate Charge - nC Figure 9. 15 20 25 30 35 40 VDS - Volts Forward Voltage Drop of the Intrinsic Diode 100 ID - Amperes 80 60 40 TJ = 125OC 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 VSD - Volts Figure 10. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1