IXYS VUE130

VUE 130-12NO7
IdAV = 130 A
VRRM = 1200 V
trr
= 40 ns
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
Preliminary data sheet
VRSM
VRRM
V
V
1200
1200
PS16
Typ
~A 1
~L 9
~ K10
VUE 130-12NO7
EG 1
Pin arangement see outlines
Symbol
Conditions
IdAV ①
IdAVM
TC = 70°C, module
130
90
A
A
IFSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
500
525
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
415
440
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1160
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
860
820
A2s
A2 s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
I2t
Maximum Ratings
TVJ
TVJM
Tstg
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Md
Weight
Mounting torque (M4)
typ.
Symbol
Conditions
1.5-2/14-18 Nm/lb.in.
24
g
Characteristic Values
typ.
max.
IR
VR = VRRM
VR = VRRM
TVJ = 25°C
TVJ = TVJM
1
2.5
mA
mA
VF
IF = 60 A
TVJ = 25°C
2.7
V
VT0
rT
for power-loss calculations only
RthJC
RthCH
per diode; DC current
per diode, DC current, typ.
IRM
trr
IF = 130 A, -diF/dt = 100 A/µs
VR = 100 V, TVJ = 100°C
IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C
a
dS
dA
Max. allowable acceleration
creeping distance on surface (pin to heatsink)
strike distance in air
(pin to heatsink)
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
• Low noise switching
Dimensions in mm (1 mm = 0.0394")
1.07
V
8.2 mΩ
0.8 K/W
0.2 K/W
7
40
50
11.2
9.7
15
A
ns
m/s2
mm
mm
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
241
Data according to IEC 60747 refer to a single diode unless otherwise stated
① for resistive load at bridge output.
1-2
B3
VUE 130-12NO7
100
10
A
µC
80
Qr
IF
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
60
100
TVJ = 100°C
TVJ = 100°C
A
VR = 600 V
8
VR = 600 V
80
IRM
IF = 30 A
6
IF = 30 A
IF = 15 A
60
IF = 15 A
IF = 7.5 A
IF = 7.5 A
40
4
40
20
2
20
DWLP55-12
0
0
1
2
VF
V
DWLP55-12
0
100
3
Fig. 1 Forward current IF versus VF
2,0
200
400
280
120
TVJ = 100°C
TVJ = 100°C
tfr
VR = 600 V
VR = 15 A
V
VFR
240
IF = 30 A
B3
600 A/µs
800 1000
-diF/dt
Fig. 3 Peak reverse current IRM
versus -diF/dt
trr
Kf
0
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
ns
1,5
DWLP55-12
0
A/µs 1000
-diF/dt
VFR
1,2
µs
tfr
80
0,8
40
0,4
IF = 15 A
1,0
IF = 7.5 A
IRM
200
0,5
Qr
DWLP55-12
DWLP55-12
0,0
0
40
80
120 C 160
DWLP55-12
160
0
200
400
TVJ
600
800 1000
A/µs
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
0
0
200
400
0,0
600 A/µs
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
1
K/W
ZthJC
0,1
0,01
0,0001
VUE130-12
0,001
0,01
0,1
s
1
10
t
Fig. 7 Typical transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
241
NOTE: Fig. 2 to Fig. 6 shows typical values
2-2