SEMICONDUCTOR KDR729 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K H F Small Package : USC. A IO=200mA rectification possible. 1 E Low Forward Voltage : VF(4)=0.43V(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT VRM 30 V Maximum (Peak) Reverse Voltage Reverse Voltage VR 30 V Maximum (Peak) Forward Current IFM 300 mA Average Forward Current IO 200 mA IFSM 1 A Power Dissipation PD 200* mW Junction Temperature Tj 125 Tstg -55 125 Surge Current (10ms) Storage Temperature Range DIM A MILLIMETERS _ 0.1 2.50 + _ 0.05 1.25 + _ 0.05 0.90 + B C M D M E 0.30+0.06/-0.04 _ 0.05 1.70 + MIN 0.17 _ 0.03 0.126 + 0~0.1 1.0 MAX _ 0.05 0.15 + F G H I 1. ANODE 2. CATHODE J K L M _ 0.05 0.4 + 2 +4/-2 4~6 USC * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm. Marking Type Name UM ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage ) SYMBOL TEST CONDITION MIN. TYP. MAX. VF(1) IF=1mA - 0.22 - VF(2) IF=10mA - 0.29 - VF(3) IF=100mA - 0.38 - VF(4) IF=200mA - 0.43 0.55 UNIT V Reverse Current IR VR=30V - - 50 A Total Capacitance CT VR=0V, f=1MHz - 50 - pF 2003. 2. 25 Revision No : 4 1/2 KDR729 10 - VF IR 10 Ta=25 C 2 REVERSE CURRENT I R (µA) FORWARD CURRENT I F (mA) IF 10 1 10 -1 10 -2 10 -3 10 -4 0 100 200 300 400 500 Ta=25 C 5 1 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) FORWARD VOLTAGE V F (mV) CT - VR - VR TOTAL CAPACITANCE C T (pF) 100 Ta=25 C f=1MHz 50 10 5 0 5 10 15 20 25 30 REVERSE VOLTAGE V R (V) 2003. 2. 25 Revision No : 4 2/2