T-1 (3mm) INFRA-RED EMITTING DIODE L-34F3BT Description Features ! MECHANICALLY AND SPECTRALLY MATCHED F3 Made with Gallium Arsenide Infrared Emitting diodes. TO THE L-32P3C PHOTOTRANSISTOR. ! BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAA4947 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:DEC/27/2002 DRAWN:Y.H.LI PAGE: 1 OF 3 Selection Guide P ar t N o . L-34F3BT Dic e Iv (m c d ) @ 20 m A *50m A L en s Ty p e GaAs V i ew i n g An g l e Min . Ty p . 2θ1/2 1.6 10 50° *7 *20 50° BLUE TRANSPARENT Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA. Electrical / Optical Characteristics at TA=25°°C P ar am et er P/N Sy m b o l Ty p . Max . Un it Co n d itio n Forward Voltage F3 VF 1.2 1.6 V IF = 2 0 m A Reverse Current F3 IR - 10 uA V R= 5 V Capacitance F3 C 90 - pF V F = 0 V;f= 1 M Hz Peak Spectral Wavelength F3 λP 940 - nm IF = 2 0 m A Spectral Bandwidth F3 ∆λ1/2 50 - nm IF = 2 0 m A Absolute Maximum Ratings at TA=25°°C P ar am et er Sy m b o l F3 F3 Un its Power Dissipation PT 100 mW Forward Current IF 50 mA Peak Forward Current[1] i FS 1.2 A Reverse Voltage VR 5 V Operating Temperature TA -40~ +85 °C TSTG -40~ +85 °C Storage Temperature 260°C For 5 Seconds Lead Solder Temperature[2] Notes: 1. 1/100 Duty Cycle,10us Pulse Width. 2. 2mm below package base. SPEC NO: DSAA4947 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:DEC/27/2002 DRAWN:Y.H.LI PAGE: 2 OF 3 L-34F3BT SPEC NO: DSAA4947 APPROVED: J.LU REV NO: V.2 CHECKED: Allen Liu DATE:DEC/27/2002 DRAWN:Y.H.LI PAGE: 3 OF 3