NEC NEZ1011-2E

DATA SHEET
N-CHANNEL GaAs MESFET
NEZ1011-2E, NEZ1414-2E
2W X, Ku-BAND POWER GaAs MESFET
DESCRIPTION
The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high
output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with
only a 50 Ω external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The
device incorporates a WSi (tungsten silicide) gate structure for high reliability.
FEATURES
• High Output Power : Po (1 dB) = +34.0 dBm typ.
• High Linear Gain
: 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)
• High Efficiency
: 30 % typ.
• Input and Output Internally Matched for Optimum performance
ORDERING INFORMATION
Part Number
NEZ1011-2E
NEZ1414-2E
Package
T-78
Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NEZ1011-2E, NEZ1414-2E)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Symbol
Ratings
Unit
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
–7
V
Drain Current
IDS
3.0 (NEZ1011-2E)
2.5 (NEZ1414-2E)
A
Gate Forward Current
IGF
+20
mA
Gate Reverse Current
IGR
–20
mA
Total Power Dissipation
PT
15
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
–65 to +175
°C
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice.
Document No. P13725EJ1V0DS00 (1st edition)
Date Published September 1998 N CP(K)
Printed in Japan
©
1998
NEZ1011-2E, NEZ1414-2E
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Note
Gate Resistance
Symbol
Test Condition
MIN.
TYP.
MAX.
Unit
9.0
9.0
9.0
V
Gcomp
3
dB
Tch
+130
°C
VDS
200
1000
1000
Ω
MIN.
TYP.
MAX.
Unit
Rg
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-2E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS
VDS = 1.5 V, VGS = 0 V
0.7
1.6
2.5
A
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 10 mA
–2.5
–1.3
–0.5
V
Gate to Drain Breakdown Voltage
BVGD
IGD = 10 mA
15
5.5
Thermal Resistance
Rth
Channel to Case
Linear Gain
GL
f = 10.7, 11.2, 11.7 GHz
VDS = 9.0 V
IDS = 0.7 A (RF OFF)
Rg = 1 kΩ
Output Power at 1 dB Gain Comp.
Po (1 dB)
Drain Current at 1 dB Gain Comp.
IDS (1 dB)
Power Added Efficiency at 1 dB
Gain Compression Point
η add (1 dB)
3rd Order Intermodulation
Distortion
IM3
V
7.0
°C/W
8.0
8.5
dB
33.0
34.0
dBm
0.8
Pout = +27.5 dBm (2 tone)
1.0
A
30
%
–40
dBc
[NEZ1414-2E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Test Conditions
MIN.
TYP.
MAX.
Unit
Saturated Drain Current
IDSS
VDS = 1.5 V, VGS = 0 V
0.7
1.6
3.0
A
Pinch-off Voltage
Vp
VDS = 2.5 V, IDS = 10 mA
–3.0
–1.3
–0.5
V
Gate to Drain Breakdown Voltage
2
Symbol
BVGD
IGD = 10 mA
15
5.5
Thermal Resistance
Rth
Channel to Case
Linear Gain
GL
f = 14.0 to 14.5 GHz
VDS = 9.0 V
IDS = 0.7 A (RF OFF)
Rg = 1 kΩ
Output Power at 1 dB Gain Comp.
Po (1 dB)
Drain Current at 1 dB Gain Comp.
IDS (1 dB)
Power Added Efficiency at 1 dB
Gain Compression Point
η add (1 dB)
V
7.0
°C/W
7.0
7.5
dB
33.0
34.0
dBm
0.8
30
1.0
A
%
NEZ1011-2E, NEZ1414-2E
[NEZ1011-2E] TYPICAL CHARACTERISTICS (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
80
Pout
70
60
+30
50
η add
40
30
η add - Efficiency - %
Pout - Output Power - dBm
+35
+25
20
10
+20
0
+20
+25
Pin - Input Power - dBm
+30
TEST CONDITIONS
Vds : 9.0 (V)
Ids : 0.7 (A)
3
NEZ1011-2E, NEZ1414-2E
[NEZ1011-2E] TYPICAL S-PARAMETERS
Vds = 9.0 V, Ids = 0.7 A
Marker
START 9.5 GHz, STOP 13 GHz, STEP 100 MHz
1: 10.7 GHz
2: 11.7 GHz
S11
S12
1.0
+90°
2.0
0.5
+135°
+45°
1
1
∞
0
±180°
0°
2
2
–45°
–135°
–2.0
–0.5
–1.0
–90°
Rmax = 1
Rmax = 0.25
S21
S22
+90°
1.0
2.0
0.5
+135°
+45°
1
1
±180°
0°
2
0
∞
2
–45°
–135°
–2.0
–0.5
–90°
–1.0
Rmax = 5
4
Rmax = 1
NEZ1011-2E, NEZ1414-2E
[NEZ1011-2E] TYPICAL S-PARAMETERS
MAG. AND ANG.
Vds = 9.0 V, Ids = 0.7 A
FREQUENCY
GHz
S11
MAG.
S12
ANG.
MAG.
(deg.)
9.50
9.60
9.70
9.80
9.90
10.0
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
11.0
11.1
11.2
11.3
11.4
11.5
11.6
11.7
11.8
11.9
12.0
12.1
12.2
12.3
12.4
12.5
12.6
12.7
12.8
12.9
13.0
0.764
0.761
0.758
0.753
0.746
0.736
0.722
0.706
0.686
0.668
0.645
0.624
0.598
0.578
0.554
0.528
0.507
0.478
0.456
0.422
0.394
0.358
0.318
0.279
0.240
0.209
0.200
0.212
0.252
0.309
0.361
0.416
0.469
0.519
0.559
0.597
–167.277
–178.028
171.529
160.103
148.570
136.528
124.575
112.284
100.666
89.224
77.773
67.151
56.412
46.466
36.030
26.451
16.580
6.600
–3.277
–13.834
–24.217
–36.871
–49.672
–65.213
–84.430
–107.600
–138.676
–167.414
166.906
147.122
131.557
118.401
107.640
98.604
89.444
81.722
S21
ANG.
MAG.
(deg.)
0.015
0.016
0.016
0.017
0.021
0.024
0.028
0.032
0.035
0.040
0.044
0.050
0.054
0.059
0.062
0.066
0.070
0.074
0.075
0.079
0.084
0.086
0.096
0.096
0.100
0.105
0.097
0.103
0.098
0.095
0.105
0.097
0.102
0.106
0.082
0.088
–43.230
–65.634
–91.498
–118.516
–141.838
–171.701
167.511
144.823
121.478
105.970
87.091
70.741
54.078
37.806
21.296
6.098
–7.465
–22.940
–35.751
–49.149
–63.862
–77.583
–92.366
–107.789
–123.743
–138.506
–155.009
–170.320
175.893
160.769
143.930
131.537
116.588
99.572
84.259
66.604
S22
ANG.
MAG.
(deg.)
2.130
2.340
2.425
2.517
2.750
2.799
2.790
2.912
2.927
2.942
2.970
2.970
2.945
2.944
2.917
2.906
2.920
2.902
2.889
2.933
2.901
2.874
2.890
2.905
2.857
2.845
2.824
2.638
2.617
2.572
2.409
2.256
2.162
2.023
1.844
1.863
–95.531
–111.739
–123.950
–134.894
–151.673
–167.695
176.393
161.709
146.204
131.119
116.345
101.187
86.551
72.072
57.262
43.390
29.090
14.522
0.451
–14.070
–29.339
–43.606
–56.908
–73.786
–89.725
–105.536
–120.676
–138.590
–153.421
–167.311
174.881
158.493
143.945
130.613
116.717
102.174
ANG.
(deg.)
0.635
0.611
0.584
0.553
0.516
0.476
0.432
0.388
0.344
0.299
0.260
0.229
0.208
0.200
0.202
0.212
0.222
0.237
0.248
0.256
0.264
0.265
0.262
0.257
0.246
0.233
0.214
0.193
0.174
0.160
0.155
0.163
0.183
0.211
0.246
0.287
–83.968
–91.286
–98.187
–106.003
–114.652
–123.658
–133.644
–145.015
–157.688
–172.088
171.488
152.876
131.672
109.753
89.248
70.797
54.193
39.808
26.634
14.662
3.065
–8.418
–19.614
–31.209
–43.300
–55.965
–71.338
–87.955
–107.656
–130.767
–155.714
178.469
155.527
135.870
119.252
104.110
5
NEZ1011-2E, NEZ1414-2E
[NEZ1414-2E] TYPICAL CHARACTERISTICS (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT AND EFFICIENCY
vs. INPUT POWER
Pout
+35
80
60
+30
50
40
η add
+25
30
η add - Efficiency - %
Pout - Output Power - dBm
70
20
10
+20
0
+20
+25
Pin - Input Power - dBm
+30
TEST CONDITIONS
Vds : 9.0 (V)
Ids : 0.7 (A)
6
NEZ1011-2E, NEZ1414-2E
[NEZ1414-2E] TYPICAL S-PARAMETERS
Vds = 9.0 V, Ids = 0.7 A
Marker
START 12.5 GHz, STOP 16 GHz, STEP 100 MHz
1: 14.0 GHz
2: 14.5 GHz
S11
S12
1.0
+90°
2.0
0.5
+135°
+45°
1
2
0
∞
2
±180°
0°
1
–45°
–135°
–2.0
–0.5
–1.0
–90°
Rmax = 1
Rmax = 0.25
S21
S22
+90°
1.0
2.0
0.5
+135°
+45°
2
1
1
±180°
0°
2
0
∞
–45°
–135°
–2.0
–0.5
–90°
–1.0
Rmax = 5
Rmax = 1
7
NEZ1011-2E, NEZ1414-2E
[NEZ1414-2E] TYPICAL S-PARAMETERS
MAG. AND ANG.
Vds = 9.0 V, Ids = 0.7 A
FREQUENCY
GHz
S11
MAG.
S12
ANG.
MAG.
(deg.)
12.5
12.6
12.7
12.8
12.9
13.0
13.1
13.2
13.3
13.4
13.5
13.6
13.7
13.8
13.9
14.0
14.1
14.2
14.3
14.4
14.5
14.6
14.7
14.8
14.9
15.0
15.1
15.2
15.3
15.4
15.5
15.6
15.7
15.8
15.9
16.0
8
0.720
0.714
0.703
0.694
0.681
0.665
0.647
0.619
0.598
0.564
0.528
0.489
0.458
0.417
0.379
0.345
0.316
0.299
0.283
0.286
0.294
0.316
0.341
0.371
0.404
0.434
0.470
0.500
0.535
0.563
0.592
0.614
0.643
0.667
0.693
0.714
54.026
47.272
40.563
33.714
25.911
18.142
10.006
1.522
–7.303
–16.994
–25.513
–35.940
–46.827
–58.735
–71.139
–86.020
–100.664
–117.676
–135.202
–153.247
–171.013
172.686
157.476
143.634
130.878
119.410
107.612
96.950
86.060
75.185
64.542
54.164
43.880
33.519
24.111
14.872
S21
ANG.
MAG.
(deg.)
0.041
0.042
0.046
0.054
0.042
0.049
0.048
0.050
0.065
0.066
0.078
0.076
0.094
0.083
0.104
0.098
0.095
0.100
0.094
0.096
0.098
0.099
0.103
0.108
0.107
0.113
0.104
0.102
0.099
0.091
0.093
0.089
0.089
0.085
0.081
0.076
–23.488
–33.909
–49.053
–67.659
–75.730
–91.627
–106.322
–123.298
–121.906
–147.244
–144.394
–164.810
174.594
160.842
137.769
123.598
110.275
95.196
85.165
73.113
56.700
46.372
29.217
13.049
0.943
–17.401
–31.285
–45.363
–59.856
–74.474
–86.447
–101.479
–115.807
–129.917
–143.437
–159.317
S22
ANG.
MAG.
(deg.)
1.670
1.618
1.805
1.905
1.883
2.076
2.139
2.226
2.244
2.269
2.572
2.705
2.394
2.514
2.483
2.337
2.380
2.475
2.473
2.387
2.393
2.363
2.329
2.311
2.279
2.226
2.173
2.138
2.067
2.002
1.930
1.858
1.768
1.668
1.558
1.473
–12.914
–27.927
–33.613
–41.620
–59.438
–70.774
–85.459
–106.292
–117.709
–129.798
–146.964
–157.354
–172.475
172.741
160.220
143.589
130.321
115.146
100.169
85.738
72.248
58.619
44.378
30.331
15.402
0.717
–13.915
–28.618
–43.793
–58.791
–74.024
–88.826
–104.195
–119.138
–134.157
–148.375
ANG.
(deg.)
0.559
0.536
0.513
0.489
0.469
0.444
0.423
0.397
0.376
0.354
0.331
0.308
0.291
0.267
0.245
0.222
0.199
0.177
0.155
0.132
0.113
0.092
0.074
0.059
0.048
0.046
0.054
0.068
0.087
0.109
0.134
0.162
0.197
0.231
0.268
0.311
139.492
132.577
125.731
118.906
110.831
102.528
94.278
85.041
76.035
66.079
56.921
46.382
35.057
23.990
12.747
0.830
–10.034
–21.527
–33.131
–45.132
–57.855
–72.397
–89.862
–113.198
–143.105
–178.465
147.862
121.138
100.050
81.796
65.785
51.196
38.392
26.433
15.119
5.747
NEZ1011-2E, NEZ1414-2E
PACKAGE DIMENSIONS (UNIT: mm)
8.25 ±0.15
Gate
Source
9.7 ±0.13
2.74 ±0.1
R 0.65
Drain
13 ±0.1
16.5 ±0.13
3.0 ±0.2
1.8 ±0.1
9 ±0.3
0.2 MAX.
9
NEZ1011-2E, NEZ1414-2E
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions.
For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method
Partial Heating
Soldering Conditions
Recommended Condition Symbol
Pin temperature: 260°C
Time: 5 seconds or less (per pin row)
For details of recommended soldering conditions, please contact your local NEC sales office.
10
–
NEZ1011-2E, NEZ1414-2E
[MEMO]
11
NEZ1011-2E, NEZ1414-2E
Caution
The Great Care must be taken in dealing with the devices in this guide.
The reason is that the material of the devices is GaAs (Gallium Arsenide), which is
designated as harmful substance according to the law concerned.
Keep the law concerned and so on, especially in case of removal.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5