PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R279A 0.2 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power : PO (1 dB) = +23 dBm typ. • High Linear Gain : 16 dB typ. • High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz ORDERING INFORMATION (PLAN) Part Number NE650R279A-T1 Remark Package 79A Supplying Form 12 mm tape width, 1 kpcs/reel To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE650R279A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Operation in excess of any one of these parameters may result in permanent damage. Parameter Symbol Ratings Unit Drain to Source Voltage VDS 15 V Gate to Source Voltage VGSO –7 V Drain Current ID 0.3 A Gate Forward Current IGF 8 mA Gate Reverse Current IGR 8 mA Total Power Dissipation PT 2.1 W Channel Temperature Tch 150 °C Storage Temperature Tstg –65 to +150 °C Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Document No. P13678EJ1V0DS00 (1st edition) Date Published August 1998 N CP(K) Printed in Japan © 1998 NE650R279A RECOMMENDED OPERATING LIMITS Characteristics Drain to Source Voltage Gain Compression Channel Temperature Symbol Test Conditions MIN. TYP. MAX. Unit 6.0 6.0 V Gcomp 3.0 dB Tch +125 °C MAX. Unit VDS ELECTRICAL CHARACTERISTICS (TA = 25°C, Unless otherwise specified, using NEC standard test fixture.) Characteristics Symbol Test Conditions Saturated Drain Current IDSS VDS = 2.5 V, VGS = 0 V Pinch-off Voltage Vp VDS = 2.5 V, ID = 1 mA Gate to Drain Break Down Voltage Thermal Resistance Output Power at 1 dB Gain Compression Point Drain Current Power Added Efficiency Note 1 Linear Gain BVgd Rth PO (1 dB) ID ηadd Igd = 1 mA MIN. 150 –2.5 –0.5 40 f = 1.9 GHz, VDS = 6.0 V Rg = 30 Ω IDset = 50 mA (RF OFF) Note 2 15.0 Preliminary Data Sheet 60 °C/W 23.0 dBm 72 mA 45 % 16.0 dB 2. DC performance is 100% testing. RF performance is testing several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples. V V Notes 1. Pin = 0 dBm 2 mA 13 Channel to Case GL TYP. NE650R279A NE650R279A S-PARAMETERS TEST CONDITIONS: VDS = 6.0 V, IDset = 50 mA (Preliminary Data) S11 S21 S12 S22 freq. (MHz) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 1400 0.865 –103.4 5.788 133.2 0.070 53.2 0.403 –73.5 1500 0.861 –108.0 5.593 131.9 0.072 51.5 0.397 –76.7 1600 0.850 –112.1 5.439 130.8 0.073 51.1 0.392 –79.2 1700 0.839 –116.0 5.182 129.1 0.075 50.9 0.387 –82.1 1800 0.833 –120.5 5.026 129.1 0.078 50.6 0.382 –84.9 1900 0.827 –124.9 4.992 128.4 0.081 49.2 0.376 –87.5 2000 0.817 –129.4 4.888 125.6 0.082 47.2 0.368 –90.2 2100 0.809 –133.1 4.739 124.9 0.082 45.8 0.360 –93.0 2200 0.806 –137.7 4.628 123.6 0.081 45.6 0.349 –95.7 2300 0.795 –143.0 4.518 121.8 0.081 46.2 0.336 –98.5 2400 0.789 –148.3 4.403 119.9 0.083 46.5 0.325 –101.6 2500 0.781 –153.4 4.383 118.2 0.086 46.0 0.311 –104.9 2600 0.778 –157.5 4.348 116.6 0.087 44.3 0.300 –107.6 2700 0.779 –162.9 4.065 115.8 0.087 42.7 0.288 –110.5 2800 0.778 –167.0 3.910 113.8 0.085 42.2 0.276 –113.5 2900 0.778 –172.1 3.763 113.1 0.084 42.1 0.264 –117.3 3000 0.781 –176.7 3.632 112.8 0.083 41.4 0.256 –121.0 Preliminary Data Sheet 3 NE650R279A APPLICATION CIRCUIT EXAMPLE (Unit: mm) VGS VDS Rg 1000 p Tantalum Condenser Tantalum Condenser 100 µ F 47 µ F λ /4 LINE λ /4 OPEN STUB 3 5 C1 4 INPUT 4 3 2 9 2 λ /4 OPEN STUB 5 4 R1 1 7.5 21 2 4 4 10 C2 3 8 7 2 50 Ω LINE OUTPUT GND f = 1.9 GHZ VDS = 6 V IDset = 50 mA (RF OFF) 4 C1 = 30 pF C2 = 30 pF R1 = 5.1 Ω Rg = 30 Ω Preliminary Data Sheet Substrate: Teflon glass (ε r = 2.6) t = 0.8 mm NE650R279A 79A Package Dimensions (Unit: mm) 1.5 ±0.2 4.2 max. Source Gate Drain 1.2 max. 1.0 max. 4.4 max. 0.8 ±0.15 Drain 0.6 ±0.15 5.7 max. Gate Source 0.4 ±0.15 0.8 max. 3.6 ±0.2 0.9 ±0.2 0.2 ±0.1 5.7 max. Bottom View 79A Package Recommended P.C.B. Layout (Unit: mm) 4.0 1.7 Stop up the hole with a rosin or something to avoid solder flow. Gate 0.5 1.0 1.2 5.9 Drain Source through hole φ 0.2 × 33 0.5 0.5 6.1 Preliminary Data Sheet 5 NE650R279A RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Note Count: 2, Exposure limit : None Partial Heating Pin temperature: 260°C Time: 5 seconds or less (per pin row) Note Exposure limit : None Recommended Condition Symbol IR35-00-2 – Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). 6 Preliminary Data Sheet NE650R279A [MEMO] Preliminary Data Sheet 7 NE650R279A Caution The Great Care must be taken in dealing with the devices in this guide. The reason is that the material of the devices is GaAs (Gallium Arsenide), which is designated as harmful substance according to the law concerned. Keep the law concerned and so on, especially in case of removal. The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5