NJG1105F Ver 1 12/25’99 TENTATIVE 1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.9/2.1GHz digital cellular phone handsets such as PCS and WCDMA. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. nFEATURES lLow voltage operation lLow current consumption lSmall Package [1.8GHz Band] lHigh small signal gain lLow Noise Figure lHigh Input IP3 [1.9GHz Band] lHigh small signal gain lLow Noise Figure lHigh Input IP3 [2.1GHz Band] lHigh small signal gain lLow Noise Figure lHigh Input IP3 nPACKAGE OUTLINE NJG1105F +2.9V typ. 6mA typ. MTP6 (Mount Size: 2.8x2.9x1.2mm) 20dB typ. @f=1860MHz 1.3dB typ. @f=1860MHz -3dBm typ. @f=1860.0+1860.1MHz 20dB typ. @f=1960MHz 1.3dB typ. @f=1960MHz -2dBm typ. @f=1960.0+1960.1MHz 16dB typ. @f=2140MHz 1.3dB typ. @f=2140MHz 0dBm typ. @f=2140.0+2140.1MHz nPIN CONFIGURATION Orientation Mark (Top View) 1 6 Pin connection 2 5 3 4 1.VDD 2.GND 3.RF OUT 4.RF IN 5.GND 6.EXTCAP -1- NJG1105F nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage SYMBOL VDD Input Power Power Dissipation Operating Temp. Storage Temp. Pin PD Topr Tstg (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6.5 V CONDITIONS VDD=2.9V +15 150 -40~+85 -55~+125 dBm mW °C °C nELECTRICAL CHARACTERISTICS 1 (1.8GHz Band) (VDD=2.9V, f=1860MHz, Ta=+25°C, Zs=Zl=50Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 1840 1860 1870 MHz Drain Voltage Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point Output 3rd Order Intercept Point LNAIN Port VSWR LNAOUT Port VSWR STABILITY VDD IDD Gain Gflat NF RF OFF f=1840~1870MHz P-1dB 2.7 - 2.9 6.0 5.5 8.0 V mA 17.0 - 20.0 0.5 1.3 23.0 1.0 1.6 dB dB dB +2.0 +4.0 - dBm - dBm IIP3 f=1860.0+1860.1MHz -5.0 -3.0 OIP3 f=1860.0+1860.1GHz +15 +17 - 1.5 1.5 VSWRi VSWRo Input and output terminal: open or short, No RF input, Ta=20~80°C, freq<20GHz Spurious: -60dBm max. No return gain NOTE: External circuits are required to get electrical characteristics Above at specified frequency. -2- 2.0 2.0 NJG1105F nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band) (VDD=2.9V, f=1960MHz, Ta=+25°C, Zs=Zl=50Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 1930 1960 1990 MHz Drain Voltage Operating Current Small Signal Gain Gain Flatness VDD IDD Gain Gflat Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point Output 3rd Order Intercept Point LNAIN Port VSWR LNAOUT Port VSWR STABILITY 2.7 17.0 - 2.9 6.0 20.0 0.5 5.5 8.0 23.0 1.0 V mA dB dB NF - 1.3 1.6 dB P-1dB +3.0 +5.0 - dBm - dBm RF OFF f=1930~1990MHz IIP3 f=1960.0+1960.1MHz -4.0 -2.0 OIP3 f=1960.0+1960.1MHz +16 +18 VSWRi - 1.5 2.0 VSWRo - 1.5 2.0 Input and output terminal: open or short, No RF input, Ta=20~80°C, freq<20GHz Spurious: -60dBm max. No return gain NOTE: External circuits are required to get electrical characteristics Above at specified frequency. -3- NJG1105F nELECTRICAL CHARACTERISTICS 3 (2.1GHz Band) (VDD=2.9V, f=2140MHz, Ta=+25°C, Zs=Zl=50Ω) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 2110 2140 2170 MHz Drain Voltage Operating Current Small Signal Gain Gain Flatness VDD IDD Gain Gflat Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point Output 3rd Order Intercept Point LNAIN Port VSWR LNAOUT Port VSWR STABILITY 2.7 13.0 - 2.9 6.0 16.0 0.5 5.5 8.0 19.0 1.0 V mA dB dB NF - 1.3 1.6 dB P-1dB +3.0 +5.0 - dBm - dBm RF OFF f=2110~2140MHz IIP3 f=2140.0+2140.1MHz -2.0 0.0 OIP3 f=2140.0+2140.1MHz +17 +19 VSWRi - 1.5 2.0 VSWRo - 1.5 2.0 Input and output terminal: open or short, No RF input, Ta=20~80°C, freq<20GHz Spurious: -60dBm max. No return gain NOTE: External circuits are required to get electrical characteristics Above at specified frequency. -4- NJG1105F nPACKAGE OUTLINE (MTP6) Lead material : Copper Lead surface finish : Solder plating Molding material : Epoxy resin Unit : mm Weight : 14mg Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. -5-