NTE6403 Integrated Circuit Silicon Bilateral Switch (SBS) Description: The NTE6403 is a silicon planer, monolithic integrated circuit having the electrical characteristics of a bilateral thyristor. This device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient and excellently matched characteristics in both directions. A gate lead is provided to eliminate rate effect and to obtain triggering at lower voltages. The NTE6403 is specifically designed and characterized for applications where stability of switching voltage over a wide temperature range and well matched bilateral characteristics are an asset. It is ideally suited for half wave and full wave triggering in low voltage SCR and TRIAC phase control circuits. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Peak Recurrent Forward Current (PW = 10µs, Duty Cycle = 1%, TA = +25°C) . . . . . . . . . . . . . . . 1A Peak Non–Recurrent Forward Current (PW = 10µs, TA = +25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW DC Forward Anode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175mA DC Gate Current (Note 1, Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Note 1. Derate linearly to zero at +125°C. Note 2. This rating applicable only on OFF state. Maximum gate current in conducting state limited by maximum power rating. Electrical Characteristics: (TA = +25°C, Note 3 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Switching Voltage VS 7.5 – 9.0 V Switching Current IS – – 120 µA Absolute Switching Voltage Difference |VS2 – VS1| – – 200 mV Absolute Switching Current Difference |IS2 – IS1| – – 10 µA Holding Current IH – – .5 mA OFF State Current IB TA = +25°C – – 0.1 µA TA = +85°C – – 10.0 µA VF = 5V Temperature Coefficient of Switching Voltage TC TA = –55° to +85°C – ±0.05 – %/°C ON State Forward Voltage Drop VF IF = 175mA – – 1.7 V Forward Gate Current to Trigger IGF VF = 5V, RL = 1kΩ – – 100 µA Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply in either direction of current flow. Electrical Characteristics (Cont’d): (TA = +25°C, Note 3 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Peak Pulse Amplitude Vo 3.5 – – V Turn–On Time ton – – 1.0 µs Turn–Off Time toff – – 30.0 µs Note 3. This device is a symmetrical negative resistance diode. All electrical limits shown above apply in either direction of current flow. A2 G A1 SBS CIRCUIT SYMBOL .135 (3.45) Min .210 (5.33) Max .140 (3.55) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max .190 (4.82) Min .065 (1.65) .245 (6.23) Max .500 (12.7) Min A1 G A2 .018 (0.45) Dia Max .100 (2.54) .050 (1.27) A1 G A2 .100 (2.54) .105 (2.67) Max .205 (5.2) Max .165 (4.2) Max .105 (2.67) Max .200 (5.08) Max