Transistors IC SMD Type Silicon NPN Epitaxial Planar Type 2SC3547A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Transition frequency is high and dependent on current excellently. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 Tstg -55 to +125 Storage temperature range Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB =10 V, IE = 0 0.1 ìA Emitter cut-off current IEBO VEB = 1 V, IC = 0 1.0 ìA Collector-emitter breakdown voltage DC current gain Transition frequency Output capacitance V(BR) CEO IC = 1 mA, IB = 0 Min VCE = 10 V, IC = 5 mA 35 fT VCE = 10 V, IC= 10 mA 3 VCB = 10 V, IE =0, f =1 MHz Cc rbb’ VCB = 10 V, IC = 5 mA, f = 30 MHz Typ 12 hFE Cob Collector-base time constant Testconditons V 130 4 GHz 1.05 1.35 pF 4.5 10 ps Marking Marking HI www.kexin.com.cn 1