GaAlAs Infrared Emitting Diodes VTE7172, 7173 Molded Lateral Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 7 LATERAL CHIP SIZE: .011" x .011" DESCRIPTION These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic and contains a high efficiency, 880 nm, GaAlAs IRED die. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30°C: Maximum Continuous Current: Derate above 30°C: Peak Forward Current, 10 µs, 100 pps: Temp. Coefficient of Power Output (Typ.): Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 µs Fall: 1.0 µs Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) -40°C to 85°C 100 mW 1.82 mW/°C 50 mA 0.91 mA/°C 2.5 A -.8%/°C 5.0V 10 µA 880 nm 14 pF 260°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110) Output Irradiance Part Number Ee Forward Drop Radiant Intensity Condition mW/cm2 Half Power Beam Angle Total Power Test Current VF Ie PO IFT @ IFT Volts Typ. Max. distance Diameter mW/sr mW θ1/2 Min. Typ. mm mm Min. Typ. mA (Pulsed) VTE7172 0.4 0.6 16.7 4.6 1.1 2.5 20 1.3 1.8 ±25° VTE7173 0.6 0.8 16.7 4.6 1.7 5.0 20 1.3 1.8 ±25° Typ. Refer to General Product Notes, page 2. PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 122