2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS Copyright © 1998, Power Innovations Limited, UK AUGUST 1998 TELECOMMUNICATION SYSTEM PRIMARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V(BR) DEVICE MINIMUM V(BO) MINIMUM MAXIMUM V V V ±245 ±265 ±400 2EL3 ±200 ±265 2EL4 ±215 ±265 2EL2 ● V(BO) T(A) R(B) MD4XANA Rated for International Surge Wave Shapes ITU-T K28 GR-974-CORE (10/700) (10/1000) ITSP ITSP DEVICE CELL PACKAGE (SIDE VIEW) A A 2EL2 ±125 ±100 2EL3 ±125 ±100 2EL4 ±125 ±100 device symbol T SD4XAA R Terminals T and R correspond to the alternative line designators of A and B ● Gas Discharge Tube (GDT) Replacement ● Planar Passivated Junctions in a Protected Cell Construction Low Off-State Current Extended Service Life ● Soldered Copper Electrodes High Current Capability Cell Construction Short Circuits Under Excessive Current Conditions description These devices are primary protector components for semiconductor arrester assemblies intended to meet the generic requirements of Bellcore GR-974-CORE (November 1994) or ITU-T Recommendation K28 (03/93). To conform to the specified environmental requirements, the 2ELx must be installed in a housing which maintains a stable microclimate during these tests (e.g. FIGURE I.1/K28). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. This 2ELx range consists of three voltage variants to meet various maximum system voltage levels. They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These monolithic protection devices are constructed using two nickel plated copper electrodes soldered to each side of the silicon chip. This packaging approach allows heat to be removed from both sides of the silicon, resulting in the doubling of the devices thermal capacity, enabling a power line cross current capability of 10 A rms for 1 second. One of the 2ELx’s copper electrodes is specially shaped to promote a progressive shorting action (at 50/60 Hz currents greater than 60 A). The assembly must hold the 2ELx in compression, so that the cell electrodes can be forced together during overstress testing. Under excessive power line cross conditions the 2ELx will fail short circuit, providing maximum protection to the equipment. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. Manufactured by TI using silicon designed and manufactured by Power Innovations, Bedford, UK. 1 2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS AUGUST 1998 absolute maximum ratings, TA = 25°C (unless otherwise noted) RATING SYMBOL VALUE UNIT Non-repetitive peak on-state pulse current (see Notes 1 and 2) 5/310 µs (ITU-T K28, 10/700 µs voltage wave shape) 10/1000 µs (GR-974-CORE, 10/1000 µs voltage wave shape) 2EL2 -20°C to 65°C 2EL3 -20°C to 65°C 2EL4 -20°C to 65°C 2EL2 -20°C to 65°C 100 2EL3 -20°C to 65°C 100 2EL4 -20°C to 65°C 100 2EL2 -40°C to 65°C 2EL3 -20°C to 65°C 2EL4 -40°C to 65°C 125 125 ITSP A 125 Non-repetitive peak on-state current (see Note 1) full sine wave, 50/60 Hz, 1 s Junction temperature Storage temperature range 10 10 ITSM A rms 10 TJ -40 to +150 °C Tstg -40 to +150 °C NOTES: 1. The surge may be repeated after the device has returned to thermal equilibrium. 2. Most PTT’s quote an unloaded voltage waveform. In operation the 2ELx essentially shorts the generator output. The resulting loaded current waveform is specified. electrical characteristics for the T and R terminals, TA = 25°C (unless otherwise noted) PARAMETER V(BR) TEST CONDITIONS Breakdown Voltage I(BR) = ±20 mA, (see Note 3) MIN 2EL2 -40°C to 65°C ±245 2EL2 +15°C to 25°C ±265 2EL3 +15°C to 25°C -40°C to 65°C V(BO) Breakover voltage dv/dt = ±0.2 V/s, RSOURCE > 200 Ω Impulse breakover voltage Impulse reset ID Off-state current ±400 2EL4 25°C -20°C to 65°C ±400 di/dt ≤ 10 A/µs 2EL3 -20°C to 65°C ±350 2EL4 -20°C to 65°C ±350 Sources are 52.5 V O.C., 260 mA S.C. and 2EL2 -20°C to 65°C 20 135 V O.C., 200 mA S.C. 2EL3 -20°C to 65°C 20 on-state current 25 A, 10/1000 µs impulse 2EL4 -20°C to 65°C 20 VD = ±50 V (see Note 4) 2EL2 -40°C to 65°C ±0.5 2EL3 -20°C to 65°C ±0.5 2EL4 -40°C to 65°C ±0.5 2EL2 -40°C to 65°C ±10 2EL3 15°C to 25°C ±1 2EL4 0°C to 65°C ±10 2EL2 -40°C to 65°C 150 2EL3 -20°C to 65°C 150 2EL4 -40°C to 65°C 150 Vd = 1 Vrms, VD = 0, Off-state capacitance ±215 NOTES: 3. Meets Bellcore GR-974-CORE Issue 1, November 1994 - Rated Voltage Test (4.7) 4. This device is sensitive to light. Suggest that this parameter be measured in a dark environment PRODUCT 2 V ±265 2EL2 VD = ±200 V INFORMATION UNIT V 100 V/µs ≤ dv/dt ≤ ±1000 V/µs, f = 1 MHz, Coff MAX ±200 -20°C to 65°C V(BO) TYP ±265 V ms µA pF 2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS AUGUST 1998 PARAMETER MEASUREMENT INFORMATION +i Quadrant I ITSP Switching Characteristic ITSM V(BO) VD -v V(BR) I(BR) ID ID I(BR) VD +v V(BR) V(BO) ITSM Quadrant III ITSP Switching Characteristic -i PMXXAG Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL PRODUCT INFORMATION 3 2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS AUGUST 1998 MECHANICAL DATA cell package BUTTON CELL 2ELx 0,508 (0.020) MAX Top Electrode Sleeve 2,31 (0.091) 2,11 (0.083) Bidirectional Silicon Chip 0,178 (0.007) MAX 2xø ø Bottom Electrode 1,65 (0.065) 1,27 (0.050) 4,27 (0.168) 3,76 (0.148) ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES MDXXAK PRODUCT 4 INFORMATION 2EL2, 2EL3, 2EL4 BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS AUGUST 1998 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilised to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1998, Power Innovations Limited PRODUCT INFORMATION 5