TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● 80 W at 25°C Case Temperature ● 7 A Continuous Collector Current ● 10 A Peak Collector Current ● Maximum VCE(sat) of 2 V at IC = 5 A ● ICEX(sus) 7 A at rated V(BR)CEO JUNE 1973 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP150 Collector-base voltage (IE = 0) TIP151 VCBO 350 V 400 TIP150 TIP151 UNIT 300 TIP152 Collector-emitter voltage (IB = 0) VALUE 300 VCEO TIP152 350 V 400 V EBO 8 V IC 7 A ICM 10 A IB 1.5 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Tj -65 to +150 °C Tstg -65 to +150 °C TL 260 °C Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 5 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CBO V (BR)CEO ICEO ICEX(sus) IEBO hFE VCE(sat) V BE(sat) VEC hfe TEST CONDITIONS Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter cut-off current Collector-emitter sustaining current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage IC = 1 mA MIN IE = 0 IC = 10 mA IB = 0 (see Note 4) TIP150 300 TIP151 350 TIP152 400 TIP150 300 TIP151 350 TIP152 400 IB = 0 TIP150 250 TIP151 250 V CE = 400 V IB = 0 TIP152 250 VEB = 8V 7 15 VCE = 5V IC = 2.5 A V CE = 5V IC = 5A V CE = 5V IC = 7A 10 mA IC = 1A IB = 100 mA IC = 2A IB = 250 mA IC = 5A IB = 50 15 1.5 (see Notes 4 and 5) 1.5 IC = 2A 5A IE = 7A IB = 0 (see Notes 4 and 5) VCE = 5V IC = 0.5 A f = 1 kHz 200 VCE = 5V IC = 0.5 A f = 1 MHz 10 IE = 0 f = 1 MHz Small signal forward Cob Output capacitance current transfer ratio VCB = 10 V V 2 IC = |hfe| mA 150 (see Notes 4 and 5) IB = 100 mA current transfer ratio µA A IC = 0 IB = 250 mA Small signal forward V IB = 0 VCLAMP = V(BR)CEO UNIT V VCE = 300 V saturation voltage forward voltage MAX V CE = 350 V Base-emitter Parallel diode TYP 2.2 (see Notes 4 and 5) 2.3 V 3.5 V 100 pF NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W Cθ C Thermal capacitance of case 0.9 J/°C inductive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP MAX UNIT tsv Voltage storage time 3.9 tsi Current storage time 4.7 µs trv Voltage transition time 1.2 µs tti Current transition time 1.2 µs txo Cross-over time 2.0 µs IC = 5 A V (clamp) = V(BR)CEO IB(on) = 250 mA RBE = 47 Ω Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION µs TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 24 V L = 7 mH Vz Driver and Current Limiting Circuit TUT 0.22 µ F 100 Ω 0.2 Ω Figure 1. Functional Test Circuit 16.6 ms 11.6 ms Input Signal 0 IB Base Current 0 IC Collector Current 0 Collector Emitter Voltage 0 Vclamp 24 V Figure 2. Functional Test Waveforms 40 V 12 V 0.056 Ω 7 mH IRF140 BY205-600 V in = 10 V 1 kΩ TUT Adjust for IB V clamp 47 Ω Figure 3. Switching Test Circuit PRODUCT INFORMATION 3 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE = 5 V t p = 300 µs, duty cycle <2% TC = 125°C TC = 25°C TC = -30°C 1000 100 10 0·4 1·0 VCE(sat) - Collector-Emitter Saturation Voltage - V TCD150AA 10000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCD150AB 10 IC / IB = 20 tp = 300 µs, duty cycle < 2% 1·0 TC = 125°C TC = 25°C TC = -30°C 0·1 0·4 10 1·0 IC - Collector Current - A IC - Collector Current - A Figure 4. Figure 5. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 2·5 2·0 1·5 TC = -30°C TC = 25°C TC = 125°C 1·0 10 IC - Collector Current - A Figure 6. PRODUCT INFORMATION TCD150AD 1000 ICEO - Collector Cut-off Current - µA VBE(sat) - Base-Emitter Saturation Voltage - V IC / IB = 20 t p = 300µs, duty cycle < 2% 1·0 0·4 4 COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP150AC 3·0 10 VCE = 400 V IB = 0 100 10 1·0 -50 -25 0 25 50 75 TC - Case Temperature - °C Figure 7. 100 125 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAD150AA 10 1·0 0.1 t p = 0.1 ms tp = 1 ms tp = 5 ms DC Operation 0·01 1·0 TIP150 TIP151 TIP152 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 8. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TID150AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 9. PRODUCT INFORMATION 5 TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE TIP150, TIP151, TIP152 NPN SILICON POWER DARLINGTONS JUNE 1973 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7