POINN TISP4360H3BJ

TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright © 1999, Power Innovations Limited, UK
JUNE 1999
OVERVOLTAGE PROTECTOR FOR ADSL MODEMS & SPLITTERS
●
Matched to POTS + ADSL Voltages
- Working Voltage, VDRM . . . . . . . . . . . . .290 V
- Protection Voltage, V(BO). . . . . . . . . . . .360 V
●
High FCC, Bellcore & ITU Surge Ratings
STANDARD
2/10 µs
GR-1089-CORE
500
FCC Part 68
250
10/700 µs
●
ITU-T K20/21
FCC Part 68
R(B) 1
2 T(A)
ITSP
WAVE SHAPE
10/160 µs
SMBJ PACKAGE
(TOP VIEW)
A
MDXXBG
device symbol
200
T
10/560 µs
FCC Part 68
160
10/1000 µs
GR-1089-CORE
100
High UL 1950, Bellcore & ITU AC Capability
STANDARD
UL 1950
(ANNEX NAC)
GR-1089-CORE
ITU-T K20/21
SD4XAA
APPLIED AC ‘4360 IT(OV)M LIMIT
A RMS
s
40
0.04
7
4.2
2.2
SURVIVES
60
0.015
30
0.08
15
0.48
2.2
SURVIVES
23
0.15
1
SURVIVES
R
Terminals T and R correspond to the
alternative line designators of A and B
●
Large creepage distance . . . . . . . . . 2.54 mm
●
Low Capacitance . . . . . . . . . . . . 24 pF @ 50 V
. . . . . . . . . . . . . .70 pF @ 0
description
The TISP4360H3BJ is designed to limit overvoltages on equipment used for telephone lines carrying POTS
(Plain Old Telephone System) and ADSL (Asymmetrical Digital Subscriber Line) signals. TISP4360H3BJ a.c.
overload limits are specified for designers to select the correct overcurrent protectors to meet safety
requirements, e.g. UL 1950.
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially
clipped by breakdown clamping. If sufficient current is available from the overvoltage, the breakdown voltage
will rise to the breakover level, which causes the device to switch into a low-voltage on-state condition. This
switching action removes the high voltage stress from the following circuitry and causes the current resulting
from the overvoltage to be safely diverted through the protector. The high holding (switch off) current prevents
d.c. latchup as the diverted current subsides.
The TISP4360H3BJ is guaranteed to voltage limit and withstand the listed international lightning surges in
both polarities. This high (H) current protection device is in a plastic SMBJ package (JEDEC DO-214AA with
J-bend leads) and supplied in embossed carrier reel pack. For alternative voltage and holding current values,
consult the factory.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
absolute maximum ratings, TA = 25°C (unless otherwise noted)
RATING
Repetitive peak off-state voltage, (see Note 1)
SYMBOL
VALUE
UNIT
VDRM
±290
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
500
8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator)
300
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
250
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
ITSP
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
220
200
A
200
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
200
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
160
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
100
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
55
16.7 ms (60 Hz) full sine wave
ITSM
1000 s 50 Hz/60 Hz a.c.
60
A
2.2
Maximum overload on-state current without open circuit, 50 Hz/60 Hz a.c.
0.015 s
60
0.04 s
40
0.08 s
IT(OV)M
0.15 s
A rms
7
4.2 s
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 200 A
Junction temperature
Storage temperature range
diT/dt
400
A/µs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
See Applications Information and Figure 9 for voltage values at lower temperatures.
Initially the TISP4360H3BJ must be in thermal equilibrium with TJ = 25°C.
The surge may be repeated after the TISP4360H3BJ returns to its initial conditions.
See Applications Information and Figure 10 for current ratings at other temperatures.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 7 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C
PRODUCT
2
23
15
0.48 s
NOTES: 1.
2.
3.
4.
5.
30
INFORMATION
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
electrical characteristics for the T and R terminals, TA = 25°C (unless otherwise noted)
PARAMETER
IDRM
V(BO)
TEST CONDITIONS
Repetitive peak offstate current
Breakover voltage
VD = VDRM
dv/dt = ±750 V/ms,
MIN
TYP
MAX
TA = 25°C
±5
TA = 85°C
±10
RSOURCE = 300 Ω
UNIT
µA
±360
V
±372
V
dv/dt ≤ ±1000 V/µs, Linear voltage ramp,
V(BO)
Impulse breakover
Maximum ramp value = ±500 V
voltage
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
RSOURCE = 300 Ω
I(BO)
Breakover current
dv/dt = ±750 V/ms,
VT
On-state voltage
IT = ±5 A, tW = 100 µs
Holding current
IT = ±5 A, di/dt = +/-30 mA/ms
IH
dv/dt
ID
Coff
Critical rate of rise of
off-state voltage
Off-state current
±0.15
Linear voltage ramp, Maximum ramp value < 0.85VDRM
VD = ±50 V
Off-state capacitance
±0.15
±0.6
A
±3
V
±0.6
A
±5
kV/µs
TA = 85°C
±10
f = 100 kHz,
Vd = 1 V rms, VD = 0,
70
84
f = 100 kHz,
Vd = 1 V rms, VD = -1 V
60
67
f = 100 kHz,
Vd = 1 V rms, VD = -2 V
55
62
f = 100 kHz,
Vd = 1 V rms, VD = -50 V
24
28
f = 100 kHz,
Vd = 1 V rms, VD = -100 V
22
26
TYP
MAX
µA
pF
thermal characteristics
PARAMETER
TEST CONDITIONS
MIN
EIA/JESD51-3 PCB, IT = ITSM(1000),
RθJA
Junction to free air thermal resistance
4-layer PCB, IT = ITSM(1000), TA = 25 °C
NOTE
113
TA = 25 °C, (see Note 6)
265 mm x 210 mm populated line card,
UNIT
°C/W
50
6: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
PRODUCT
INFORMATION
3
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
PARAMETER MEASUREMENT INFORMATION
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
VDRM
-v
IDRM
ID
VD
ID
IDRM
VD
VDRM
+v
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
PRODUCT
4
INFORMATION
PMXXAAB
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCHAG
100
1.10
NORMALISED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4HAF
VD = ±50 V
Normalised Breakover Voltage
|ID| - Off-State Current - µA
10
1
0·1
0·01
0·001
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
1.05
1.00
0.95
150
-25
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
200
150
TA = 25 °C
100
tW = 100 µs
TC4HACA
2.0
NORMALISED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4HAD
1.5
Normalised Holding Current
IT - On-State Current - A
150
Figure 3.
70
50
40
30
20
15
10
7
5
4
3
2
1.5
1
0.7
0
25
50
75
100 125
TJ - Junction Temperature - °C
1.0
0.9
0.8
0.7
0.6
0.5
1
1.5
2
3
4 5
VT - On-State Voltage - V
7
Figure 4.
PRODUCT
10
0.4
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
INFORMATION
5
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
TYPICAL CHARACTERISTICS
NORMALISED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4HABA
1
0.9
TJ = 25°C
Capacitance Normalised to VD = 0
0.8
Vd = 1 Vrms
0.7
0.6
0.5
0.4
0.3
0.2
0.5
1
2
3
5
10
20 30 50
VD - Off-state Voltage - V
Figure 6.
PRODUCT
6
INFORMATION
100150
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
RATING AND THERMAL INFORMATION
TI4HAC
30
MAXIMUM OVERLOAD ON-STATE CURRENT
vs
CURRENT DURATION
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
20
15
10
9
8
7
6
5
4
10
100
2
0·01
1000
t - Current Duration - s
Figure 7.
TI4HADA
0·1
1
10
t - Current Duration - s
100
700
600
0.99
1000
TC4HAA
BELLCORE 2/10
500
400
Impulse Current - A
0.98
Derating Factor
UL 1950 600 V rms
TESTS (1, 2 & 5)
IMPULSE RATING
vs
AMBIENT TEMPERATURE
vs
MINIMUM AMBIENT TEMPERATURE
0.97
0.96
IEC 1.2/50, 8/20
300
FCC 10/160
250
ITU-T 10/700
200
FCC 10/560
0.95
150
0.94
120
BELLCORE 10/1000
0.93
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 9.
PRODUCT
TISP4360H3BJ IT(OV)M
Figure 8.
VDRM DERATING FACTOR
1.00
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
10
8
7
6
5
3
2.5
1
RGEN = VGEN/IT(OV)M
15
4
2
VGEN = 600 Vrms, 50/60 Hz
30
25
20
3
1.5
0·1
TI4HAJ
70
60
50
40
I - RMS Current - A
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
100
90
-40 -30 -20 -10 0
10 20 30 40 50 60 70 80
TA - Ambient Temperature - °C
Figure 10.
INFORMATION
7
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
APPLICATIONS INFORMATION
deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage
between two conductors (Figure 11) or in multiples to limit the voltage at several points in a circuit (Figure 12).
Th3
Th1
Th1
Th2
Figure 11. TWO POINT PROTECTION
Figure 12. MULTI-POINT PROTECTION
In Figure 11, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This
configuration is normally used to protect circuits without a ground reference, such as modems. In Figure 12,
protectors Th2 and Th3 limit the maximum voltage between each conductor and ground to the ±V(BO) of the
individual protector. Protector Th1 limits the maximum voltage between the two conductors to its ±V(BO)
value. If the equipment being protected has all its vulnerable components connected between the conductors
and ground, then protector Th1 is not required.
impulse testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested
with various impulse wave forms. The table below shows some common values.
STANDARD
GR-1089-CORE
PEAK VOLTAGE
VOLTAGE
PEAK CURRENT
CURRENT
TISP4360H3BJ
SERIES
SETTING
WAVE FORM
VALUE
WAVE FORM
25 °C RATING
RESISTANCE
Ω
V
µs
A
µs
A
2500
2/10
500
2/10
500
1000
10/1000
100
10/1000
100
0
1500
10/160
200
10/160
250
0
FCC Part 68
800
10/560
100
10/560
160
0
(March 1998)
1500
9/720 †
37.5
5/320 †
200
0
1000
9/720 †
25
5/320 †
200
0
1500
0.5/700
37.5
0.2/310
200
0
5/310
200
0
I3124
ITU-T K20/K21
1500
4000
10/700
37.5
100
† FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
Series resistance can be added to cover situations where either the TISP4360H3BJ current rating will be
exceeded or excessive wiring currents result or both.
When a primary protector is used, the TISP4360H3BJ may operate before the primary protector. With the
TISP460H3BJ in a low voltage state, the primary protector is prevented from working. High currents, which
should have been carried by the primary protector, now flow through the wiring to the equipment and through
the TISP4360H3BJ. Interference and network equipment damage can occur, particularly if the currents are
diverted to the local ground. Protector co-ordination prevents this problem. A series resistor can be used to
develop a voltage drop large enough to activate the primary protector. If the primary protector was a gas
discharge tube (GDT) with a maximum d.c. sparkover of 400 V and the typical lightning impulse decay time
was several hundred microseconds (TISP4360H3BJ rating 200 A), a 2 Ω series resistor (400 V/200 A) would
PRODUCT
8
INFORMATION
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
be sufficient to achieve co-ordination. At peak currents of 200 A and above, the resistor would develop at least
400 V and GDT would switch and divert the current.
If the impulse generator current exceeds the protectors current rating then a series resistance can be used to
reduce the current to the protectors rated value and so prevent possible failure. The required value of series
resistance for a given waveform is given by the following calculations. First, the minimum total circuit
impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The
impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then
subtracted from the minimum total circuit impedance to give the required value of series resistance. In some
cases the equipment will require verification over a temperature range. By using the rated waveform values
from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range
of -40 °C to 85 °C.
a.c. testing
The protector can withstand currents applied for times not exceeding those shown in Figure 7. Currents that
exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive
Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used
to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In
some cases it may be necessary to add some extra series resistance to prevent the fuse opening during
impulse testing. The current versus time characteristic of the overcurrent protector must be below the line
shown in Figure 7. In some cases there may be a further time limit imposed by the test standard (e.g. UL
1459/1950 wiring simulator failure).
Safety tests require that the equipment fails without any hazard to the user. For the equipment protector, this
condition usually means that the fault mode is short circuit, ensuring that the following circuitry is not exposed
to high voltages. The ratings table and Figure 8 detail the earliest times when a shorted condition could occur.
Figure 8 shows how the protector current levels compare to UL 1950 levels. Only the UL 1950 600 V tests (1,
2 and 3) are shown as these have sufficient voltage to operate the protector. Tests 4 (<285 V peak, 2.2 A) and
5 (120 V rms, 25 A) are too low in voltage to operate the protector.
Figure 8 shows that the TISP4360H3BJ curve is very close or better than the UL 1950 test levels. Design
compliance is simply a matter of selecting an overcurrent protector which operates before the UL 1950 times
up to 1.5 s. Fuses such as the Littelfuse 436 series and 2AG (Surge Withstand type) series and Bussmann
TCP series have a 600 V capability for UL 1950. Fuses rated in the range of 0.5 A to 1.5 A will usually meet
the safety test requirements. However, the lower rated current value fuses may open on the type A surges of
FCC Part 68. Opening on a type A surge is not a test failure, but opening on a type B surge (37.5 A 5/320) is;
so the selected fuse must be able to withstand the type B surge.
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V,
-2 V -50 V and -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance
value by the factor given in Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency.
Above 10 MHz the effective capacitance is strongly dependent on connection inductance.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. If the maximum
system voltages are not known, then designers often used the voltages for the FCC Part 68 “B” ringer. The
“B” ringer has a d.c. voltage of 56.5 and a maximum a.c. ring voltage of 150 V rms. The resultant waveform is
shown in Figure 13. The maximum voltage is -269 V, but, because of possible wiring reversals, the protector
should have a working voltage of ±269 V minimum. The standard TISP4350H3BJ protector meets this
requirement with a working voltage, VDRM, of ±275 V and a protection voltage, V(BO), of ±350 V. Figure 14
shows the TISP4350H3BJ voltages relative to the POTS -269 V peak ringing voltage.
PRODUCT
INFORMATION
9
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
200 V
-230
-240
+156 V
-269 V
RINGING PEAK
-250
100 V
-260
-270
-275 V
WORKING VOLTAGE VDRM
-280
0
-290
-300
-56.5 V d.c.
-310
-100 V
TISP4350H3BJ
-320
-330
-340
-200 V
-350
PROTECTION VOLTAGE V(BO)
-350 V
-360
-269 V
AI4XAD
-300 V
AI4HAE
-370
Figure 13.
Figure 14.
The ADSL signal can be as high as ±15 V and this adds to the POTS signal making a peak value of -284 V.
This increased signal value of -284 V would be clipped by the TISP4350H3BJ, which only allows for a -275 V
signal. The TISP4360H3BJ has been specified to overcome this problem by having a higher working voltage
of ±290 V. Figure 15 shows the TISP4360H3BJ voltages relative to the -284 V peak ADSL plus POTS ringing
voltage. The ±15 V ADSL signal is shown as a grey band in Figure 15.
-230
-240
-284 V PEAK
ADSL + RINGING
-250
-260
-270
-280
-290
-290 V
WORKING VOLTAGE VDRM
-300
-310
-320
-330
TISP4360H3BJ
-340
-350
-360
-370
PROTECTION VOLTAGE V(BO)
-360 V
AI4HAF
Figure 15.
The recommended PCB pad layout for the TISP4360H3BJ SMB package (see mechanical section) gives a
creepage distance of 2.54 mm between the device terminals. This distance value allows compliance to the
minimum clearance values required by UL 1950 for operational, basic and supplementary insulation and
creepage values for pollution degree 1.
PRODUCT
10
INFORMATION
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51
standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3)
cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the
standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller
than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller
76.2 mm x 114.3 mm (3.0 “ x 4.5 “) PCB. The JESD51-3 PCBs are designed to have low effective thermal
conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority
of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than
indicated by the JESD51 values.
PRODUCT
INFORMATION
11
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
typical circuits
MODEM
TIP
WIRE
RING
FUSE
RING DETECTOR
R1a
Th3
HOOK SWITCH
TISP4360
PROTECTED
EQUIPMENT
Th1
D.C. SINK
Th2
SIGNAL
TIP
AI6XBMB
RING
WIRE
Figure 16. MODEM INTER-WIRE PROTECTION
E.G. LINE CARD
R1b
AI6XBK
Figure 17. PROTECTION MODULE
R1a
Th3
SIGNAL
Th1
Th2
R1b
AI6XBL
D.C.
Figure 18. ISDN PROTECTION
OVERCURRENT
PROTECTION
TIP
WIRE
RING/TEST
PROTECTION
TEST
RELAY
RING
RELAY
SLIC
RELAY
S3a
R1a
Th3
S1a
SLIC
PROTECTION
Th4
S2a
SLIC
Th1
Th2
RING
WIRE
Th5
R1b
S3b
S1b
S2b
TISP6xxxx,
TISPPBLx,
½TISP6NTP2
C1
220 nF
TEST
EQUIPMENT
RING
GENERATOR
Figure 19. LINE CARD RING/TEST PROTECTION
PRODUCT
12
INFORMATION
VBAT
AI6XBJ
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
MECHANICAL DATA
SMBJ (DO-214AA)
plastic surface mount diode package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SMB
4,57
4,06
3,94
3,30
2
Index
Mark
(if needed)
2,40
2,00
1,52
0,76
2,10
1,90
0,20
0,10
2,32
1,96
5,59
5,21
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBHA
PRODUCT
INFORMATION
13
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
MECHANICAL DATA
recommended printed wiring footprint.
SMB Pad Size
2.54
2.40
2.16
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBI
device symbolization code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
DEVICE
SYMOBLIZATION
TISP4360H3BJ
CODE
4360H3
carrier information
Devices are shipped in one of the carriers below. Unless a specific method of shipment is specified by the
customer, devices will be shipped in the most practical carrier. For production quantities the carrier will be
embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
PRODUCT
14
CARRIER
ORDER #
Embossed Tape Reel Pack
TISP4360H3BJR
Bulk Pack
TISP4360H3BJ
INFORMATION
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
MECHANICAL DATA
tape dimensions
SMB Package Single-Sprocket Tape
4,10
3,90
1,65
1,55
2,05
1,95
1,85
1,65
0,40 MAX.
5,55
5,45
8,10
7,90
ø 1,5 MIN.
0 MIN.
Carrier Tape
Direction of Feed
12,30
11,70
8,20
MAX.
Cover
Tape
4,5 MAX.
Embossment
20°
Index
Mark
(if needed)
Maximium component
rotation
Typical component
cavity centre line
Typical component
centre line
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the
component cannot rotate more than 20° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:-
MDXXBJ
Reel diameter:
330 ±3,0 mm
Reel hub diameter 75 mm MIN.
Reel axial hole:
13,0 ±0,5 mm
C. 3000 devices are on a reel.
PRODUCT
INFORMATION
15
TISP4360H3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JUNE 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product
or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is
current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with
PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this
warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government
requirements.
PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents
or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design
right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such
semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE
FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1999, Power Innovations Limited
PRODUCT
16
INFORMATION