polyfet rf devices F1240 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 40 Watts Single Ended Package Style AT TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 120 Watts 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 6 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Pow er Gain η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 50 V 30V 50 V 40WATTS OUTPUT ) MAX 10 60 Load Mismatch Tolerance Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz % Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Relative Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdow n Voltage Idss Zero Bias Drain Current Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forw ard Transconductance Rdson MIN TYP MAX 40 1 UNITS TEST CONDITIONS V Ids = 0.15 A, Vgs = 0V 3 mA Vds = 12.5 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.3 A, Vgs = Vds 2.4 Mho Vds = 10V, Vgs = 5V Saturation Resistance 0.35 Ohm Vgs = 20V, Ids = 24 A Idsat Saturation Current 22.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 120 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 18 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 90 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com F1240 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1240 POUT VS PIN F=175 MHZ; IDQ=1.2A; VDS=12.5V F1C 3DI E CAPACITANCE 45 23.00 40 21.00 35 19.00 30 1000 17.00 Efficiency = 65% 100 25 15.00 20 13.00 15 11.00 10 9.00 0 1 2 3 4 5 P IN IN WATT S Crss 10 6 POUT Ciss Coss 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1C 3 D IE I V CURVE F1C 3 DIE GM & ID vs VGS 25 100 20 Id 10 15 10 Gm 1 5 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V Vg = 10V S11 AND S22 SMITH CHART 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:w w w .polyfet.com