SA702 - Polyfet

polyfet rf devices
SA702
General Description
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
50.0 Watts Single Ended
Package Style AA
"Polyfet"TM process
HIGH EFFICIENCY, LINEAR
HIGH GAIN, LOW NOISE
ROHS COMPLIANT
features
low feedback and output capacitances,
resulting in high Ft transistors with high
input impedance and high efficiency.
o
ABSOLUTE MAXIMUM RATINGS ( T = 25 C )
Total
Device
Dissipation
110 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
o
1.40 C/W
o
200 C
DC Drain
Current
Storage
Temperature
o
o
-65 C to 150 C
RF CHARACTERISTICS (
SYMBOL PARAMETER
MIN
Gps
Common Source Power Gain
η
Drain Efficiency
VSWR
TYP
6.5 A
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
70 V
20 V
50.0 WATTS OUTPUT )
MAX
13
85
Load Mismatch Tolerance
Drain to
Gate
Voltage
20:1
UNITS TEST CONDITIONS
dB
Idq = 0.40 A, Vds =
28.0 V, F = 175 MHz
%
Idq = 0.40 A, Vds =
28.0 V, F = 175 MHz
Relative
Idq = 0.40 A, Vds = 28.0 V, F =
175 MHz
ELECTRICAL CHARACTERISTICS ( EACH SIDE )
SYMBOL PARAMETER
MIN
TYP
MAX
UNITS TEST CONDITIONS
V
Bvdss
Drain Breakdown Voltage
Idss
Zero Bias Drain Current
2.0
mA
Vds = 28.0 V, Vgs = 0V
Igss
Gate Leakage Current
1
uA
Vds = 0V Vgs = 30V
Vgs
Gate Bias for Drain Current
5
V
gM
Forward Transconductance
65
2
Ids = 40.00 mA, Vgs = 0V
Ids = 0.20 A, Vgs = Vds
2.4
Mho
Vds = 10V, Vgs = 5V
0.50
Ohm
Vgs = 20V, Ids = 5.00 A
Vgs = 20V, Vds = 10V
Rdson
Saturation Resistance
Idsat
Saturation Current
14.00
Amp
Ciss
Common Source Input Capacitance
100.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitance
6.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitance
64.0
pF
Vds = 28.0 Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
SA702
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
S1A 2 DICE CAPACITANCE
S A7 0 2 Pin vs Pout F re q=1 7 5 M H z, V D S =2 8 V ,
I dq=.4 A
1000
17.00
60
16.00
Coss
CAPACITANCE IN PFS
70
100
50
15.00
Pout
40
14.00
30
Gain
13.00
20
[email protected] = 85%
Ciss
10
Crss
12.00
10
0
1
11.00
0
0.5
1
1.5
2
2.5
3
P in in W a tts
3.5
4
4.5
0
5
4
8
12
16
20
24
28
VDS IN VOLTS
IV CURVE
ID & GM VS VGS
S1A 2 DIE IV
S1A 2 DIE ID & GM Vs VG
100.00
16
Id in amps; Gm in mhos
14
12
Id
ID IN AMPS
10.00
10
8
6
4
1.00
gM
2
0.10
0
0
2
vg=2v
4
6
Vg=4v
8
10
12
14
VDS
IN VOLTS vg=8v
Vg=6v
16
0
18
20
0
2
vg=12v
Zin Zout
4
6
8
10
Vgs in Volts
12
14
16
18
PACKAGE DIMENSIONS IN INCHES
Tolerance .XX +/-0.01
POLYFET RF DEVICES
.XXX +/-.005 inches
REVISION 10/01/2007
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com