SM6T Series Vishay Semiconductors New Product formerly General Semiconductor Surface Mount TRANSZORB® Transient Voltage Suppressors Breakdown Voltage 6.8 to 220V Peak Pulse Power 600W DO-214AA (SMBJ) Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout 0.106 MAX (2.69 MAX) 0.180 (4.57) 0.160 (4.06) 0.083 MIN (2.10 MIN) 0.012 (0.305) 0.006 (0.152) Dimensions in inches and (millimeters) 0.096 (2.44) 0.084 (2.13) 0.050 MIN (1.27 MIN) 0.220 REF 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.203) Max. Mechanical Data Features Case: JEDEC DO-214AA (SMB) molded plastic over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.003 ounces, 0.093 grams Packaging Codes – Options (Antistatic): 51 – 2K per Bulk box, 20K/carton 52 – 750 per 7” plastic Reel (12mm tape), 15K/carton 5B – 3.2K per 13” plastic Reel (12mm tape), 32K/carton • Low profile package with built-in strain relief for surface mounted applications • Glass passivated junction • Low inductance • Excellent clamping capability • Repetition rate (duty cycle): 0.01% • Fast response time: theoretically (with no parisitic inductance) less than 1ps from 0 Volts to V(BR) for unidirectional and 5ns for bidirectional types • High temperature soldering: 250°C/10 seconds at terminals • Plastic package has Underwriters Laboratory Flammability Classificaion 94V-0 Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol Value Unit Peak pulse power dissipation on 10/1000µs waveform(1)(2) (Fig. 1) PPPM Minimum 600 W Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A Power dissipation on infinite heatsink, TA = 50°C PM(AV) 5.0 W Peak forward surge current 10ms single half sine-wave uni-directional only (2) IFSM 100 A Thermal resistance junction to ambient air (3) RθJA 100 °C/W RθJL 20 °C/W TJ, TSTG –65 to +150 °C Thermal resistance junction to leads Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2 (2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal (3) Mounted on minimum recommended pad layout Document Number 88385 03-May-02 www.vishay.com 1 SM6T Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Type(1) SM6T6V8A SM6T7V5A SM6T10A SM6T12A SM6T15A SM6T18A SM6T22A SM6T24A SM6T27A SM6T30A SM6T33A SM6T36A SM6T39A SM6T68A SM6T100A SM6T150A SM6T200A SM6T220A Device Marking Code UNI BI KE7 KK7 KT7 KX7 LG7 LM7 LT7 LV7 LX7 ME7 MG7 MK7 MM7 NG7 NV7 PK7 PR7 PR8 KE7 AK7 AT7 AX7 LG7 BM7 BT7 LV7 BX7 CE7 MG7 CK7 CM7 NG7 NV7 PK7 PR7 PR8 Breakdown Voltage VBR @ IT(2) IT(V) Min Max 6.45 7.13 9.50 11.4 14.3 17.1 20.9 22.8 25.7 28.5 31.4 34.2 37.1 64.6 95.0 143 190 209 7.14 7.88 10.5 12.6 15.8 18.9 23.1 25.2 28.4 31.5 34.7 37.8 41.0 71.4 105 158 210 231 Test Current (mA) Standoff Voltage VRM (V) Leakage Current (3) IRM @VRM (µA) 10 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.80 6.40 8.55 10.2 12.8 15.3 18.8 20.5 23.1 25.6 28.2 30.8 33.3 58.1 85.5 128 171 188 1000 500 10.0 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Clamping Voltage VC @ IPP 10/1000µs (V) (A) Clamping Voltage VC @ IPP 8/20µs (V) (A) 10.5 11.3 14.5 16.7 21.2 25.2 30.6 33.2 37.5 41.5 45.7 49.9 53.9 92.0 137 207 274 328 13.4 14.5 18.6 21.7 27.2 32.5 39.3 42.8 48.3 53.5 59.0 64.3 69.7 121 178 265 353 388 57.0 53.0 41.0 36.0 28.0 24.0 20.0 18.0 16.0 14.5 13.1 12.0 11.1 6.50 4.40 2.90 2.20 2.00 298 276 215 184 147 123 102 93 83 75 68 62 57 33 22.5 15 11.3 10.3 αT Max 0-4/OC 5.7 6.1 7.3 7.8 8.4 8.8 9.2 9.4 9.6 9.7 9.8 9.9 10.0 10.4 10.6 10.8 10.8 10.8 Notes: (1) For bi-directional devices add suffix “CA”. (2) VBR measured after IT applied for 300µs square wave pulse. (3) For bipolar devices with VR=10 Volts or under, the IT limit is doubled. www.vishay.com 2 Document Number 88385 03-May-02 SM6T Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Pulse Derating Curve Fig. 1 – Peak Pulse Power Rating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % PPPM — Peak Pulse Power (kW) 100 10 1 0.2 x 0.2" (0.5 x 0.5mm) Copper Pad Areas 100 75 50 25 0 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms 0 td — Pulse Width (sec.) Fig. 3 – Pulse Waveform 75 100 TJ = 25°C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10µsec. Peak Value IPPM 100 Half Value — IPP 2 IPPM 50 10/1000µsec. Waveform as defined by R.E.A. 1.0 0 3.0 2.0 175 200 1,000 VR, Measured at Stand-Off Voltage, VWM 100 TJ = 25°C f = 1.0MHz Vsig = 50mVp-p Uni-Directional Bi-Directional 10 4.0 1 10 100 200 VWM — Reverse Stand-Off Voltage (V) t — Time (ms) Fig. 6 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 – Typical Transient Thermal Impedance IFSM — Peak Forward Surge Current (A) 100 10 1.0 0.1 0.001 150 Measured at Zero Bias td 0 125 Fig. 4 – Typical Junction Capacitance 6,000 CJ — Junction Capacitance (pF) IPPM — Peak Pulse Current, % IRSM 50 TA — Ambient Temperature (°C) 150 Transient Thermal Impedance (°C/W) 25 200 8.3ms Single Half Sine-Wave (JEDEC Method) Unidirectional Only 100 10 0.01 0.1 1 10 tp — Pulse Duration (sec) Document Number 88385 03-May-02 100 1000 1 10 100 Number of Cycles at 60HZ www.vishay.com 3