SM4933 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION SM4937 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .205 (5.2) .190 (4.8) SOLDERABLE ENDS .028 (.60) .018 (.46) .106 (2.7) .095 (2.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TA = 55o C Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance SYMBOL SM4933 SM4934 SM4935 SM4936 SM4937 UNITS VRRM 50 100 200 400 600 Volts VRMS 35 70 140 280 420 Volts VDC 50 100 200 400 600 1.0 Amps I FSM 30 Amps (Note 2) Rθ JL (Note 3) Rθ JA 30 75 15 -65 to + 175 CJ T J , T STG Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range Volts IO 0 0 C/ W C/ W pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC Maximum Average Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 4) @T A = 25 o C @T A = 125 oC SM4933 SM4934 SM4935 SM4936 SM4937 UNITS IR 1.2 50 5.0 Volts uAmps uAmps trr 100 200 uAmps nSec VF NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 1.0A, VR = 30V. 2001-4 1.0 .8 .6 .4 Single Phase Half Wave 60Hz Resistive or Inductive Load .2 0 0 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 20 10 8.3ms Single Half Sine-Wave (JEDED Method) 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) 1 4 TJ = 100 1.0 .4 .1 .04 TJ = 25 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 2 3.8uH 3 /1.4 6 C.P.CLARE HPG 1002 4 5 30 Vdc CONSTANT VOLTAGE SUPPLY 1 AMP SLO-BLO FUSE C1 1.0uF 300V MINIMIZE ALL LEAD LENGTHS A-TEKTRONIX 545A. K PLUG IN PRE AMP P6000 PROBE OR EQUIVALENT R1-ADJUSTED FOR 1.4 BETWEEN POINT 2 OF RELAY AND RECTIFIER INDUCTIVE = 3.8uH R2-TEN-1W 10 IN PARALLEL 10 TA = 25 0 trr IFM 1.0 i(t) 20 10 di/dt = 50A/uS 0 Zout 11/2 MAX DC to 2kHz % CARBON CORE FOR RECTIFIER TJ = 25 Pulse Width = 300us 1% Duty Cycle 1.0 .1 .6 30 50W NON-INDUCTIVE UNIT UNDER TEST 1.0 Adc FROM CONSTANT R2 VOLTAGE SUPPLY C1 1 RIPPLE = 3mVrms MAX 1.0uF 10W 300V NONINDUCTIVE 4 6 8 10 20 40 60 80100 NUMBER OF CYCLES AT 60Hz .01 1 8 115Va 10K 60Hz 2W 7 2 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) 10 FORWARD SURGE CURRENT, (A) FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE JUNCTION CAPACITANCE, (pF) INSTANTANEOUS REVERSE CURRENT, (uA) AVERAGE FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES ( SM4933 THRU SM4937 ) .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 TJ = 25 2 1 IRM (REC) SET TIME BASE FOR 50/100 ns/cm .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100