FSM101 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FSM107 SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Fast switching Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.015 gram MELF MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 .205 (5.2) .190 (4.8) SOLDERABLE ENDS .028 (.60) .018 (.46) .106 (2.7) .095 (2.4) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at T A = 55o C Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Thermal Resistance FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS VRRM 50 100 200 400 600 800 1000 VRMS 35 70 140 280 420 560 700 Volts VDC 50 100 200 400 600 800 1000 Volts IO 1.0 Amps I FSM 30 Amps (Note 2) Rθ JL (Note 3) Rθ JA 30 75 15 -65 to + 175 CJ T J , T STG Typical Junction Capacitance (Note 1) Operating and Storage Temperature Range Volts 0 0 C/ W C/ W pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage at 1.0A DC Maximum Full Load Reverse Current,Full cycle Average at TA = 55oC Maximum Average Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 4) @T A = 25 o C @T A = 125 oC FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS 1.3 50 5.0 VF IR Volts uAmps uAmps 100 trr NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC 2. Thermal resistance junction to terminal 6.0mm2 copper pads to each terminal. 3. Thermal resistance junction to ambient, 6.0mm2 copper pads to each terminal. 4. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 150 250 500 uAmps nSec 2001-4 FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE FORWARD SURGE CURRENT, (A) AVERAGE FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES ( FSM101 THRU FSM107 ) 1.0 .8 .6 .4 Single Phase Half Wave 60Hz Resistive or Inductive Load .2 0 0 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 20 10 8.3ms Single Half Sine-Wave (JEDED Method) 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE, ( ) 1 INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) 4 TJ = 100 1.0 .4 .1 .04 TJ = 25 .01 20 10 TJ = 25 Pulse Width = 300us 1% Duty Cycle 1.0 .1 .01 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (¡V) D.U.T PULSE GENERATOR (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 -0.25A (+) -1.0A 1cm JUNCTION CAPACITANCE, (pF) 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) (+) 25 Vdc (approx) (¡V) 4 6 8 10 20 40 60 80 100 NUMBER OF CYCLES AT 60Hz FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 10 2 SET TIME BASE FOR 50/100 ns/cm FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 TJ = 25 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON