RF2416 Preliminary 4 DUAL-BAND 2.7V LOW NOISE AMPLIFIER Typical Applications • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems The RF2416 is a dual-band low noise amplifier with bypass switch designed for use as a front-end for 950MHz GSM and DCS1800/PCS1900 applications. It may also be used for dual-band cellular/PCS application. The 900MHz LNA is a single-stage amplifier with bypass switch; the 1800/1900 LNA is a two-stage amplifier with bypass switch. Both amplifiers have excellent noise figure and high linearity in both high gain and bypass/low gain mode. The device is packaged in a 3mmx3mm, 12 pin, leadless chip carrier. 0.80 0.65 1.00 0.85 4 3.00 sq. 0.65 0.30 0.60 0.24 typ 2 GENERAL PURPOSE AMPLIFIERS Product Description 4 PLCS 0.30 0.18 1.25 sq. 0.95 0.75 0.50 12° max 0.05 0.01 0.23 0.13 0.50 4 PLCS Dimensions in mm. NOTES: 1 Shaded Pin is Lead 1. 2 Dimension applies to plated terminal and is measured between 0.02 mm and 0.25 mm from terminal end. Pin 1 identifier must exist on top surface of package by identification mark or 3 feature on the package body. Exact shape and size is optional. 4 Package Warpage: 0.05 mm max. 5 Die thickness allowable: 0.305 mm max. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü GaAs HBT GaAs MESFET SiGe HBT Si CMOS Package Style: LCC, 12-Pin, 3x3 Features HB GND1 VCC1 HB HB GND2 • Low Noise and High Intercept Point 12 11 10 HB IN 1 • Dual-Band Application GSM900 and DCS1800/PCS1900 9 HB OUT • Power Down Control • Switchable Gain Logic Control HB BIAS 2 8 HB SELECT 7 LB SELECT 4 5 6 LB IN LB GND LB OUT LB BIAS 3 Functional Block Diagram Rev A2 010810 Ordering Information RF2416 RF2416 PCBA Dual-Band 2.7V Low Noise Amplifier Fully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com 4-199 RF2416 Preliminary Absolute Maximum Ratings Parameter Supply Voltage Input RF Level Storage Temperature Parameter Rating Unit -0.5 to +6.0 +10 -40 to +150 VDC dBm °C Specification Min. Typ. Max. Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). Unit Condition Operating Range GENERAL PURPOSE AMPLIFIERS 4 Overall Frequency Range Supply Voltage (VCC) Power Down Voltage (VBIAS) Logic Control Voltage Level Operating Ambient Temperature 800 1800 2.7 2.7 0 -40 Input Impedance Output Impedance 2.8 2.8 1000 2000 3.0 3.0 3.0 +85 MHz MHz V V V oC Ω Ω 50 50 T = 25°C, RF=950MHz, VCC1LB=VCC2LB=2.78V, LBSelect=0V, ZIN =ZO =50Ω 950MHz Performance High Gain Mode Gain Gain Variation Over Temperature Range Gain Variation Over Frequency Band Noise Figure Reverse Isolation Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw 14 15 +2.0 -12 15.5 1.1 21 +5.0 -9 4.8 17 +0.5 dB dB +0.5 dB 2.0 dB dB dBm dB 2:1 2:1 6.0 mA 950MHz Performance Bypass Mode Gain Gain Reduction Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw 4-200 Low Band Operation High Band Operation VCC1 HB, VCC2 HB, VCC1 LB HB BIAS, LB BIAS HB SELECT, LB SELECT -8 12.0 -1 -6 21.5 15.0 +2 -3 900MHz LNA ENABLED, 1900MHz LNA DISABLED. ICC + IPD T = 25°C, RF=950MHz, VCC1LB=VCC2LB=2.78V, LBSelect=2.7V, ZIN =ZO =50Ω dB dBc dBm dB 2.5:1 2:1 See Application Notes Rev A2 010810 RF2416 Preliminary Specification Min. Typ. Max. Unit 1850MHz Performance High Gain Mode Gain Gain Variation Over Temperature Range Gain Variation Over Frequency Band Noise Figure Reverse Isolation Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw T = 25°C, RF=1850MHz, VCC1HB=2.78V, HBSelect=0V, ZIN =ZO =50Ω 15 15 -2.0 -13 17.5 1.5 20 +1.0 -10 8.2 19 +0.5 dB dB +0.5 dB 2.1 dB dB dBm dB 2:1 2:1 10 mA 1850MHz Performance Bypass Mode Gain Gain Reduction Input IP3 Input P1dB Input VSWR Output VSWR Total Current Draw AGC Settling Time Rise and Fall Time Rev A2 010810 Condition -7 22 12.0 +5 -5 23 15.0 +8 -3 24 4 1900MHz LNA ENABLED, 900MHz LNA DISABLED. ICC + IPD T = 25°C, RF=1850MHz, VCC1HB=2.78V, HBSelect=2.7V, ZIN =ZO =50Ω dB dBc dBm dB 2:1 2.5:1 See Applications Notes 10 10 µs µs 4-201 GENERAL PURPOSE AMPLIFIERS Parameter RF2416 Pin 1 Function HB IN Preliminary Description Interface Schematic DCS1800/PCS1900 RF input pin. To Bias VCC1 HB Circuit HB IN HB GND1 2 HB BIAS HB BIAS is set to the supply voltage at high gain mode. For bypass mode see “Gain Select Possibility”. HB VREF/P 3 LB BIAS LB BIAS is set to the supply voltage at high gain mode. For bypass mode see “Gain Select Possibility”. LB VREF/PD 4 LB IN GENERAL PURPOSE AMPLIFIERS 4 GSM900 RF input pin. To Bias Circuit LB OUT LB IN LB GND 5 LB GND LNA emittance inductance. Total inductance is comprised of package+bondwire+L2 on PCB. 6 LB OUT 7 LB SELECT GSM900 Amplifier Output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. This pin selects high gain and bypass for GSM900. Select < 0.8V, high gain. Select > 1.8V, low gain. 8 9 HB SELECT HB OUT This pin selects high gain and bypass for DCS1800/PCS1900. Select < 0.8V, high gain. Select > 1.8V, low gain. DCS1800 Amplifier Output pin. This pin is an open-collector output. It must be biased to VCC through a choke or matching inductor. This pin is typically matched to 50Ω with a shunt bias/matching inductor and series blocking/matching capacitor. Refer to application schematics. LB SELECT HB SELECT HB OUT HB GND2 4-202 Rev A2 010810 RF2416 Preliminary Pin 10 Function HB GND2 Description 11 VCC1 HB Open collector for first stage LNA of DCS1800/PCS1900. It must be biased to VCC through a choke or matching inductor. Interface Schematic LNA2 emittance inductance. Total inductance is comprised of package+bondwire+L5 on PCB. VCC1 HB HB GND1 HB GND1 Rev A2 010810 4 LNA1 emittance inductance. Total inductance is comprised of package+bondwire+L7 on PCB. GENERAL PURPOSE AMPLIFIERS 12 4-203 RF2416 Preliminary Application Notes Bypass Mode Configurations The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416 into this low gain state. The table below shows the two possible Bypass states for each mode. RF2416 Bypass Mode Possibilities Gain Select (HB Mode) HB BIAS (V) VCC1_HB and VCC2_HB (V) Current (mA) 2.7 0 2.78 1.4 2.7 2.7 2.78 1.9 Gain Select (LB Mode) LB BIAS (V) VCC1_LB (V) Current (mA) 2.7 0 2.78 0.8 2.7 2.7 2.78 1.5 GENERAL PURPOSE AMPLIFIERS 4 For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to 1.8V. The difference between the Bypass possibilities is determined by the specific application’s ability to change the voltage of the bias pins independently of VCC. The advantage of the ability to assert the bias pins to 0V when in Bypass mode is shown by the decreased current draw when in this Bypass configuration. 4-204 Rev A2 010810 RF2416 Preliminary Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) VCC1 HB VCC1 HB C14 100 pF J1 HB IN C1 33 nF 12 50 Ω µstrip 11 50 Ω µstrip L4 3.3 nH 10 1 C11 0.1 µF L5 1.0 nH 9 C10 0.7 pF R1 0Ω HB BIAS Logic Control 2 C2 0.1 µF R2 0Ω HB SELECT C9 0.1 µF 7 5 C8 0.1 µF 6 LB SELECT 2416310, rev. 3 L3 8.2 nH LB BIAS R3 0Ω L2 6.8 nH 50 Ω µstrip J2 LB IN 8 3 4 C3 0.1 µF 50 Ω µstrip J4 HB OUT C5 0.1 µF C7 2.0 pF 50 Ω µstrip J3 LB OUT C6 100 pF C4 33 nF VCC1 LB P2 P1 P1-1 P1-3 1 HB BIAS 2 GND 3 LB BIAS CON3 Rev A2 010810 P2-1 P2-3 P3 1 HB SELECT 2 GND 3 LB SELECT CON3 P3-1 P3-3 1 VCC1 HB 2 GND 3 VCC1 LB CON3 4-205 4 GENERAL PURPOSE AMPLIFIERS L1 47 nH C13 0.1 µF L6 3.3 nH L7 1.0 nH C12 100 pF RF2416 Preliminary Evaluation Board Layout Board Size 2” x 2” Board Thickness 0.060”, Board Material FR-4, Multi-Layer GENERAL PURPOSE AMPLIFIERS 4 4-206 Rev A2 010810 RF2416 Preliminary Low Band Bypass Mode (S11) 1.0 0.8 2. 0 0. 4 4.0 5.0 3.0 4.0 5.0 0.2 0.2 10.0 3.0 4.0 5.0 2.0 1.0 0.8 0.6 0.4 0 0.2 10.0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 10 MHz 10 MHz -10.0 5.5 GHz 4 GHz .4 -0 1.5 GHz .0 -2 -1.0 Swp Max 6GHz 2.0 2. 0 0.6 0.8 1.0 1.0 0.6 Swp Max 6GHz 0. 4 0. 4 0 3. 4.0 5.0 0 3. 4.0 5.0 0.2 5 GHz Swp Min 0.01GHz Low Band High Gain Mode (S22) Low Band High Gain Mode (S11) 0.8 -0.8 -0. 6 -2 Swp Min 0.01GHz -1.0 -0.8 -0. 6 .0 .0 -3 4 GHz 0 3 GHz -3 . -4. 0 -5.0 950 MHz .4 -0 -0.2 -4. 0 -5.0 4.5 GHz -10.0 -0.2 950 MHz 5.5 GHz 10.0 0.2 1.5 GHz .0 -2 .4 -0 -1.0 -0.8 -0. 6 Swp Min 0.01GHz 10.0 4.0 5.0 3.0 2.0 0.8 1.0 500 MHz 950 MHz 3.5 GHz .0 -2 -1.0 -0.8 -0. 6 0.6 0.4 0 10.0 4.0 5.0 2.0 1.0 0.8 0.4 0.2 3.0 .0 2 GHz -3 950 MHz 4.5 GHz -0.2 .0 3 GHz .4 -0 -4. 0 -5.0 500 MHz 10 MHz -3 0.6 -10.0 3.5 GHz -0.2 Rev A2 010810 5 GHz -4. 0 -5.0 0 10 MHz -10.0 4 GHz 0.2 10.0 Swp Min 0.01GHz 4-207 4 GENERAL PURPOSE AMPLIFIERS 0. 4 0 3. 5 GHz Swp Max 6GHz 0.6 2. 0 0.6 0.8 1.0 Low Band Bypass Mode (S22) Swp Max 6GHz RF2416 Preliminary 4 0. 4 0.8 0 3. 0 4. 5.0 0.2 4.0 5.0 0. 0 3. Swp Max 6GHz 2. 0 2.0 6 0. 0.8 0.6 Swp Max 6GHz 1.0 High Band Bypass Mode (S22) 1.0 High Band Bypass Mode (S11) 0.2 10.0 4.0 5.0 3.0 .0 -2 1850 MHz -1.0 -0 .6 Swp Min 0.01GHz High Band High Gain Mode (S22) Swp Max 6GHz 2.0 0.6 0.8 Swp Max 6GHz 2.0 1.0 High Band High Gain Mode (S11) 0.6 2.0 1.0 0.8 0.6 0.4 0.2 Swp Min 0.01GHz -1.0 -0.8 1 GHz 0.8 4 GHz .4 .0 -2 -0. 6 3 GHz -0 1.0 .0 1.5 GHz 1 GHz 4.5 GHz 2 -0. -0.8 -4. 0 -5.0 .4 -0 0 10.0 4.0 5.0 2.0 1.0 0.8 0.6 0.4 0.2 3.0 2 GHz 500 MHz 5 GHz -3 -0.2 -10.0 0. 4 0. 4 0 3. 4.0 5.0 0 3. 4.0 5.0 0.2 0.2 10 MHz 10 MHz 2 GHz 2.5 GHz 10.0 4.0 5.0 3.0 2.0 4 GHz 1.0 0.8 0.6 0.4 0.2 10.0 0 10.0 4.0 5.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 4.5 GHz 3 GHz -10.0 Swp Min 0.01GHz .0 -2 1850 MHz -0. 6 .0 -2 - -1.0 -1.0 -0.8 -0. 6 1 GHz 4 0. -0.8 .0 1.5 GHz -3 - 3.5 GHz .0 1 GHz 1850 MHz 4 0. -0.2 -3 -4. 0 -5.0 4 GHz -4. 0 -5.0 500 MHz -0.2 -10.0 GENERAL PURPOSE AMPLIFIERS 4 GHz 10 MHz -3 .0 4 10 MHz -4 .0 -5. 0 1850 MHz 10.0 -10.0 0 10.0 Swp Min 0.01GHz S-Parameter Conditions: All plots shown were taken at VCC =2.78V and Ambient Temperature=25°C. Note: All S11 and S22 plots shown were taken from an RF2416 while on a 2416310 evaluation board. The data was captured without the external input or output tuning components in place, and the reference point at the HB IN and HB OUT pins for high band and LB IN and LB OUT for low band. 4-208 Rev A2 010810