TetraFET D1006UK METAL GATE RF SILICON FET MECHANICAL DATA B C A 1 E 2 3 F 6 5 G 4 J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED D H M FEATURES • SIMPLIFIED AMPLIFIER DESIGN Q K N O P • SUITABLE FOR BROAD BAND APPLICATIONS DV PIN 1 SOURCE PIN 2 DRAIN PIN 3 SOURCE PIN 4 SOURCE PIN 5 GATE PIN 6 SOURCE DIM A B C D E F G H J K M N O P Q mm 9.09 19.3 45° 5.71 1.65R 9.78 20.32 19.30 1.52R 10.77 22.86 3.17 0.13 4.19 6.35 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.02 0.13 REF Inches 0.358 0.760 45° 0.225 0.065R 0.385 0.800 0.760 0.060R 0.424 0.900 0.125 0.005 0.165 0.250 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.001 0.005 REF • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 14 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 220W 70V ±20V 30A –65 to 150°C 200°C Prelim. 11/00 D1006UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 100mA VDS = 28V VGS = 0 6 mA VGS = 20V VDS = 0 1 mA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 6A GPS Common Source Power Gain PO = 120W Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 175MHz IDSS IGSS h Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current IDQ = 1.2A 70 1 4.8 S 14 dB 50 % 20:1 — Ciss Input Capacitance VDS = 0V VGS = –5V f = 1MHz 360 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 180 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 15 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 0.8°C / W Prelim. 11/00 D1006UK 3RXW : I 0+] ,GT $ 9GV 9 3LQ: 'UDLQ (IILFLHQF\ 3RXW : *DLQ G% I 0+] ,GT $ 9GV 9 3LQ: 3RXW 'UDLQ(IILFLHQF\ Figure 1. Power Output and Efficiency vs.Input Power 3RXW *DLQ Figure 2. Power Output and Gain vs. Input Power D1006UK OPTIMUM SOURCE AND LOAD IMPEDANCE ,0' G%F ZS ZL 175 0.5 - j0.6 1.7 - j0.1 W W I 0+] I 0+] 9GV 9 Frequency MHz 3RXW:3(3 ,GT $ ,GT $ Figure 3. IMD vs Output Power Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00 D1006UK G a te -B ia s 1 5 1 0 0 K + 2 8 V L 2 1 K 1 0 K 4 7 p F 4 0 -2 0 0 p F 1 0 n F D 1 0 0 6 K 6 x 6 m m c o n ta c t p a d 1 n F 1 6 -1 0 0 p F 1 0 0 n F 1 0 u F 1 .5 K L 1 4 7 p F T 3 T 2 T 1 1 0 n F 3 5 p F 6 x 6 m m c o n ta c t p a d 4 0 -2 0 0 p F T 4 1 6 -1 0 0 p F 175 MHz Test Fixture Substrate 1.6mm PTFE/glass, Er = 2.5 All microstrip lines W = 5mm T1 T2 T3 T4 L1 L2 Semelab plc. 10mm 23.5mm 25mm 6mm 9 turns 20swg encamelled copper wire, 6mm i.d. 11 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite core Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00