SEME-LAB D2032UK

TetraFET
D2032UK
ROHS COMPLIANT METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
A
C
B
(2 pls)
K
3
2
1
E
D
5
4
G (4 pls)
F
FEATURES
O
• SIMPLIFIED AMPLIFIER DESIGN
H
M
I
J
N
DK
• SUITABLE FOR BROAD BAND APPLICATIONS
PIN 1
SOURCE (COMMON) PIN 2
DRAIN 1
• VERY LOW Crss
PIN 3
DRAIN 2
GATE 2
• SIMPLE BIAS CIRCUITS
PIN 5
GATE 1
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
PIN 4
• LOW NOISE
mm
6.45
1.65R
45°
16.51
6.47
18.41
1.52
4.82
24.76
1.52
0.81R
0.13
2.16
Tol.
0.13
0.13
5°
0.76
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.02
0.13
Inches
0.254
0.065R
45°
0.650
0.255
0.725
0.060
0.190
0.975
0.060
0.032R
0.005
0.085
Tol.
0.005
0.005
5°
0.03
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.001
0.005
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS
from DC to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD
BVDSS
BVGSS
ID(sat)
Tstg
Tj
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
35W
65V
±20V
1A
–65 to 150°C
200°C
* Per Side
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 6334
Issue 1
D2032UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
PER SIDE
BVDSS
IDSS
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
V
VGS = 0
ID = 10mA
VDS = 28V
VGS = 0
1
mA
1
μA
7
V
IGSS
Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th)
Gate Threshold Voltage*
ID = 10mA
VDS = VGS
gfs
Forward Transconductance*
VDS = 10V
ID = 0.2A
65
1
0.18
S
13
dB
40
%
20:1
—
TOTAL DEVICE
GPS
Common Source Power Gain
PO = 5W
η
Drain Efficiency
VDS = 28V
VSWR
Load Mismatch Tolerance
f = 1GHz
IDQ = 0.2A
PER SIDE
Ciss
Input Capacitance
VDS = 28V
VGS = –5V f = 1MHz
12
pF
Coss
Output Capacitance
VDS = 28V
VGS = 0
f = 1MHz
6
pF
Crss
Reverse Transfer Capacitance VDS = 28V
VGS = 0
f = 1MHz
0.5
pF
* Pulse Test:
Pulse Duration = 300 μs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Semelab plc.
Thermal Resistance Junction – Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Max. 5.0°C / W
Document Number 6334
Issue 1
D2032UK
3RXW
:
9GV 9
,GT $
I *+]
3LQ:
3RXW
G%
:
*DLQ
9GV 9
,GT $
I *+]
3LQ:
3RXW
*DLQ
Figure 1 Output Power and Gain vs. Input power
'UDLQ(IILFLHQF\
3RXW
'UDLQ(IILFLHQF\
Figure 2 Output Power and Efficiency vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE
,0' G%F
I 0+]
I 0+]
9GV 9
3RXW:3(3
Frequency
MHz
ZS
Ω
ZL
Ω
1000MHZ
1.1 - j2.5
5.1 - j17.1
,GT $
,GT $
Figure 3 IMD Vs. Output Power.
Typical S Parameters
! Vds=28V, Idq=0.1A
# MHZ S MA R 50
Semelab plc.
!Freq
!MHz
S11
mag
ang
S21
mag
ang
S12
mag
ang
S22
mag
ang
70
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
0.97
0.94
0.88
0.84
0.82
0.79
0.78
0.77
0.77
0.77
0.78
0.78
0.78
0.79
0.79
0.78
0.78
0.79
0.78
0.79
-36.4
-48.0
-65.3
-78.5
-88.4
-97.1
-105.5
-113.3
-121.8
-128.9
-136.7
-144.0
-150.8
-156.7
-160.9
-164.2
-166.3
-168.5
-170.3
-172.5
15.8
14.1
12.3
10.2
8.8
7.7
6.9
6.0
5.4
4.9
4.6
4.4
4.0
3.7
3.4
3.0
2.7
2.6
2.5
2.4
156.6
146.3
129.9
114.7
106.0
98.3
88.5
84.5
77.8
75.3
68.3
65.4
57.2
52.3
46.7
41.4
39.5
38.4
36.8
33.0
0.017
0.021
0.027
0.029
0.029
0.029
0.028
0.026
0.024
0.022
0.020
0.020
0.020
0.022
0.025
0.028
0.032
0.036
0.044
0.053
67.2
58.1
45.5
34.8
28.1
27.3
22.2
24.2
23.3
29.6
35.0
46.6
57.6
68.5
76.6
81.6
87.8
92.3
97.4
97.4
0.91
0.88
0.81
0.77
0.75
0.73
0.72
0.71
0.70
0.70
0.70
0.70
0.70
0.71
0.70
0.69
0.68
0.68
0.70
0.70
-23.2
-30.1
-40.3
-48.1
-54.2
-59.1
-64.3
-69.3
-75.2
-80.4
-86.5
-93.6
-99.6
-105.8
-111.3
-115.6
-117.0
-119.3
-121.0
-124.2
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 6334
Issue 1
D2032UK
10
+28V
Gate-Bias
L3
6.8K
1K2
100nF
1K2
1nF
L1
1K2
D2032UK
T3
T4
T5
30pF
T11
T
1
10nF
L2
T12
T13
T6
30pF
T2
1-10pF
1-10pF
3.6pF
100uF
1-10pF
3.6pF
9.1pF
T17
30pF
30pF
T7
T8
T9
T10
D2032UK
T14
T15
T16
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1
T2, T17
T3, T7
T4, T8
T5, T9
T6, T10
T11,T14
T12,T15
T13,T16
15.7
45mm 50 OHM UT 34 semi-rigid coax
7mm
15mm
7.6mm
8mm
8mm
11.2mm
7mm
L1, L2
L3
6 turns 24swg enamelled copper wire, 3mm i.d.
1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X
2 hole core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website: http://www.semelab.co.uk
E-mail: [email protected]
Document Number 6334
Issue 1