Data Sheet No. 2C4261 Generic Packaged Parts: Chip Type 2C4261 Geometry 0014 Polarity PNP 2N4260, 2N4261 Chip type 2C4261 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for low voltage, low gain RF amplifier applications. Part Numbers: 2N4261, 2N4261UB, 2N4260, 2N4260UB, SD4261, SD4261F, SQ4261, SQ4261F Features: Special Characteristics ft = 1.8 GHz (typ) at 10 mA/10V Mechanical Specifications Metallization Bonding Pad Size Top Backside Emitter Base Die Thickness Chip Area Top Surface Al - 12 kÅ min. Au - 6.5 kÅ nom. 2.1 mils x 2.1 mils 2.1 mils x 2.1 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics TA = 25oC Test conditions Min Max Unit BVCEO Parameter IC = 10.0 mA, IB = 0 15 --- V dc BVCBO IC = 10 µA, IE = 0 15 --- V dc BVEBO IE = 10 µA, IC= 0 4.5 --- V dc hFE IC = 10 mA dc, VCE = 1.0 V dc 30 150 --Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%.