PT4120 PT4120 Side View and Thin Flat Type 2-Phase Output Phototransistor ■ Features ■ Outline Dimensions Gate burr 2-C0.5 0.7 4˚ 3-0.45 +- 0.3 0.1 3. Encoders 1 1.0 4˚ 4˚ 0.15 2.0 (1.7) Rugged resin 0.2 MAX. 1. Mouses 2. Track balls 4˚ MAX.0.1 4.0 1.4 3.9 0.8 2 16.5±1.0 18.0 +- 1.5 1.0 Rugged resin 0.8 MAX. ■ Applications Transparent epoxy resin 0.7 PT B PT A 3.0 1.5 (Read pitch : 0.94 mm) 2. Compact, thin and flat package (Unit : mm) 1.8 0.3 MAX. 1. 2-phase PT output type 56˚ ± 5.0 3-0.4 +- 0.3 0.1 3 (1.5) (2.54) Shape of detector portion 0.94 6˚ 2.8 0.81 0.47 6˚ 0.47 6˚ 0.17 6˚ * Tolerance : ± 0.2 mm 1 3 1 Emitter (PT A) 2 Collector (common) 3 Emitter (PT B) 2 ■ Absolute Maximum Ratings Symbol VCEO VECO IC PC Topr Tstg Tsol Rating 35 6 20 75 - 25 to +85 - 40 to +85 260 Unit V V mA mW ˚C ˚C ˚C 1.4mm Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature (Ta = 25˚C) Soldering area *1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” PT4120 ■ Electro-optical Characteristics Parameter (Ta = 25˚C) Symbol *2 Collector current IC Dark current ICEO *2 *2 Collector-emitter saturation voltage VCE(sat) Collector-emitter breakdown voltage BVCEO *2 Emitter-collector breakdown voltage BVECO *2 λp Peak sensitivity wavelength Rise Time Fall Time Response time Conditions EV = 1 000 lx VCE = 5V Ee = 0,VCE= 20V EV = 1 000 lx IC = 0.1mA IC = 0.1mA Ee = 0 IE = 0.01mA Ee = 0 2-element I C variation tr tf VCE = 2V,IC = 2mA RL = 100Ω R IC(a)/IC(b) MIN. TYP. MAX. Unit 0.45 - 1.8 mA - - 0.1 µA - 0.1 0.4 V 35 - - V 6 - - V - 800 - nm - 3.0 3.5 - µs µs 0.7 - 1.3 - *2 E v, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp) *3 Terminals other than test terminal shall be released. Fig. 1 Collector Power Dissipation vs. Ambient Temperature Fig. 2 Dark Current vs. Ambient Temperature 10 -6 80 2 10 -7 60 Dark current I CEO (A) Collector power dissipation P C (mW) 5 VCE = 20V 70 50 40 30 20 5 2 10 -8 5 2 10 -9 5 10 2 0 - 25 0 25 50 75 85 Ambient temperature Ta ( ˚C) 100 10 -10 0 25 50 75 Ambient temperature Ta ( ˚C) 100 PT4120 Fig. 3 Relative Collector Current vs. Ambient Temperature Fig. 4 Collector Current vs. Illuminance 20.0 160 VCE = 5V EV = 1 000 lx 10.0 Collector current Ic (mA) Relative collector current (%) 140 120 100 80 60 40 VCE = 5V Ta = 25˚C 5.0 2.0 1.0 0.5 0.0 20 0 0 10 20 30 40 50 60 0.1 10 70 20 50 Ambient temperature Ta (˚C) 100 200 500 1000 2000 Illuminance EV (lx) Fig. 5 Collector Current vs. Collector-emitter Voltage Fig. 6 Spectral Sensitivity 100 1.6 Ta = 25˚C Ev = 1 000 lx 80 1.2 Relative sensitivity (%) Collector current Ic (mA) 1.4 750 lx 1 0.8 500 lx 0.6 0.4 250 lx 0.2 100 lx 60 40 20 0 0 5 10 15 20 25 30 0 400 35 500 600 700 800 900 1000 Wavelength λ (nm) Collector-emitter voltage V CE (V) Fig. 7 Response Time vs. Load Resistance Test Circuit for Response Time 100 Response time t r,tf (µ s) 50 VCE = 2V Ic = 2mA Ta = 25˚C Output Input 20 tr tf 10 Vcc 90% RL Output 10% 5 t f tr tr 2 1 0.1 0.2 0.5 1 2 Load resistance RL (k Ω) 5 10 tf 1100 PT4120 Fig. 10 Relative Output vs. Distance (Detector : GL4100) 100 2 Ta =25˚C 1.8 1.6 10 Relative output (%) IC=0.4mA IC=0.6mA 1.0 0.8 IC =0.2mA 1.2 IC =0.1mA 1.4 IC =0.05mA Collector-emitter saturation voltage VCE(sat)(V) Fig. 9 Collector-emitter Saturation Voltage vs. Irradiance 0.6 1 0.1 0.4 0.2 0 10 100 1000 Irradiance E e (mW/cm2) ● Please refer to the chapter "Precautions for Use". (Page 78 to 93) 0.01 0.1 1 10 100 Distance between emitter and detector d (mm)