PT481/PT481F/PT483F1 PT481/PT481F/ PT483F1 Narrow Acceptance High Sensitivity Phototransistor ■ Features ■ Outline Dimensions 2.95±0.2 2.15± 0.2 PT481F 2.54 0.8MAX. 0.8MAX. 4.0 R0.5 60˚ 0.5MIN. 17.5 +1.5 -1.0 1.7 Mark (black) 2 - 0.45 2 - 0.8 2 - 0.4 1.6 2 2.8 1. VCRs, cassette tape recorders 2. Floppy disk drives 3. Optoelectronic switches 4. Automatic stroboscopes Epoxy resin ❈ 0.15 R0.8± 0.1 ■ Applications 1.5 3.0 Detector center 1.15 0.75 0.3MAX. 2 - C0.5 ( Unit : mm ) 1 1 Emitter 2 Collector 2 ❈ Epoxy resin PT481 1.4 PT481/PT481F Rest of gate 1. Epoxy resin package 2. Narrow acceptance ( ∆ θ : Typ. ± 13˚ ) 3. High sensitivity ( IC : MIN. 1.5mA at E e = 0.1mW/cm 2 ) : PT481/PT483F1 ( IC : MIN. 0.9mA at E e = 0.1mW/cm 2 ) : PT481F 4. Visible light cut-off type : PT481F/PT483F1 5. Long lead pin type : PT483F1 1 Light blue transparent resin Visible light cut-off resin ( black ) PT481F Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 50 75 - 25 to +85 - 40 to +85 260 *1 For 3 seconds at the position of 1.4mm from the bottom face of resin package Unit V V mA mW ˚C ˚C ˚C 0.15 60˚ 1.4 R0.5 4.0 2.54 0.5MIN. Parameter Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature 2.95± 0.2 2.15± 0.2 2 - 0.6 ( Ta = 25˚C ) Epoxy resin ❈ 3.0 1.7 Mark (black) 0.8MAX. 18.5 40.0 R0.8±0.1 ■ Absolute Maximum Ratings Detector center 1.15 0.75 0.8MAX. 3.0 0.3MAX. Rest of gate 2 - C0.5 1.5 PT483F1 2 - 0.4 2 - 0.45 2 - 0.8 1.6 2 2.8 1 2 1 Emitter 2 Collector 1 ❈ Visible light cut-off resin ( black ) “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” PT481/PT481F/PT483F1 ■ Electro-optical Characteristics ( Ta = 25˚C ) Parameter PT481 *2 Collector PT481F current PT483F1 Collector dark current Symbol *2 V CE(sat) Collector-emitter saturation voltage PT481 PT481F/PT483F1 Rise time Fall time Peak emission wavelength Response time IC I CEO λp tr tf Conditions V CE = 2V E e = 0.1mW/cm 2 V CE = 10V, E e = 0 I c = 2.5mA E e = 1mW/cm 2 VCE = 2V, I C = 10mA R L = 100Ω MIN. 1.5 0.9 1.5 - TYP. 10 - MAX. 25 27 4.0 10- 6 Unit mA mA mA A - 0.7 1.0 V - 800 860 80 70 - nm nm µs µs *2 E e : Irradiance by CIE standard light source A ( tungsten lamp ) Fig. 2 Collector Dark Current vs. Ambient Temperature 10 - 4 5 70 10 - 5 (A) 80 CEO 60 50 40 30 20 = 10V 10 - 6 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 10 0 - 25 0 25 50 75 85 Ambient temperature Ta ( ˚C ) 100 10 - 11 5 - 25 175 50 25 50 75 Ambient temperature T a ( ˚C ) 100 V CE = 2V T a = 25˚C V CE = 2V E e = 0.1mW/cm2 Collector current I C ( mA ) 150 125 100 75 50 - 25 0 Fig.4-a Collector Current vs. Irradiance (PT481 ) Fig. 3 Relative Collector Current vs. Ambient Temperature Relative collector current ( % ) V CE 5 Collector dark current I Collector power dissipation P C ( mW ) Fig. 1 Collector Power Dissipation vs. Ambient Temperature 20 10 5 2 0 25 50 75 Ambient temperature Ta ( ˚C ) 100 1 2 5 10 - 1 2 Irradiance E e ( mW/cm2 ) 5 1 PT481/PT481F/PT483F1 Fig.4-b Collector Current vs. Irradiance ( PT481F/PT483F1 ) 25 V CE = 2V T a = 25˚C 20 10 5 2 5 10 -1 2 Irradiance E e ( mW/cm2 ) 0.15m 15 2 0.1mW/cm 10 2 0.08mW/cm 2 0.06mW/cm 0 1 2 3 4 5 Collector- emitter voltage VCE ( V ) 6 100 T a = 25˚C T a = 25˚C 2 14 0.04mW/cm2 0.02mW/cm2 Fig. 6 Spectral Sensitivity 16 /cm mW 12 E 10 = e 80 0.2 Relative sensitivity ( % ) Collector current I C ( mA ) 2 W/cm 0 1 5 Fig.5-b Collector Current vs. Collector-emitter Voltage ( PT481F/PT483F1 ) 2 cm W/ 5m 0.1 8 P C ( MAX. ) 2 m .1mW/c 0 m2 0.08mW/c m2 0.06mW/c 2 0.04mW/cm 6 4 2 0 Ee = 20 0.2mW/cm2 5 2 1 P C ( MAX. ) T a = 25˚C Collector current I C ( mA ) Collector current I C ( mA ) 50 Fig.5-a Collector Current vs. Collector-emitter Voltage (PT481 ) 60 PT481 PT481F PT483F1 40 20 0.02mW/cm2 0 2 4 6 8 10 12 14 Collector-emitter voltage V CE ( V ) 16 Fig. 7 Response Time vs. Load Resistance 0 400 500 600 700 800 900 Wavelength λ ( nm ) 1000 1100 Test Circuit for Response Time 1000 Response time ( µ s ) V CE = 2V IC = 10mA T a = 25˚C Output Input tr 100 tf VCC Output td td 10 ts 1 10 100 1000 Load resistance R L ( Ω ) 90% RL ts tr 5000 10% tf PT481/PT481F/PT483F1 Fig. 8 Sensitivity Diagram Fig.9-a Collector-emitter Saturation (PT481 ) Voltage vs. Irradiance ( Ta = 25˚C ) ( Ta = 25˚C ) - 20˚ - 10˚ 0˚ + 10˚ + 20˚ 2.0 - 50˚ - 60˚ 60 + 40˚ 40 + 50˚ + 60˚ 20 - 70˚ + 70˚ - 90˚ 2.0 0.6 0.003 20mA 7mA 10mA 1mA 0.01 0.02 0.05 0.1 0.2 Irradiance E e ( mW/cm2 ) 0.5 Fig.10 Relative Output vs. Distance ( Emitter : GL480 ) ( PT481F/PT483F1 ) 100 Relative output ( % ) 20mA 10mA 5mA 2mA 1mA IC = 0.5mA Collector-emitter saturation voltage V CE(sat) ( V ) 1.0 50 1.8 1.2 1.0 0.6 0.005 0.01 0.02 0.05 0.1 0.2 Irradiance E e ( mW/ cm2 ) 20 10 5 2 1 0.8 ● 1.2 0.8 + 90˚ 0 Angular displacement θ Fig.9-b Collector-emitter Saturation Voltage vs. Irradiance (PT481F/PT483F1 ) ( Ta = 25˚C ) 1.4 1.4 + 80˚ - 80˚ 1.6 1.6 IC = 0.5mA - 40˚ 1.8 Collector-emitter saturation voltage V CE(sat) ( V ) Relative sensitivity ( % ) 80 5mA + 30˚ - 30˚ 2mA 100 0.5 0.5 1 Please refer to the chapter “ Precautions for Use.” 0.2 0.5 2 5 20 50 1 10 Distance between emitter and detector d ( mm )