SHINDENGEN D1NS4

SHINDENGEN
Schottky Rectifiers (SBD)
Single
OUTLINE DIMENSIONS
D1NS4
Case : AX057
Unit : mm
40V 1A
FEATURES
● Tj150℃
● PRRSM avalanche
guaranteed
● 5 mm pitch mounting applicable
APPLICATION
● Switching power supply
● DC/DC converter
● Home Appliances, Office
● Telecommunication
Equipment
*Taping Code No.4000:20MIN
No.4060:27MIN
No.4070:15MIN
RATINGS
●Absolute Maximum Ratings (If not specified Tl=25℃)
Item
Symbol
Conditions
Ratings
Storage Temperature
Tstg
-55∼150
Operating Junction Temperature
Tj
150
VRM
Maximum Reverse Voltage
40
Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40
45
Average Rectified Forward Current
IO
50Hz sine wave, Ta=59℃
1
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125 ℃
Peak Surge Forward Current
30
Repetitive Peak Surge Reverse Power
PRRSM Pulse width 10μs, Tj=25℃
60
●Electrical Characteristics (If not specified Tl=25℃)
Item
Symbol
Conditions
VF
I F=1A,
Pulse measurement
Forward Voltage
Reverse Current
IR
VR =40V, Pulse measurement
Junction Capacitance
Cj
f=1MHz, VR =10V
Thermal Resistance
θjl junction to lead
θja junction to ambient, On P.C.B.
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
Max.0.55
Max.0.8
Typ.50
Max.10
Max.113
Unit
℃
℃
V
V
A
A
W
Unit
V
mA
pF
℃/W
D1NS4
Forward Voltage
Forward Current IF [A]
10
1
Tl=150°C [MAX]
Tl=150°C [TYP]
Tl=25°C [MAX]
Tl=25°C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
10
0.1
100
10
Junction Capacitance
Reverse Voltage VR [V]
1
D1NS4
f=1MHz
Tl=25°C
TYP
per diode
D1NS4
Reverse Current
1000
100
Tl=150°C [MAX]
Reverse Current IR [mA]
Tl=150°C [TYP]
10
Tl=125°C [TYP]
Tl=100°C [TYP]
1
Tl=75°C [TYP]
0.1
Pulse measurement per diode
0.01
0
10
20
30
40
Reverse Voltage VR [V]
50
60
D1NS4
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
2
DC
D=0.05
0.1
1.5
0.2
0.3
1
0.5
0.5
SIN
0.8
0
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
D1NS4
Forward Power Dissipation
1
Forward Power Dissipation PF [W]
DC
D=0.8
0.8
0.5
0.3
SIN
0.2
0.6
0.1
0.05
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
D1NS4
Derating Curve
Average Rectified Forward Current IO [A]
2
l
DC
1.5
l = 24mm
D=0.8
PCB
0.5
SIN
1
0.3
0.2
0.1
0.5
0.05
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta [°C]
VR = 20V
IO
0
0
VR
tp
D=tp /T
T
D1NS4
Peak Surge Forward Capability
IFSM
50
10ms 10ms
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
Peak Surge Forward Current IFSM [A]
40
30
20
10
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP