SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS DE3S4M Case : E-pack Unit : mm 40V 3A FEATURES ● SMT ● Tj150℃ ● PRRSM avalanche guaranteed ● High current capacity with Small Package APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tｃ=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=40℃ On alumina substrate 50Hz sine wave, R-load Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM PRRSM Tc=121℃ 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Pulse width 10μs, Tj=25℃ ●Electrical Characteristics (If not specified Tｃ=25℃) Item Symbol Conditions Forward Voltage VF IF=3A, Pulse measurement Reverse Current IR VR=VRM , Pulse measurement Junction Capacitance f=1MHz, VR=10V Cj Thermal Resistance θjc junction to case θja junction to ambient Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -40∼150 150 40 45 2.6 3 70 330 Unit ℃ ℃ V V A Ratings Max.0.55 Max.2.5 Typ.150 Max.12 Max.55 Unit V mA pF ℃/W A W DE3S4M Forward Voltage Forward Current IF [A] 10 1 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 DE3S4M Reverse Current 1000 Tc=150°C [MAX] 100 Reverse Current IR [mA] Tc=150°C [TYP] 10 Tc=125°C [TYP] Tc=100°C [TYP] 1 Tc=75°C [TYP] 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 DE3S4M Reverse Power Dissipation Reverse Power Dissipation PR [W] 6 5 DC D=0.05 0.1 4 0.2 0.3 3 0.5 2 SIN 1 0 0.8 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T DE3S4M Forward Power Dissipation 3 Forward Power Dissipation PF [W] DC D=0.8 2.5 SIN 0.5 0.3 2 0.2 0.05 1.5 0.1 1 0.5 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T DE3S4M Derating Curve Average Rectified Forward Current IO [A] 6 DC 5 D=0.8 4 0.5 SIN 3 0.3 0.2 2 0.1 0.05 1 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 20V IO 0 0 VR tp D=tp /T T DE3S4M Derating Curve 6 Average Rectified Forward Current IO [A] Alumina substrate Alumina base 5 Soldering land (leads) 1.5mm × 2.5mm Soldering land (heatsink) 7mmφ Conductor layer 20µm Substrate thickness 0.64mm DC 4 D=0.8 3 0.5 SIN 0.3 2 0.2 0.1 0.05 1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 20V IO 0 0 VR tp D=tp /T T DE3S4M Peak Surge Forward Capability IFSM 100 10ms 10ms 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied Peak Surge Forward Current IFSM [A] 80 60 40 20 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP