SHINDENGEN S30VT80

SHINDENGEN
3 Phase Bridge Diode
Diode Module
OUTLINE DIMENSIONS
S30VT80
CaseCase
: 2F: SVT
(Unit : mm)
800V 30A
FEATURES
●Dual In-Line Package
●Compact 3 phase bridge
●High IFSM
●Applicable to mount on glass-epoxy substrate
(VTA type)
APPLICATION
●Big Power Supply
●Air conditioner
●Factory Automation, Inverter
RATINGS
● Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Average Rectified Forward Current
50Hz sine wave, R-load, With heatsink, Tc=121℃
IO
Peak Surge Forward Current
Current Squared Time
Dielectric Strength
Mounting Torque
IFSM
50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode, Tj=25℃
2
I t 1ms≦t<10ms Tc=25℃
Vdis Terminals to case, AC 1 minute
TOR (Recommended torque : 0.6N・m)
● Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
Forward Voltage
VF IF=10A, Pulse measurement, Rating of per diode
Reverse Current
Thermal Resistance
IR
θjc
VR=VRM,
Pulse measurement, Rating of per diode
junction to case Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-40~150
150
800
30
Unit
℃
℃
V
A
400
A
800
2
0.8
A2s
kV
N・m
Ratings
Max.1.05
Unit
V
Max.10
μA
Max.0.5
℃/W
S30VTx
Forward Voltage
100
Forward Current IF [A]
10
Tc=150°C [TYP]
Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0.4
0.5
0.6
0.7
0.8
0.9
Forward Voltage VF [V]
1
1.1
1.2
S30VTx
Forward Power Dissipation
Forward Power Dissipation PF [W]
160
120
SIN
80
40
0
0
8
16
24
32
40
48
Average Rectified Forward Current IO [A]
Tj= 150°C
Sine wave
56
S30VTx
Derating Curve
Average Rectified Forward Current IO [A]
70
+
60
-
Heatsink
Tc
50
SIN
40
30
20
10
0
0
20
40
60
80
100
120
Case Temperature Tc [°C]
Sine wave
R-load
with heatsink
140
160
S30VTx
IFSM
Peak Surge Forward Capability
400
10ms 10ms
Peak Surge Forward Current IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
300
200
100
0
1
2
5
10
20
Number of Cycles [cycles]
50
100