CXK5B81020J/TM -12 131072-word × 8-bit High Speed Bi-CMOS Static RAM For the availability of this product, please contact the sales office. Description CXK5B81020J/TM is a high speed 1M bit Bi-CMOS static RAM organized as 131072 words by 8 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed and low power applications. CXK5B81020J 32 pin SOJ (PIastic) Features • Single 3.3V power supply: 3.3V ± 0.3V • Fast access time 12ns (Max.) • Low standby current: 10mA (Max.) • Low power operation 864mW (Max.) • Package line-up Dual Vcc/Vss CXK5B81020J 400mil 32pin SOJ package CXK5B81020TM 400mil 32pin TSOP package Block Diagram Function 131072 word × 8-bit static RAM Structure Silicon gate Bi-CMOS IC Pin Configuration (Top View) Pin Description A15 A16 A9 Vcc A8 A13 Buffer Row Decoder Memory Matrix 256 × 4096 A3 1 32 A4 A2 2 31 A5 A1 3 30 A6 A0 4 29 A7 5 28 OE CE A14 GND A11 A10 A12 A5 A4 A3 A0 CXK5B81020TM 32 pin TSOP (PIastic) Buffer I/O Gate Column Decoder A2 A1 I/O1 6 I/O2 7 26 I/O7 Vcc 25 GND 8 27 I/O8 Symbol Description A0 to A16 Address input I/O1 to I/O8 Data input CE Chip enable input WE Write enable input OE Output enable input VCC +3.3V power supply GND 9 24 Vcc I/O3 1 23 I/O6 I/O4 11 0 22 I/O5 WE 12 2 A8 1 20 A9 GND Ground A16 13 A15 14 19 A10 NC No connection A14 15 18 A11 A13 16 17 A12 A6 A7 WE OE I/O Buffer CE I/O1 I/O8 Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E93707B58-PP CXK5B81020J/TM Absolute Maximum Ratings (Ta = 25°C, GND = 0V) Item Symbol Rating –0.5∗1 to +4.6 Unit Supply voltage VCC Input voltage VIN Input and output voltage VI/O –0.5∗1 to VCC + 0.5 –0.5∗1 to VCC + 0.5 Allowable power dissipaiton PD 1.5∗2 W Operating temperature Topr 0 to +70 °C Storage temperature Tstg –55 to +150 °C 260 • 10 °C • sec 235 • 10 TM ∗1 Vcc, VIN, VI/O = –2.0V Min. for pulse width less than 5ns. ∗2 Air flow ≥ 1m/s. °C • sec Soldering temperature • time Tsolder J Truth Table CE OE WE Mode I/O1 to I/O8 Current H × × Not selected High Z ISB1, ISB2 L L H Read Data out ICC L × L Write Data in ICC L H H Output disable High Z ICC ×: "H" or "L" Recommended Operating Conditions Item Symbol (Ta = 0 to +70°C, GND = 0V) Min. Typ. Max. Unit Supply voltage VCC 3.0 3.3 3.6 V Input high voltage VIH 2.0 — VCC + 0.3 V Input low voltage VIL –0.3∗ — 0.8 V ∗ VIL = –2.0V Min. for pulse width less than 5ns. –2– V V V CXK5B81020J/TM Electrical Characteristics DC Characteristics (Vcc = 3.3V ± 0.3V, GND = 0V, Ta = 0 to +70°C) Conditions Min. Typ.∗ Max Unit ILI VIN = GND to VCC –10 — +10 µA ILO CE = VIH or OE = VIH or WE = VIL VI/O = GND to VCC –10 — +10 µA ICC Cycle: Min. Duty = 100% IOUT = 0mA CE = VIL VIN = VIH or VIL — — 240 mA ISB1 CE ≥ VCC – 0.2V VIN ≥ VCC – 0.2V or VIN ≤ 0.2V — — 10 mA ISB2 Cycle: Min. Duty = 100% CE = VIH VIN = VIH or VIL — — 100 mA Output high voltage VOH IOH = –2.0mA 2.4 — — V Output low voltage VOL IOL = 2.0mA — — 0.4 V Item Input leakage current Output leakage current Average operating current Symbol Standby current ∗ Vcc = 3.3V, Ta = 25°C I/O Capacitance Item (Ta = 25°C, f = 1MHz) Symbol Conditions Min. Typ. Max Unit Input capacitance CIN VIN = 0V — — 5 pF I/O capacitance CI/O VI/O = 0V — — 7 pF Note) This parameter is sampled and is not 100% tested. AC Characteristics • AC test condition (Vcc = 3.3V ± 0.3V, Ta = 0 to +75°C) Item Condition Input pulse high level VIH = 3.0V Input pulse low level VIL = 0.0V Input rise time Input fall time tr = 2ns tf = 2ns Input and output reference level 1.4V Output load conditions Fig. 1 Output load (1) I/O Output Load (2)∗1 3.3V Zo = 50Ω RL = 50Ω VL = 1.4V I/O 5pF∗2 ∗1. tLZ, tOLZ, tHZ, tOHZ, tOW, tWHZ ∗2. Including scope and jig capacitances Fig. 1 –3– 1179Ω 868Ω CXK5B81020J/TM • Read cycle Item Symbol -12 Unit Min. Max. Read cycle time tRC 12 — ns Address access time tAA — 12 ns Chip enable access time tCO — 12 ns Output enable to output valid tOE — 6 ns Output data hold time tOH 3 — ns Chip enable to output in low Z (CE) tLZ 3 — ns Output enable to output in low Z (OE) tOLZ∗ 0 — ns Chip disable to output in high Z (CE) tHZ∗ 0 6 ns Output disable to output in high Z (OE) tOHZ∗ 0 6 ns ∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2). This parameter is sampled and is not 100% tested. • Write cycle Item Symbol -12 Unit Min. Max. Write cycle time tWC 12 — ns Address valid to end of write tAW 10 — ns Chip enable to end of write tCW 10 — ns Data valid to end of write tDW 8 — ns Data hold from end of write tDH 0 — ns Write pulse width tWP 10 — ns Address set up time tAS 0 — ns Write recovery time tWR 0 — ns Output active from lend of write tOW∗ 4 — ns Write to output in high Z tWHZ∗ 0 6 ns ∗ Transition is measured ±200mV from steady voltage with specified loading in Fig. 1 1-(2). This parameter is sampled and is not 100% tested. –4– CXK5B81020J/TM Timing Waveform • Read cycle (1) : OE=VIL, WE=VIH tRC Address tAA tOH Data out Previous data valid Data valid • Read cycle (2) : WE=VIH tRC Address tAA tCO CE tLZ tHZ OE tO E tOLZ tOHZ Data valid Data out High impedance –5– CXK5B81020J/TM • Write cycle (1) : WE control tWC Address tWR tA W tCW CE tAS tWP WE tDW Data in tDH Data valid tWHZ tOW Data out High impedance • Write cycle (2) : CE control tWC Address tWR tA W tAS CE tCW tWP WE Data in tD tD W H Data valid tLZ tWHZ Data out High impedance ∗ Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition. –6– CXK5B81020J/TM Example of Representative Characteristics Supply current vs. Supply voltage Supply current vs. Ambient temperature 1.4 ICC — Supply current [Normalized] ICC — Supply current [Normalized] 1.4 1.2 1.0 0.8 Ta = 25°C 0.6 3.0 1.2 1.0 0.8 VCC = 3.3V 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 Supply current vs. Frequency 1.8 tAA, tCO, tOE — Access time [Normalized] ICC — Supply current [Normalized] 80 Access time vs. Load capacitance 12ns 1.0 0.75 0.5 0.25 tOE 1.6 1.4 tCO, tAA 1.2 Ta = 25°C VCC = 3.3V 1.0 0 0 25 50 75 Frequency (1/tRC, 1/tWC) [MHz] 0 100 Access time vs. Supply voltage tOE tAA, tCO tAA 1.0 tCO tOE 0.8 Ta = 25°C 0.6 3.0 160 1.4 tAA, tCO, tOE — Access time [Normalized] 1.2 40 80 120 CL — Load capacitance [pF] Access time vs. Load capacitance 1.4 tAA, tCO, tOE — Access time [Normalized] 20 40 60 Ta — Ambient temperature [°C] 1.2 tCO, tOE 1.0 tCO tAA tAA tOE 0.8 VCC = 3.3V 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 –7– 20 40 60 Ta — Ambient temperature [°C] 80 CXK5B81020J/TM Standby current vs. Supply voltage Standby current vs. Ambient temperature 1.4 ISB2 1.2 ISB1 1.0 0.8 Ta = 25°C 0.6 3.0 ISB1 — Standby current [Normalized] ISB1, ISB2 — Standby current [Normalized] 1.4 1.2 1.0 0.8 VCC = 3.3V 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 3.6 0 Input voltage level vs. Supply voltage ISB2 — Standby current [Normalized] VIL, VIH — Input voltage [Normalized] 1.4 1.1 VIH VIL 1.0 0.9 Ta = 25°C 1.0 0.8 VCC = 3.3V 3.6 0 Output high current vs. Output high voltage 20 40 60 Ta — Ambient temperature [°C] 80 Output low current vs. Output low voltage 1.8 IOL — Output low current [Normalized] IOH — Output high current [Normalized] 1.2 0.6 3.15 3.3 3.45 VCC — Supply voltage [V] 4.0 3.0 2.0 1.0 VCC = 3.3V 0.0 0.0 80 Standby current vs. Ambient temperature 1.2 0.8 3.0 20 40 60 Ta — Ambient temperature [°C] 1.4 1.0 0.6 VCC = 3.3V 0.2 1.0 2.0 3.0 VOH — Output high voltage [V] 4.0 0 –8– 0.2 0.4 0.6 VOL — Output low voltage [V] 0.8 CXK5B81020J/TM Package Outline Unit: mm CXK5B81020J 32PIN SOJ (PLASTIC) 400mil + 0.4 20.96 – 0.12 9.33 ± 0.18 + 0.1 0.2 – 0.05 11.05 ± 0.12 17 + 0.3 10.16 – 0.12 32 4 25 0. R 1 16 1.27 0.73 ± 0.08 + 0.2 2.2 – 0.11 φ0.178 M 0.95 3.5 ± 0.25 0.43 ± 0.1 0.635 MIN 0.1 PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY RESIN SONY CODE SOJ-32P-01 LEAD TREATMENT SOLDER PLATING EIAJ CODE ∗SOJ032-P-0400-A LEAD MATERIAL 42 / COPPER ALLOY PACKAGE WEIGHT 1.3g JEDEC CODE CXK5B81020TM 32PIN TSOP (II) (PLASTIC) 400mil 1.27 MAX ∗20.95 ± 0.1 32 0.1 1 11.76 ± 0.2 ∗10.16 ± 0.1 17 A 16 1.27 0.4 ± 0.1 + 0.05 0.127 – 0.02 0.21 M 0.5 ± 0.1 0.1 ± 0.1 0° to 10° NOTE: Dimension “∗” does not include mold protrusion. DETAIL A PACKAGE STRUCTURE PACKAGE MATERIAL EPOXY / PHENOL RESIN SONY CODE TSOP (II) -32P-L01 LEAD TREATMENT SOLDER PLATING EIAJ CODE TSOP (II) 032-P-0400-A LEAD MATERIAL 42 ALLOY JEDEC CODE PACKAGE WEIGHT –9–