SLD233VL Index-Guided High Power AlGaAs Laser Diode Description The SLD233VL is a high power index-guided AlGaAs laser diode. M-274 Features • Low noise • Low power consumption Applications Pickups for MiniDisc recording/playback Structure • AlGaAs quantum well-structure laser diode • PIN photodiode for optical power output monitor Recommended Operating Optical Power Output 30mW Absolute Maximum Ratings (Tc = 25°C) • Optical power output PO 35 mW • Reverse voltage VR LD 2 V PD 15 V • Operating temperature Topr –10 to +60 °C • Storage temperature Tstg –40 to +85 °C Pin Configuration Connection Diagram 3 COMMON PD LD 2 2 1 1 3 1. LD ANODE 2. PD ANODE 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97940-PS SLD233VL Optical and Electrical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 30 40 mA Threshold current Ith Operating current Iop PO = 35mW 70 85 mA Operating voltage Vop PO = 35mW 2.0 2.5 V Oscillation wavelength λ PO = 35mW 780 790 800 nm 26 28.5 32 degree 7.4 8.5 10.0 degree ±80 µm ±3 degree ±2 degree 1.2 mW/mA Radiation angle Positional accuracy Perpendicular θ⊥ Parallel θ// Position ∆X, ∆Y, ∆Z Angle ∆φ⊥ PO = 35mW PO = 35mW ∆φ// Differential efficiency ηD Astigmatism As Coherence γ PO = 30mW 0.55 0.9 –16 PO = 4mW –2– 0.7 µm 0.9 SLD233VL Package Outline Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90° 3 2 1 0 φ5.6 – 0.025 φ4.4 MAX φ3.7 MAX φ1.0 MIN 1.2 ± 0.1 Reference Plane LD Chip & Photo Diode ∗Optical Distance = 1.35 ± 0.08 6.5 2 3 1 3 – φ0.45 SONY CODE 2.6 MAX 0.5 MIN ∗1.26 0.25 Window Glass PCD φ2.0 M-274 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –3– 0.3g