SLD1133VS 650nm Index-Guided Red Laser Diode Description The SLD1133VS is an index-guided red laser diode for BCS. The wavelength is 20nm shorter than that of the current diodes. M-274 Features • Small astigmatism (7µm typ.) • Low operating current (60mA typ.) • Small package (φ5.6mm) • Single longitudinal mode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 7 mW • Reverse voltage VR LD 2 V PD 15 V • Operating temperature Topr –10 to +70 °C • Storage temperature Tstg –40 to +85 °C Applications Bar code scanner Structure • AlGaInP MQW laser diode • PIN photodiode to monitor laser beam output Recommend Optical Power Output 5mW Connection Diagram Pin Configuration Common 3 2 LD PD 2 1 1 3 1. LD cathode 2. PD anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E96Z19C98-PS SLD1133VS Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 50 65 mA Threshold current Ith Operating current Iop Po = 5mW 60 70 mA Operating voltage Vop Po = 5mW 2.3 2.8 V Wavelength λp Po = 5mW 650 660 nm 24 30 40 degree 6 8 12 degree ±80 µm ±3 degree ±3 degree Radiation angle Positional accuracy Perpendicular θ⊥ Parallel θ// Position ∆X, ∆Y, ∆Z Angle ∆φ// Po = 5mW Po = 5mW ∆φ⊥ Differential efficiency ηD Po = 5mW 0.15 0.4 0.7 mW/mA Astigmatism As Po = 5mW 0 7 15 µm Monitor current Imon Po = 5mW, VR = 5V 0.05 0.1 0.3 mA Handling Precautions (1) Eye protection against laser beams The optical output of laser diodes ranges from several mW to 4W. However the optical power density of the laser beam at the diode chip reaches 1MW/cm2. Unlike gas lasers, since laser diode beams are divergent, uncollimated laser diode beams are fairly safe at a laser diode. For observing laser beams, ALWAYS use safety goggles that block infrared rays. Usage of IR scopes, IR cameras and fluorescent plates is also recommended for monitoring laser beams safely. Safety goggles for protection from laser beam Laser diode Lens Optical material IR fluorescent plate Optical board Optical power output control device Temperature control device (2) Prevention of surge current and electrostatic discharge Laser diode is most sensitive to electrostatic discharge among semiconductors. When a large current is passed through the laser diode even for an extremely short time (in the order of nanosecond), the strong light emitted from the laser diode promotes deterioration and then laser diodes are destroyed. Therefore, note that the surge current should not flow the laser diode driving circuit from switches and others. Also, if the laser diode is handled carelessly, it may be destructed instantly because electrostatic discharge is easily applied by a human body. Be great careful about excess current and electrostatic discharge. –2– SLD1133VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics TC = 0°C 25°C 50°C 70°C Far field pattern (FFP) TC = 0°C 25°C 50°C 70°C 7 Po = 5mW Tc = 25°C Relative radiant intensity Po – Optical output [mW] 6 5 Imon 4 3 2 θ⊥ θ// 1 0 20 0 40 60 80 100 –60 –40 IF – Forward current [mA] 0 0.2 Imon – Monitor current [mA] Threshold current vs. Temperature characteristics –20 0 20 Angle [degree] 40 60 Monitor current vs. Temperature characteristics 0.2 200 100 10 –20 lmon-Monitor current [mA] Ith – Threshold current [mA] PO = 5mW 0 20 40 60 Tc – Case temperature [°C] 0.1 0 –20 80 –3– 0 20 40 60 Tc – Case temperature [°C] 80 SLD1133VS Temperature dependence of spectrum Po = 5mW Tc = 70°C Relative radiant intensity Tc = 50°C Tc = 25°C Tc = 0°C 645 650 655 λ – Wavelength [nm] –4– 660 665 SLD1133VS Power output dependence of spectrum Tc = 25°C Po = 7mW Relative radiant intensity Po = 5mW Po = 3mW Po = 1mW 645 650 655 λ – Wavelength [nm] –5– 660 665 SLD1133VS Package Outline Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90° 3 1 2 0 φ5.6 – 0.025 φ4.4 MAX φ3.7 MAX φ1.0 MIN 1.2 ± 0.1 Reference Plane 2 3 1 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX 0.5 MIN ∗1.26 0.25 Window Glass PCD φ2.0 M-274 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –6– 0.3g