STMICROELECTRONICS 74VHC132M

74VHC132

QUAD 2-INPUT SCHMITT NAND GATE
PRELIMINARY DATA
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HIGH SPEED: tPD = 4.9 ns (TYP.) at VCC = 5V
LOW POWER DISSIPATION:
ICC = 2 µA (MAX.) at TA = 25 oC
TYPICAL HYSTERESIS: Vh = 1V at VCC = 4.5V
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8 mA (MIN)
BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
OPERATING VOLTAGE RANGE:
VCC (OPR) = 2V to 5.5V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 132
IMPROVED LATCH-UP IMMUNITY
LOW NOISE: VOLP = 0.8V (Max.)
DESCRIPTION
The 74VHC132 is an advanced high-speed
CMOS QUAD 2-INPUT SCHMITT NAND GATE
fabricated with sub-micron silicon gate and
double-layer metal wiring C2MOS technology.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
M
(Micro Package)
T
(TSSOP Package)
ORDER CODES :
74VHC132M
74VHC132T
regard to the supply voltage. This device can be
used to interface 5V to 3V.
Pin configuration and function are the same as
those of the VHC00 but the VHC132 has
hysteresis.
This together with its schmitt trigger function
allows it to be used on line receivers with slow
rise/fall input signals.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
PIN CONNECTION AND IEC LOGIC SYMBOLS
June 1999
1/7
74VHC132
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
SYMBOL
1, 4, 9, 12
1A to 4A
NAME AND FUNCT ION
Data Inputs
2, 5, 10, 13
1B to 4B
Data Inputs
3, 6, 8, 11
1Y to 4Y
Data Outputs
7
GND
Ground (0V)
14
VCC
Positive Supply Voltage
TRUTH TABLE
A
B
Y
L
L
H
L
H
H
H
L
H
H
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Supply Voltage
-0.5 to +7.0
V
VI
DC Input Voltage
-0.5 to +7.0
V
VO
DC Output Voltage
-0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
- 20
mA
IOK
DC Output Diode Current
± 20
mA
IO
DC Output Current
± 25
mA
± 50
mA
VCC
ICC or IGND DC VCC or Ground Current
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
300
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
2/7
Parameter
Supply Voltage
VI
Input Voltage
VO
Output Voltage
Top
Operating Temperature
Valu e
Unit
2.0 to 5.5
V
0 to 5.5
V
0 to VCC
-40 to +85
V
o
C
74VHC132
DC SPECIFICATIONS
Symb ol
Vt+
Vt-
Vh
Parameter
T est Cond ition s
VOL
II
ICC
Un it
-40 to 85 o C
Min.
High Level Threshold
Voltage
3.0
2.2
2.2
4.5
3.15
3.15
5.5
3.85
Low Level Threshold
Voltage
3.0
0.9
0.9
4.5
1.35
1.35
5.5
1.65
1.65
Hysteresis Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage Current
Quiescent Supply
Current
Typ .
Max.
Min .
Max.
V
3.85
3.0
0.3
1.2
0.3
1.2
4.5
0.4
1.4
0.4
1.4
0.5
1.6
5.5
VOH
Value
T A = 25 o C
V CC
(V)
0.5
1.6
2.0
I O =-50 µA
1.9
2.0
1.9
3.0
IO=-50 µA
2.9
3.0
2.9
4.5
IO=-50 µA
4.4
4.5
4.4
3.0
IO=-4 mA
2.58
4.5
IO=-8 mA
3.94
2.0
0.0
0.1
0.1
3.0
I O=50 µA
IO=50 µA
0.0
0.1
0.1
4.5
IO=50 µA
0.0
0.1
0.1
0.44
V
V
V
2.48
3.8
V
3.0
IO=4 mA
0.36
4.5
IO=8 mA
0.36
0.44
0 to 5.5
VI = 5.5V or GND
±0.1
±1.0
µA
5.5
VI = VCC or GND
2
20
µA
AC ELECTRICAL CHARACTERISTICS (Input t r = tf =3 ns)
Symb ol
Parameter
V CC
(V)
tPLH
tPHL
Propagation Delay
Time
Test Co ndition
CL
(pF )
Value
T A = 25 o C
3.3(*)
15
Typ .
7.6
Max.
11.9
Min .
1.0
Max.
14.0
3.3
5.0(**)
(*)
50
15
10.1
4.9
15.4
7.7
1.0
1.0
17.5
9.0
(**)
50
6.4
9.7
1.0
11.0
5.0
Min.
Un it
-40 to 85 o C
ns
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5V ± 0.5V
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Value
T A = 25 o C
Min.
Un it
-40 to 85 o C
Typ .
Max.
C IN
Input Capacitance
4
10
CPD
Power Dissipation
Capacitance (note 1)
16
Min .
Max.
10
pF
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. (Referto
Test Circuit).Average operating current can be obtained by the following equation. ICC(opr) = CPD • VCC • fIN + ICC/4 (per Gate)
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74VHC132
DYNAMIC SWITCHING CHARACTERISTICS
Symb ol
Parameter
T est Cond ition s
Dynamic Low Voltage
Quiet Output (note 1, 2)
5.0
VIHD
Dynamic High Voltage
Input (note 1, 3)
5.0
VILD
Dynamic Low Voltage
Input (note 1, 3)
5.0
VOLP
VOLV
Value
T A = 25 o C
V CC
(V)
Min.
-0.8
C L = 50 pF
Un it
-40 to 85 o C
Typ .
Max.
0.3
0.8
Min .
Max.
-0.3
3.5
V
1.5
1) Worst case package.
2) Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n -1) outputs switching and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
TEST CIRCUIT
CL = 15/50 pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS (f=1MHz; 50% duty cycle)
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74VHC132
SO-14 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.003
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45 (typ.)
D
8.55
8.75
0.336
0.344
E
5.8
6.2
0.228
0.244
e
1.27
e3
0.050
7.62
0.300
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.68
0.026
8 (max.)
P013G
5/7
74VHC132
TSSOP14 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
A
MAX.
MIN.
MAX.
1.1
0.433
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
0.85
0.9
0.95
0.335
0.354
0.374
b
0.19
0.30
0.0075
0.0118
c
0.09
0.20
0.0035
0.0079
D
4.9
5
5.1
0.193
0.197
0.201
E
6.25
6.4
6.5
0.246
0.252
0.256
E1
4.3
4.4
4.48
0.169
0.173
0.176
e
0.65 BSC
0.0256 BSC
K
0o
4o
8o
0o
4o
8o
L
0.50
0.60
0.70
0.020
0.024
0.028
A
A2
A1
b
e
K
c
E1
PIN 1 IDENTIFICATION
1
L
E
D
6/7
TYP.
74VHC132
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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