NPN EPITAXIAL SILICON TRANSISTORS SOT— —23 High Voltage Transistor ! ! WMBT3904 Power Dissipation: 225mW Collector Current: Max. 0.2A 1. BASE 2. EMITTER 3. COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25℃ ℃) Limits Characteristic Symbol Test Conditions Units MIN. Collector-emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain MAX. BVCEO IC=1mA 40 V BVCBO IC=100µA 60 V BVEBO IE=10µA 6.0 V ICEX VCE=30V, VBE=3V hFE1 hFE2 hFE3 hFE4 hFE5 BVESAT1 BVESAT2 VCE(SAT)1 VCE(SAT)2 fT VCE=1V, IC=100µA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA,IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10, VCE=20V f=100MHz 50 40 70 100 60 30 650 nA 300 850 mV Base-Emitter Saturation Voltage 950 mV 200 mV Collector-Emitter Saturation Voltage 200 mV Transition Frequency 300 MHz Collector-Base COB VCB=5V, f=1MHz 4 PF Capacitance NOTES: Due to probe testing limitations, only the DC parameters are tested. Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]