S8550LT1 PNP EPITAXIAL SILICON TRANSISTORS HIGH VOLTAGE TRANSISTOR: (PNP) SOT— —23 FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW（Tamb=25℃） Collector current ICM : 0.5A Collector-base voltage V(BR)CBO : 40V 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（ （Tamb=25℃ ℃ unless otherwise specified） ） Parameter Collector-base Symbol breakdown voltage Test conditions MIN TYP MAX UNIT V(BR)CBO Ic= 100µA , IE=0 30 V V(BR)CEO Ic= 1 mA，IB=0 21 V V(BR)EBO IE= 100µA，IC=0 5.0 V ICBO VCB= 30V , IE=0 1.0 µA IEBO VEB= 5V，IC=0 100 nA HFE（1） VCE= 1V, IC= 150mA 120 HFE（2） VCE= 1V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50 mA 500 mV Base-emitter saturation VBE(sat) IC= 500mA, IB= 50 mA 1.2 V VBE(on) IC= 10mA, VCE =1V 1.0 V Collector-emitter breakdown Emitter-base breakdown Collector cut-off Emitter DC cut-off current voltage voltage current current 400 gain(note) voltage Base-emitter voltage CLASSIFICATION OF HFE(1) Rank B9C B9D B9E Range 120-200 160-300 280-400 Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected]