FAIRCHILD FDMC7672

FDMC7672
N-Channel Power Trench® MOSFET
30 V, 16.9 A, 5.7 m:
Features
General Description
„ Max rDS(on) = 5.7 m: at VGS = 10 V, ID = 16.9 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
„ Max rDS(on) = 7.0 m: at VGS = 4.5 V, ID = 15.0 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
Application
„ DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
Bottom
Top
Pin 1
S
S
S
G
D
D
D
D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
TA = 25 °C
-Continuous
Ratings
30
Units
V
±20
V
20
(Note 1a)
-Pulsed
16.9
A
50
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
TA = 25 °C
(Note 3)
144
(Note 1a)
2.3
mJ
W
-55 to +150
°C
53
°C/W
Thermal Characteristics
RTJA
Thermal Resistance, Junction to Ambient
(Note 1a)
Package Marking and Ordering Information
Device Marking
FDMC7672
Device
FDMC7672
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
Package
MLP 3.3x3.3
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
July 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 PA, VGS = 0 V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 PA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
30
V
13
VDS = 24 V, VGS = 0 V
mV/°C
1
TJ = 125 °C
250
VGS = 20 V, VDS = 0 V
PA
100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 PA, referenced to 25 °C
-6
VGS = 10 V, ID = 16.9 A
4.3
5.7
VGS = 4.5 V, ID = 15.0 A
5.4
7.0
VGS = 10 V, ID = 16.9 A
TJ = 125 °C
5.5
6.9
VDD = 5 V, ID = 16.9 A
82
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.2
1.9
mV/°C
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2925
3890
pF
1050
1400
pF
80
120
pF
:
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 16.9 A,
VGS = 10 V, RGEN = 6 :
13
24
ns
6
12
ns
31
49
ns
5
10
ns
Total Gate Charge
VGS = 0 V to 10 V
40
57
nC
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 16.9 A
18
24
nC
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
9
nC
4
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 16.9 A
(Note 2)
0.83
1.2
VGS = 0 V, IS = 1.9 A
(Note 2)
0.72
1.2
IF = 16.9 A, di/dt = 100 A/Ps
V
39
62
ns
18
32
nC
NOTES:
1. R TJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
a. 53 °C/W when mounted on
a 1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0 %.
3. EAS of 144 mJ is based on starting TJ = 25 oC, L = 1 mH, I AS = 17 A, V DD = 27 V, VGS = 10 V. 100% test at L = 3 mH, I AS = 7.9 A.
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
2
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
50
VGS = 6 V
40
VGS = 4.5 V
VGS = 4 V
30
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
20
VGS = 3.5 V
VGS = 3 V
10
0
0.0
0.5
1.0
4.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10 V
3.5
3.0
VGS = 4 V
2.5
2.0
VGS = 4.5 V
1.5
1.0
0
10
20
40
50
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
20
rDS(on), DRAIN TO
ID = 16.9 A
VGS = 10 V
1.2
1.0
0.8
0.6
-75
-50
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
ID = 16.9 A
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
15
10
TJ = 125 oC
5
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
50
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
40
ID, DRAIN CURRENT (A)
VGS = 10 V
VGS = 6 V
0.5
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
4.0
VDS = 5 V
30
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
1
2
3
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
4
TJ = 25 oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
3
1.2
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
5000
ID = 16.9 A
8
VDD = 10 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
4
Ciss
1000
Coss
2
100 f = 1 MHz
VGS = 0 V
0
0
9
18
27
36
45
Figure 7. Gate Charge Characteristics
10
30
Figure 8. Capacitance vs Drain
to Source Voltage
70
20
60
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
TJ = 25 oC
TJ =
TJ = 100 oC
125 oC
50
40
VGS = 10 V
30
VGS = 4.5 V
20
10
o
RTJC = 4.0 C/W
Limited by Package
1
0.01
0.1
1
10
0
25
100 200
P(PK), PEAK TRANSIENT POWER (W)
100 Ps
10
1 ms
0.1
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
RTJA = 125 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
125
150
2000
1000
VGS = 10 V
100
10
SINGLE PULSE
RTJA = 125 oC/W
1 TA = 25 oC
0.5
-4
-3
-2
10
10
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
100
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
70
THIS AREA IS
LIMITED BY rDS(on)
75
o
Figure 9. Unclamped Inductive
Switching Capability
1
50
Tc, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
50
0.1
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
o
0.001
0.0005
-4
10
RTJA = 125 C/W
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
5
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
3.30
0.10 C
A
B
2X
3.30
PIN#1 QUADRANT
0.10 C
TOP VIEW
2X
0.8 MAX
RECOMMENDED LAND PATTERN
0.10 C
(0.203)
0.08 C
0.05
0.00
SIDE VIEW
SEATING
PLANE
2.32
2.22
PIN #1 IDENT
1
0.785
4
(4X) 0.55
0.45
0.350
1.150
R0.150
2.05
1.95
0.299
8
5
0.65
0.40 (8X)
0.30
1.95
0.10
0.05
C A B
C
BOTTOM VIEW
A. DOES NOT CONFORM TO JEDEC
REGISTRATION MO-229
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M, 1994
D. DRAWING FILE NAME : MLP08XREVA
E. LAND PATTERN RECOMMENDATION IS
BASED ON FSC DESIGN ONLY
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
6
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I40
©2009 Fairchild Semiconductor Corporation
FDMC7672 Rev.B
7
www.fairchildsemi.com
FDMC7672 N-Channel Power Trench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
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GTO™
Current Transfer Logic™
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EfficentMax™
ISOPLANAR™
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TinyPWM™
Saving our world, 1mW /W /kW at a time™
EZSWITCH™ *
MegaBuck™
TinyWire™
™*
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TriFault Detect™
SMART START™
MicroFET™
TRUECURRENT™*
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SuperSOT™-3
Motion-SPM™
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